AlN thin film is highly valued for use as a high-temperature material because of its excellent heat resistance, thermal conductivity and high mechanical strength. In addition, it is known as a replacement material for ZnO, because it can be applied to surface acoustic wave elements and high-frequency filters using piezoelectric properties or sound velocity. In this study, an alternating sputtering method was used to fabricate an AlN thin film with excellent film quality. The c-axis orientation and residual stress of the fabricated AlN thin film were measured using an X-ray diffraction method. Nitrogen gas pressure and target electrode conversion time are important deposition conditions when producing a thin film using the alternating sputtering method. The AlN thin film fabricated on the glass substrate using the alternating planar magnetron sputtering method exhibited a crystal structure in which the c-axis was preferentially oriented in the normal direction of the substrate surface. The c-axis orientation was better when the target electrode switching time was short under the condition of low nitrogen gas pressure. Residual stress is tensile stress in the very low nitrogen gas pressure range (PN ≤ 0.3 Pa), compressive stress in the low nitrogen gas pressure range (0.3 < PN < 0.9 Pa), and in the high nitrogen gas pressure range (PN ≥ 0.9 Pa), it becomes tensile stress. Residual stress shows tensile stress when the switching time is short, tensile stress decreases as the switching time increases, and becomes compressive stress when the switching time is sufficiently long (300 to 600 s). Compared to the simultaneous sputtering of two targets, the use of the alternating sputtering method can produce a high-quality thin film with excellent c-axis orientation and low residual stress.

TiO2/Ag/TiO2 (TAT) tri-layer films were deposited using radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering on a glass substrate, and then rapid thermal annealed at 150 and 300 °C for 10 minutes. The influence of annealing temperature on the optical and electrical properties of the films was investigated. As annealing temperature was rapidly increased from room temperature to 300 °C, the grain size of the TiO2 (004), (204) and Ag (200) increased from 36.8, 14.3, 22.1 nm to 43.2, 16.6, 23.4 nm, respectively and the electrical resistivity decreased from 4.64 × 10-5 Ω cm to 2.79 × 10-5 Ω cm. Also, the average visible transmittance increased from 82.7 % to 84.9 %. In addition, the electromagnetic interference shielding effectiveness of TAT films was also increased to 31.7 db after annealing at 300 °C. These results demonstrate that post-deposition rapid thermal annealing is an effective method for enhancing the electrical and optical properties of TAT films.

고체전해질은 높은 에너지 밀도와 안전성을 갖춘 차세대 리튬이온전지에 꼭 필요한 핵심 요소다. 이러한 고체전 해질의 제작을 위해서 기존 고체전해질의 낮은 이온전도도와 높은 계면저항 문제를 해결해야 한다. 본 연구에서는 강화된 이 온 전도성과 계면 안정성을 지닌 PVDF-HFP 고분자에 분산된 Li7La3Zr2O12 (LLZO) 나노와이어 복합체를 기반으로 하는 새 로운 전해질(PVDF-HFP/LLZO/SN, PHLS membrane)을 제안한다. PHLS에 용매 열압착(Sovlent heat press, SHP)을 통해 계 면 저항과 내부 공극이 감소된 PHLS-(SHP)는 30°C에서 2.06 × 10-4 S/cm의 높은 이온 전도도, 4.5 V (vs. Li/Li+)의 넓은 전 기화학적 전위 창, 리튬 금속과 전해질 사이의 안정된 계면 안정성을 나타냈다. 0.2 mA/cm2에서 수행된 Li 대칭 셀을 사용한 전기화학적 테스트에서 150 시간 이상 안정성을 유지하는 것으로 확인되었으며, 이는 당사의 복합 기반 고체 전해질을 활용 하여 전기화학적 성능이 향상되었음을 시사한다.

