We studied the initial reaction mechanism of Zn precursors, namely, di-methylzinc (Zn(CH3)2, DMZ) and diethylzinc (Zn(C2H5)2, DEZ), for zinc oxide thin-film growth on a Si (001) surface using density functional theory. We calculated the migration and reaction energy barriers for DMZ and DEZ on a fully hydroxylized Si (001) surface. The Zn atom of DMZ or DEZ was adsorbed on an O atom of a hydroxyl (-OH) due to the lone pair electrons of the O atom on the Si (001) surface. The adsorbed DMZ or DEZ migrated to all available surface sites, and rotated on the O atom with low energy barriers in the range of 0.00-0.13 eV. We considered the DMZ or DEZ reaction at all available surface sites. The rotated and migrated DMZs reacted with the nearest -OH to produce a uni-methylzinc (-ZnCH3, UMZ) group and methane (CH4) with energy barriers in the range of 0.53-0.78 eV. In the case of the DEZs, smaller energy barriers in the range of 0.21-0.35 eV were needed for its reaction to produce a uni-ethylzinc (-ZnC2H5, UEZ) group and ethane (C2H6). Therefore, DEZ is preferred to DMZ due to its lower energy barrier for the surface reaction.

Adsorption of a water molecule on a Si (001) surface and its dissociation were studied using density functional theory to study the distribution of -OH fragments on the Si surface. The Si (001) surface was composed of Si dimers, which buckle in a zigzag pattern below the order-disorder transition temperature to reduce the surface energy. When a water molecule approached the Si surface, the O atom of the water molecule favored the down-buckled Si atom, and the H atom of the water molecule favored the up-buckled Si atom. This is explained by the attractions between the negatively charged O of the water and the positively charged down-buckled Si atom and between the positively charged H of the water and the negatively charged up-buckled Si atom. Following the adsorption of the first water molecule on the surface, a second water molecule adsorbed on either the inter-dimer or intra-dimer site of the Si dimer. The dipole-dipole interaction of the two adsorbed water molecules led to the formation of the water dimer, and the dissociation of the water molecules occurred easily below the order-disorder transition temperature. Therefore, the 1/2 monolayer of -OH on the water-terminated Si (001) surface shows a regular distribution. The results shed light on the atomic layer deposition process of alternate gate dielectric materials, such as HfO2.

Na+ ion conductivity can be improved by the substitution of an Mg atom for an Al atom to form a nonstoichiometric Na+ β-alumina. We performed a first principles study to investigate the most stable substitution site of an Mg atom and the resulting structural change of the nonstoichiometric Na+ β-alumina. Al atoms were classified as four different layers in the spinel block that are separated by conduction planes in the nonstoichiometric Na+ β-alumina. The substitution of an Mg atom for an Al atom at a tetragonal site was more favorable than that at an octahedral site. The substitution in the spinel block was more favorable than that close to the conduction plane. This result was well explained by the volume changes of the polyhedrons, by the standard deviation of the Mg-O distance, and by the comparison with bulk MgO structure. Our result indicates that the most preferable site for the Mg atom was the tetrahedral site at the spinel block in the nonstoichiometric Na+ β-alumina.

본 연구는 붉은꽃인동덩굴의 적심높이(60, 120, 180 cm) 가 가지길이, 측지수 및 피복에 미치는 적심높이별 영 향을 알아 보기 위하여 수행하였다. 인동덩굴의 줄기길 이는 고절위(180 cm) 적심이 저절위(60 cm) 적심보다 길 었고, 측지수는 저절위 적심이 고절위 적심보다 많았다. 그러나 분지수는 적심처리간에 큰 차이가 없었다. 퍼골라 벽면의 피복도는 저절위 적심이 85%, 중절위 적심이 74%, 고절위 적심이 62%를 보였다. 개화는 5월 중순부터 10월 중순까지 계속되었고, 첫 개화는 60 cm 적심이 5월 중순으로 가장 빨랐다. 대체로 적심 높이가 낮고 적심시기가 빠를수록 개화가 빨랐고, 개화최성기는 8월 중순이었다. 붉은꽃인동덩굴을 이용한 퍼골라 벽면의 가로 3.0 m ×높이 2.2 m 녹화를 하기 위해서는 퍼골 라당 6주(1m당 2주)를 재식하고, 60 cm 벽면 높이에서 1회 적심하면 당년에 85%의 벽면스크린 및 녹화가 가 능하였다.

