PCB 제조에서 photoresist와 Copper Clad Laminate(CCL)의 구리표면과의 부착력을 항상시 키기 위하여 사용되는 soft etching제를 제조하기 위하여 과산화수소 사용을 배제하고, 유기산과 유기과 산화물을 이용하여 산의 종류, 농도, 에칭시간 등에 따른 구리표면의 에칭속도, 표면 조도, 및 오염도 등 을 조사하였다. 또한 에칭 후의 표면의 얼룩을 제거하기 위한 안정제의 최적 배합 및 농도도 확립하였 다. 본 연구 결과 유기산의 종류 중에서는 아세트산이 초기 구리 에칭속도가 가장 빨랐으며, 농도가 0.04 M이었을 때 0.4 μm/min이였다. 유기과산화물인 APS의 농도는 높을수록 에칭속도가 가장 빨랐으나, 표면 오염이 심각하였다. 안정제 용액의 조성도 표면 오염도에 큰 영향을 주었다. 결과적 0.04 M 아세 트산, 0.1M APS에 4 g/L의 안정제(ST-1)를 첨가한 에칭액의 경우 0.37 μm/min의 에칭속도와 표면 오염이 전혀 없으며, 표면 조도도 가장 우수하였다. 즉, CCL과 photoresist와 접착력을 향상시킬 수 있 을 것으로 판단된다.

This essay talks about research of robust design for quality improvement of production procedure of Wet Etchant. It suggested the optimum design method in consideration of specific capability value that is the way to maximize the quality of product in the production system by using Daguchi parameter design method while finding factors affecting product quality with analysis of production system of product A from producer D. Also, it set long term of 6months as noise factor and let it to be the robust design that can find the optimum condition of control factor that is dull to the changes of each month, that is the change in noise factor. The control factor which affects the product quality is decided as combination method, temperature of raw material, combination time and as there are too many possibilities for combination methods, we performed 4 methods first based on previous research data then derived three ways with product that passed SPEC and set as the factor. As a result of application of optimum production procedure suggested in this essay to the actual production process with its standardization, there was a effect of drop of more than 10particles in comparison to the particle number of previous product and also it brought the effect that resulted the stable number of particle of under 30 that is what the client company suggested.

We used Cu as a representative of metals to be directly adsorbed on the bare Si surface and studied its removal DHF, DHF-H2O2 and BHF solution. It has been found that Cu ion in DHF adheres on every Si wafer surface that we used in our study (n, p, n+, p+) especially on the n+-Si surface. The DHF-H2O2 solution is found to be effective in removing metals featuring high electronegativity such as Cu from the p-Si and n-Si wafers. Even when the DHF-H2O2 solution has Cu ions at the concentration of 1ppm, the solution is found effective in cleaning the wafer. In the case the n+-Si and p+-Si wafers, however, their surfaces get contaminated with Cu When Cu ion of 10ppb remains in the DHF-H2O2 solution. When BHF is used, Cu in BHF is more likely to contaminate the n+-Si wafer. It is also revealed that the surfactant added to BHF improve wettability onto p-Si, n-Si and p+-Si wafer surface. This effect of the surfactant, however, is not observed on the n+-Si wafer and is increased when it is immersed in the DHF-H2O2 solution for 10min. The rate of the metallic contamination on the n+-Si wafer is found to be much higher than on the other Si wafers. In order to suppress the metallic contamination on every type of Si surface below 1010atoms/cm2, the metallic concentration in ultra pure water and high-purity DHF which is employed at the final stage of the cleaning process must be lowered below the part per trillion level. The DHF-H2O2 solution, however, degrades surface roughness on the substrate with the n+ and p+ surfaces. In order to remove metallic impurities on these surfaces, there is no choice at present but to use the NH4OH-H2O2-H2O and HCl-H2O2-H2O cleaning.