Boron-doped amorphous carbon (BDAC) thin films with a regular oxygen reduction reaction (ORR) catalytic activity were synthesized in a hot filament chemical vapor deposition device using a mixture of CH4 and H2 as a gas source and B2O3 as a boron source and then oxidized in air at 380–470 °C for 15–75 min. Scanning electron microscope, transmission electron microscope, Raman spectroscopy, X-ray photoelectron spectroscopy, and electrochemical tests were used to characterize the physical and electrochemical properties of the BDAC catalysts. It was concluded that the BDAC catalyst oxidized at 450 °C for 45 min showed the best ORR catalytic activity in alkaline medium. The oxygen reduction potential and the transfer electron number n, respectively, are − 0.286 V versus Ag/AgCl and 3.24 from the rotating disk electrode experiments. The treated carbon film has better methanol resistance and stability than the commercial Pt/C catalyst.

The self-propagating high temperature synthesis approach was applied to synthesize amorphous boron nanopowders in argon atmospheres. For this purpose, we investigated the characteristics of a thermally induced combustion wave in the B2O3 + α Mg system(α = 1.0-8.0) in an argon atmospheres. In this study, the exothermic nature of the B2O3-Mg reaction was investigated using thermodynamic calculations. Experimental study was conducted based on the calculation data and the SHS products consisting of crystalline boron and other compounds were obtained starting with a different initial molar ratio of Mg. It was found that the B2O3 and Mg reaction system produced a high combustion temperature with a rapid combustion reaction. In order to regulate the combustion reaction, NaCl, Na2B4O7 and H3BO3 additives were investigated as diluents. In an experimental study, it was found that all diluents effectively stabilized the reaction regime. The final product of the B2O3 + α Mg system with 0.5 mole Na2B4O7 was identified to be amorphous boron nano-powders(< 100 nm).

pMOS소자의 p+게이트 전극으로 다결정실리콘과 비정질실리콘을 사용하여 고온의 열처리 공정에 따른 붕소이온의 침투현상을 high frequency C-V plot, Constant Current Stress Test(CCST), Secondary Ion Mass Spectroscopy(SIMS) 및 Transmission Electron Microscopy(TEM)를 이용하여 비교하였다. C-V plot분석 결과 비정질실리콘 게이트가 다결정실리콘 게이트에 비해 flatband전압의 변화가 작게 나타났으며, 게이트 산화막의 절연파괴 전하밀도에서는 60~80% 정도 향상된 값을 나타내었다. 비정질실리콘 게이트는 증착시 비정질로 형성되는 구조로 인한 얇은 이온주입 깊이와 열처리 공정시 다결정실리콘에 비교하여 크게 성장하는 입자 크기 때문에 붕소이온의 침투 경로가 되는 grain boundary를 감소시켜 붕소이온 확산을 억제한 것으로 생각된다. Electron trapping rate와 flatband 전압 변화와의 관계에 대하여 고찰하였다.