Density functional theory was utilized to investigate the growth of an indium nanowire on a Si (001) buckled surface. A site between the edge of two Si dimers is most favorable when the first In atom is adsorbed on the surface at an adsorption energy level of 2.26 eV. The energy barriers for migration from other sites to the most favorable site are low. When the second In atom is adsorbed next to the first In atom to form an In dimer perpendicular to the Si dimer row, the adsorption energy is the highest among all adsorption sites. The third In atom prefers either of the sites next to the In dimer along the In dimer direction. The fourth In atom exhibited the same tendency showed by the second atom. The second and fourth In adsorption energy levels are higher than the first and third levels as the In atoms consume the third valence electron by forming In dimers. Therefore, the In nanowire grows perpendicular to the Si dimer row on the Si (001) surface, as it satisfies the bonding of the three valence electrons of the In atoms.

Calcia (CaO) stabilized cubic-HfO2 is studied by density functional theory (DFT) with generalized gradient approximation (GGA). When a Ca atom is substituted for a Hf atom, an oxygen vacancy is produced to satisfy the charge neutrality. The lattice parameter of a 2×2×2 cubic HfO2 supercell then increases by 0.02 Å. The oxygen atoms closest to the oxygen vacancy are attracted to the vacancy as the vacancy is positive compared to the oxygen ion. When the oxygen vacancy is located at the site closest to the Ca atom, the total energy of HfO2 reaches its minimum. The energy barriers for the migration of the oxygen vacancy were calculated. The energy barriers between the first and the second nearest sites, the second and the third nearest sites, and the third and fourth nearest sites are 0.2, 0.5, and 0.24 eV, respectively. The oxygen vacancies at the third and fourth nearest sites relative to the Ca atom represent the oxygen vacancies in undoped HfO2. Therefore, the energy barrier for oxygen migration in the HfO2 gate dielectric is 0.24 eV, which can explain the origin of gate dielectric leakage.

Tetragonal-Ni1-xPdxSi/Si (001) structure was studied by using density functional theory (DFT). An epitaxial interface between 2×2×4 (001) tetragonal-NiSi supercell and 1×1×2 (001) Si supercell was first constructed by adjusting the lattice parameters of B2-NiSi structure to match those of the Si structure. We chose Ni atoms as a terminating layer of the B2-NiSi; the equilibrium gap between the tetragonal-NiSi and Si was calculated to be 1.1 Å. The Ni atoms in the structure moved away from the original positions along the z-direction in a systematic way during the energy minimization. Two different Ni sites were identified at the interface and the bulk, respectively. The two Ni sites at the interface have 6 and 7 coordination numbers. The Ni sites with coordination number 6 at the interface were located farther away from the interface, and were more favorable for Pd substitution.

본 실험은 작물의 양』분 흡수율에 근거하여 배추과 엽채류 수경재배에 적합한 배양액을 개발하고자 수행되었다. 원예연구소 배양액(NSH액) 1배액을 기준으로 1/2배액, 1배액, 3/2배액으로 25일간 담액 수경재배 했을 때 청경채와 겨자채는 3/2배액, 케일은 1배액에서 생육이 좋았다. 작물의 양수분 흡수율을 산정하여 얻은 평균 양이온 비는 K 49.5%, Ca 35.8%, Mg 14.7% 였으며, 배추과 작물에 적합한 배양액 N 14, P 3, K 6.8, Ca 4.8, Mg 2m·L-1을 개발하였다 개발 배양액을 평가하기 위해 2003년 9월부터 2004년 10월까지 공시 작물을 4회 재배하였다. 개발 배양액에서 작물을 재배했을 때 빠른 상대생장률과 함께 생육이 1.1~2.5배, 비타민 C 함량은 1.06~l.52배 증가하였다. 개발 배양액에 적합한 작물로는 겨자채 'Asia curled', 'Asia redcurled' 및 'Pamagreen', 케일 'TBC', 'Portugal' 및 'Manchu collard', 잎브로콜리 'New green', 천경채, 방울다다기양배추 'Green king'와 'Red king', 홍채태, 쌈추 등으로 생육과 항산화 성분인 비타민 C함량 증가를 통해 기능성 엽채류 생산이 가능하였다.

