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        검색결과 5

        1.
        2011.06 KCI 등재 SCOPUS 구독 인증기관 무료, 개인회원 유료
        The power capacitors used as vehicle inverters must have a small size, high capacitance, high voltage, fast response and wide operating temperature. Our thin film capacitor was fabricated by alumina layers as a dielectric material and a metal electrode instead of a liquid electrolyte in an aluminum electrolytic capacitor. We analyzed the micro structures and the electrical properties of the thin film capacitors fabricated by nano-channel alumina and metal electrodes. The metal electrode was filled into the alumina nano-channel by electroless nickel plating with polyethylene glycol and a palladium catalyst. The spherical metals were formed inside the alumina nano pores. The breakdown voltage and leakage current increased by the chemical reaction of the alumina layer and PdCl2 solution. The thickness of the electroless plated nickel layer was 300 nm. We observed the nano pores in the interface between the alumina layer and the metal electrode. The alumina capacitors with nickel electrodes had a capacitance density of 100 nF/cm2, dielectric loss of 0.01, breakdown voltage of 0.7MV/cm and leakage current of 104μA.
        4,000원
        2.
        2007.12 KCI 등재 SCOPUS 구독 인증기관 무료, 개인회원 유료
        Piezoelectric energy harvesting from our surrounding vibration has been studied for driving the wireless sensor node. To change the vibration energy into the electric-energy efficiently, the natural frequency of cantilever needs to be adjusted to that of a vibration source. When adding 6.80g mass on the end of the fabricated cantilever, a natural frequency shifts from 136 Hz into 49.5 Hz. In addition, electro-mechanical coupling factor increased from 10.20% to 11.90% and resulted in the 1.18 times increase of maximum output power.
        3,000원
        3.
        1994.04 KCI 등재 SCOPUS 구독 인증기관 무료, 개인회원 유료
        직접 접합된 Si 기판들의 접합계면에 관하여 연구하였다. 경사 연마 및 결함묘사, 계면의 비등방성 식각, TEM 및 HR-TEM 등의 방법들을 이용하여 접합계면에 발생하는 계면결함과 과도영역, 여러형태의 void 들, 계면 산화막의 형성 및 안정화 과정등을 조사하였다. 또한 접합된 Si-Sio2계면과 일반적인 Si-Sio2계면의 형상등을 비교 검토하였다.
        4,000원
        5.
        1992.10 KCI 등재 SCOPUS 구독 인증기관 무료, 개인회원 유료
        (100) 실리콘 기판에 대해 깊온 비등방성 식각을 행한 경우 식각면의 가장자리에 존재하는 욜균일성은 식각 계면의 격자결함과 기계적 응력에 의한 것임을 판찰할 수 있었다.
        3,000원