Pure SnO2 has proven very difficult to densify. This poor densification can be useful for the fabrication of SnO2 with a porous microstructure, which is used in electronic devices such as gas sensors. Most electronic devices based on SnO2 have a porous microstructure, with a porosity of > 40%. In pure SnO2, a high sintering temperature of approximately 1300°C is required to obtain > 40% porosity. In an attempt to reduce the required sintering temperature, the present study investigated the low-temperature sinterability of a current system. With the addition of TiO2, the compositions of the samples were Sn1-xTixO2-CoO(0.3wt%)-CuO(2wt%) in the range of x ≤ 0.04. Compared to the samples without added TiO2, densification was shown to be improved when the samples were sintered at 950°C. The dominant mass transport mechanism appears to be grain-boundary diffusion during heat treatment at 950°C.

The low-temperature sinterability of TiO2-CuO systems was investigated using a solid solution of SnO2. Sample powders were prepared through conventional ball milling of mixed raw powders. With the SnO2 content, the compositions of the samples were Ti1-xSnxO2-CuO(2 wt.%) in the range of x  0.08. Compared with the samples without SnO2 addition, the densification was enhanced when the samples were sintered at 900oC. The dominant mass transport mechanism seemed to be grain-boundary diffusion during heat treatment at 900oC, where active grain-boundary diffusion was responsible for the improved densification. The rapid grain growth featured by activated sintering was also obstructed with the addition of SnO2. This suggested that both CuO as an activator and SnO2 dopant synergistically reduced the sintering temperature of TiO2.

Aluminum nitride (AlN) has excellent electrical insulation property, high thermal conductivity, and a low thermal expansion coefficient; therefore, it is widely used as a heat sink, heat-conductive filler, and heat dissipation substrate. However, it is well known that the AlN-based materials have disadvantages such as low sinterability and poor mechanical properties. In this study, the effects of addition of various amounts (1-6 wt.%) of sintering additives Y2O3 and Sm2O3 on the thermal and mechanical properties of AlN samples pressureless sintered at 1850oC in an N2 atmosphere for a holding time of 2 h are examined. All AlN samples exhibit relative densities of more than 97%. It showed that the higher thermal conductivity as the Y2O3 content increased than the Sm2O3 additive, whereas all AlN samples exhibited higher mechanical properties as Sm2O3 content increased. The formation of secondary phases by reaction of Y2O3, Sm2O3 with oxygen from AlN lattice influenced the thermal and mechanical properties of AlN samples due to the reaction of the oxygen contents in AlN lattice.

This paper reports the effect of sintering processes and additives on the microstructures and mechanical properties of -SiC composite ceramics. We fabricated sintered bodies of -20 vol.% SiC with or without sintering additive, such as C or , densified by spark plasma sintering as well as hot pressing. While almost full densification was achieved regardless of sintering processes or sintering additives, significant grain growth was observed in the case of spark plasma sintering, especially with . With sintered bodies, mechanical properties, such as flexural strength and Vickers hardness, were also examined.

(1-x)CaTi O3-xLa(Z n12/ Ti12/) O3의 마이크로 유전특성을 조사하였다. x가 증가함에 따라 비유전율과 공진주파수의 온도계수는 감소하였으며, Qㆍ f0는 증가하였다. 그 결과 x=0.5인 (C a0.5L a0.5)( Ti0.75Z n0.25) O3의 조성에서 εr=51, Qㆍ f0=38,000 (at 7 GHz), τf=+5ppm/˚C의 유전특성이 나타났다. (C a0.5L a0.5)( Ti0.75Z n0.25) O3조성의 소결온도를 저하시키기 위하여 B i2 O3를 주조성으로한 소결체를 첨가하여 소결 및 유전특성을 조사하였다. 1wt% 0.76B i2 O3-0.24NiO가 첨가된 경우 소결온도는 150˚C 낮아졌으며, 비유전율 (εr), 공진주파수의 온도계수(τf), Qㆍ f0가 각각 50+5ppm/˚C, 35,000인 마이크로파 유전특성이 얻어졌다. 또한 3wt%의 0.76B i2 O3-0.24NiO가 첨가된 경우 소결온도는 200˚C 저하되었고, 비유전율 (εr)과 공진주파수의 온도계수 (τf)는 변하기 않았으나, Qㆍ f0값이 38,000에서 25,000으로 저하되었다. 25,000으로 저하되었다.되었다.되었다.되었다.