To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

This study develops a highly transparent ohmic contact using phosphorus doped ZnO with current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The phosphorus doped ZnO transparentohmic contact layer was prepared by radio frequency magnetron sputtering with post-deposition annealing. The transmittance ofthe phosphorus doped ZnO exceeds 90% in the region of 440nm to 500nm. The specific contact resistance of the phosphorusdoped ZnO on p-GaN was determined to be 7.82×10-3Ω·cm2 after annealing at 700oC. GaN LED chips with dimensions of300×300µm fabricated with the phosphorus doped ZnO transparent ohmic contact were developed and produced a 2.7Vincrease in forward voltage under a nominal forward current of 20mA compared to GaN LED with Ni/Au Ohmic contact.However, the output power increased by 25% at the injection current of 20mA compared to GaN LED with the Ni/Au contactscheme.