We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A POCl3 diffusion doping process is used to produce a p-n junction solar cell device based on a poly- Si wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage(Voc) is 0.59 V and the short circuit current(Isc) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage(VPC-AFM) at which the current is 0 A in the I-V characteristic curves increases sharply up to 18 W/m2, peaking and slowly falling as light intensity increases. Here, VPC-AFM at 18 W/m2 is 0.29 V, which corresponds to 59 % of the average Voc value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are 350℃-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of 400℃-180minutes and 500℃-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as Al3Ti and Ti7Al5Si12.

In order to improve the high temperature oxidation resistance and lifespan of mat type porous carbon insulation, SiC was coated on carbon insulation by solution coating using polycarbosilane solution, curing in an oxidizing atmosphere at 200 oC, and pyrolysis at temperatures up to 1200 oC. The SiOC phase formed during the pyrolysis process was converted into SiC crystals as the heat treatment temperature increased, and a SiC coating with a thickness of 10-15 nm was formed at 1600 oC. The SiC coated specimen showed a weight reduction of 8.6 % when it was kept in an atmospheric environment of 700 oC for 1 hour. On the other hand, the thermal conductivity was 0.17W/mK, and no difference between states before and after coating was observed at all.

In this study, poly-silicon sludge was used in replacement with Portland cement as SCMs. Poly-silicon sludge has an ability to improve the durability to the concrete system. Thus, the chloride penetration test of PS specimens was conducted for the confirmation of the durability. From the results, The penetration depth of the plain specimens is deepest, and gradually decreases as PS substitution rate increases.