Solar energy has been recognized as an alternative energy source that can help address fuel depletion and climate change issues. As a renewable energy alternative to fossil fuels, it is an eco-friendly and unlimited energy source. Among solar cells, thin film Cu2ZnSn(S,Se)4 (CZTSSe) is currently being actively studied as an alternative to heavily commercialized Cu (In,Ga)Se2 (CIGS) thin film solar cells, which rely upon costly and scarce indium and gallium. Currently, the highest efficiency achieved by CZTSSe cells is 14.9 %, lower than the CIGS record of 23.35 %. When applied to devices, CZTSSe thin films perform poorly compared to other materials due to problems including lattice defects, conduction band offset, secondary phase information, and narrow stable phase regions, so improving their performance is essential. Research into ways of improving performance by doping with Germanium and Cadmium is underway. Specifically, Ge can be doped into CZTSSe, replacing Sn to reduce pinholes and bulk recombination. Additionally, partially replacing Zn with Cd can facilitate grain growth and suppress secondary phase formation. In this study, we analyzed the device’s performance after doping Ge into CZTSSe thin film using evaporation, and doping Cd using chemical bath deposition. The Ge doped thin film showed a larger bandgap than the undoped reference thin film, achieving the highest Voc of 494 mV in the device. The Cd doped thin film showed a smaller bandgap than the undoped reference thin film, with the highest Jsc of 36.9 mA/cm2. As a result, the thin film solar cells achieved a power conversion efficiency of 10.84 %, representing a 20 % improvement in power conversion efficiency compared to the undoped reference device.

High-frequency soft magnetic Ni, Fe, and Co-based thin films have been developed, typically as nanocrystals and amorphous alloys. These Ni, Fe, and Co-based thin films exhibit remarkably good frequency dependence up to high frequencies of several tens of MHz. These properties arise from the moderate magnetic anisotropy and fairly high electrical resistivity that result from the microstructural characteristics of the nanocrystalline and amorphous states. In this paper, Al-Co/AlN-Co and Al-N/AlN-Co multilayer films were deposited using two-facing-target type sputtering (TFTS). Their microstructures, magnetic and electrical properties were studied with the expectation that inserting Al-Co or Al-N as an interlayer could effectively reduce the coercive force and produce films with relatively high resistivity. A new approach is presented for the fabrication of Al-Co (Al-N)/AlN-Co multilayer films, prepared with the TFTS system. The deposited films were isothermally annealed at different temperatures and investigated for microstructure, magnetic properties and resistivity. The TFTS method used in this experiment is suitable for fabricating Al-Co(Al-N)/AlN-Co multilayer films with different layer thickness ratio (LTR). The annealing conditions, thickness of the multilayer film, and LTR can control the physical properties as well as the microstructure of the manufactured film. Magnetization and resistance increased and coercivity decreased as LTR decreased. The thin film with LTR = 0.175 exhibited high resistivity values of 2,500 μΩ-cm, magnetization of 360 emu/cm3, and coercivity of 5 Oe. Results suggests that thin films with such good resistivity and magnetization would be useful as high-density recording materials.

Nano-oxide dispersion–strengthened (ODS) superalloys have attracted attention because of their outstanding mechanical reinforcement mechanism. Dispersed oxides increase the material’s strength by preventing grain growth and recrystallization, as well as increasing creep resistance. In this research, atomic layer deposition (ALD) was applied to synthesize an ODS alloy. It is useful to coat conformal thin films even on complex matrix shapes, such as nanorods or powders. We coated an Nb-Si–based superalloy with TiO2 thin film by using rotary-reactor type thermal ALD. TiO2 was grown by controlling the deposition recipe, reactor temperature, N2 flow rate, and rotor speed. We could confirm the formation of uniform TiO2 film on the surface of the superalloy. This process was successfully applied to the synthesis of an ODS alloy, which could be a new field of ALD applications.

해당 연구는 산업 폐수에서 염료를 효율적으로 제거하기 위한 고급 박막 나노복합체(TFN) 기반 나노여과막을 개 발하여 효과적인 폐수 처리 방법을 제시합니다. 최근 연구의 동향을 보면, 나노카본, 실리카 나노스피어, 금속-유기 프레임워 크(MOF) 및 MoS2와 같은 혁신적인 재료를 포함하는 TFN 막의 제조에 중점을 둡니다. 주요 목표는 염료 제거 효율을 향상 시키고 오염 방지 특성을 개선하며 염료/염 분리에 대한 높은 선택성을 유지하는 것입니다. 이 논문은 넓은 표면적, 기계적 견고성 및 특정 오염 물질 상호 작용 능력을 포함하여 이러한 나노 재료의 뚜렷한 이점을 활용하여 현재 나노여과 기술의 제 한을 극복하고 물 처리 문제에 대한 지속 가능한 솔루션을 제공하는 것을 목표로 합니다.