The present study investigates the effects of teaching activity-based integrative reading and writing on the amelioration of written language in the elementary school classroom. This study was conducted during the first semester in 2003. The subjects were 160, 6th year elementary school students. They were divided into two groups, control and experimental. Both the control group and the experimental group were composed of 80 students each. Each group was divided into three levels: high, intermediate, and low, on the basis of a diagnostic evaluation. All the subjects of the experimental group were integratively taught reading and writing of the English alphabet, words, phrases, sentences, and context, according to their level. All the subjects of the control group were discretely taught reading and writing according to their curriculum and level. They were also given a questionnaire of affective and psychomotor domains. Statistical analyses were performed to determine: (a) the difference of the control and experimental groups, (b) the difference between the control and experimental groups, (c) the difference of their level (high, intermediate, and low) of the control and experimental groups on reading and writing in the pre- and post- achievement tests, and (d) the difference of the level of the control and experimental groups on the affective and psychomotor domains such as interest, self-confidence, understanding, participation, and motivation of reading and writing in the pre- and post- achievement tests. The results of this study reveal that significantly higher scores on the written language were obtained in the experimental group. The difference between the control group and the experimental group was not significant at the beginning of the term. However, the difference was significant at the end of the term. It was also found that in the experimental group, interest was improved at the intermediate level. Self-confidence and understanding were improved at the intermediate and low levels, and participation was improved at the low level. It is recommended that researchers and teachers develop integrative materials of reading and writing more widely according to the level.

참외재배시 저광도 조건시 상품수량의 급격한 저하를 막기 위하여 본 연구가 수행되었다. 과실 비대기에 해당되는 착과후 10일부터 400 μmol.m-2.S-1정도의 저광도 조건이 지속되면 광합성 속도도 떨어지고, 엽록소 함량도 낮았으며 특히 요소 무엽면시비구의 광합성속도는 크게 저하되었다 당도에 있어서는 자연광에 비해 저광도 처리구가 전반적으로 낮았는데, 착과수가 많고 무엽면시비구일수록 낮았다. 발효과 발생률은 요소 엽면시비 유무에 관계없이 자연광에서는 4% 미만으로 발생되었는데, 저광도 조건에서는 10% 이상 발생되었다. 특히 저광도 조건에서 적과수를 적게 한 처리구일수록 발효과 발생률이 높았는데, 적과를 하지 않은 처리구는 각각 39와 48%로 매우 높은 발생율을 보였다. 수확시기 지연은 요소 엽면시비 유무와 관계없이 자연광에 비해 저광도 조건에서 늦어지는 경향을 보였는데, 적과수가 적을수록 지연정도는 심했다 주당 상품수량에 있어서는 저광도 조건하에서 자연광에 비해 16∼34% 수준 정도로 매우 낮은 수량을 보였는데, 요소 0.5% 액을 엽면시비하고 2개를 적과한 처리구가 34%수준으로 자연광에 비해 다른 처리보다 높은 상품수량을 보였다. 따라서 참외재배시 과실 착과후 10일경부터 강우 등에 의해 장기간 저광도 조건이 지속될 것으로 전망되면 상품수량의 급격한 저하를 막기 위하여 주당 6개의 착과 과실중에서 2개를 적과하고, 요소 0.5%액을 2회 정도 엽면시비 해주는 것이 바람직 할 것으로 사료된다.