ITO 투명 전극 필름은 디스플레이, 전기 자동차 등 산업 전 범위에서 널리 사용되는 전자 재료이다. 본 연구에서는 이러한 indium tin oxide (ITO) 필름의 열성형 안정성을 향상시키기 위하여 Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) 전도성 고분자 코팅 용액 조성을 결정하였다. 1000 S/cm의 고 전도성을 보이는 PEDOT:PSS 용액에 끓는점이 각기 다른 4가지 종류의 용매를 희석하였고, 코팅 전 후 면저항 변화를 분석하였다. 또한 380~800 nm 영역의 광 투과율 분 석 및 Raman 스펙트럼 분석을 통하여 PEDOT:PSS 박막이 코팅된 ITO 투명 전극의 전기적 특성 결정 메커니즘을 규명하였 다. 230°C 열성형 공정 결과 ITO 필름은 113% 연신 상태에서 이미 전기 전도성을 읽었지만, ethylene glycol을 희석 용매로 사용하여 얻어진 전도성 고분자 박막이 적용된 ITO 필름은 126% 고 연신 상태에서도 초기 60 Ω/sq 면저항을 246 Ω/sq로 유지하는 우수한 전기 전도성을 보였다.

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with hightransparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolvedthese problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetronroll-to-roll sputter system utilizing ITO and SiO2 targets of ITO and SiO2. In this experiment, the effect of D.C. power, windingspeed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point ofsheet resistance, transmittance, and chromaticity(b*). The deposition of SiO2 was performed with RF power of 400W, Ar gasof 50sccm and the deposition of ITO, DC power of 600W, Ar gas of 50sccm, O2 gas of 0.2sccm, and winding speed of 0.56m/min. High quality ITO thin films without SiO2 layer had chromaticity of 2.87, sheet resistivity of 400ohm/square, and trans-mittance of 88% and SiO2-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709ohm/square, and transmittanceof more than 90% were obtained. As a result, SiO2 was coated on PET before deposition of ITO, their chromaticity(b*) andtransmittance were better than previous results of ITO films. These results show that coating of SiO2 induced arisingchromaticity(b*) and transmittance. If the thickness of SiO2 is controlled, sheet resistance value of ITO film will be expected tobe better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.

Transparent ITO films were deposited on a polycarbonate substrate with RF magnetron sputtering in a pure argon(Ar) and oxygen (O2) gas atmosphere, and then post deposition electro annealed for 20 minutes in a 4×10-1Pa vacuum. Electronbombardment with an accelerating voltage of 100V increased the substrate temperature to 120oC. XRD analysis of the depositedITO films did not show any diffraction peaks, while electro annealed films indicated the growth of crystallites on the (211), (222),and (400) planes. The sheet resistance of ITO films decreased from 103 to 82Ω/□. The optical transmittance of ITO films inthe visible wavelength region increased from 85 to 87%. Observation of the work function demonstrated that the electro-annealingincreased the work function of ITO films from 4.4 to 4.6eV. The electro annealed films demonstrated a larger figure of meritof 3.0×10-3Ω-1 than that of as deposited films. Therefore, the electro annealed films had better optoelectrical performances thanas deposited ITO films.