In the velocimeter, the ultrasonic pulse signal is used for measuring the profile velocity of moving targets distributed in space because of the merits of its high distance resolution and harmless affect to the human body. The velocity reading in conventional ultrasonic pulsed velocimeter depends on the wave pattern reflecting the spatial distribution of scatters and includes observational error due to the signal processing of analyzing pulse signal. In this paper, we evaluate an influence of the received waveform of pulsed signal on the velocity information by setting a model. Subsequently, in order to improve the distance resolution and to obtain precise velocity information without the influence of the spatial distribution of scatterers, we propose a new method for the analysis of Doppler pulsed signal, in which the pulsed signal is transformed into a phase function with local data. Finally, it is confirmed that the performance of the velocimeter is more improved in the proposed method than in the conventional one.

In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ±0.006℃ at 800℃, temperature uniformity for graphite boat around was within ±0.15℃ at 650℃, and cooling rate was controllable from 2.2℃/min to 0.05℃/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.