Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with a coplanar structure were fabricated to investigate the feasibility of their potential application in large size organic light emitting diodes (OLEDs). Drain currents, used as functions of the gate voltages for the TFTs, showed the output currents had slight differences in the saturation region, just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages of the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. After the application of a positive bias voltage stress for 50,000 s, the values of the threshold voltage of the coplanar structure TFTs were only slightly shifted, by 0.18 V, indicative of their stability. The coplanar structure TFTs were embedded in OLEDs and exhibited a maximum luminance as large as 500 nits, and their color gamut satisfied 99 % of the digital cinema initiatives, confirming their suitability for large size and high resolution OLEDs. Further, the image density of large-size OLEDs embedded with the coplanar structure TFTs was significantly enhanced compared with OLEDs embedded with conventional TFTs.

Two different emitting compounds, 1-[1,1;3,1]Terphenyl-5-yl-6-(10-[1,1;3,1]terphenyl-5-ylanthracen-9-yl)-pyrene (TP-AP-TP) and Poly-phenylene vinylene derivative (PDY 132) were used to white OLED device. By incorporating adjacent blue and yellow emitting layers in a multi-layered structure, highly efficient white emission has been attained. The device was fabricated with a hybrid configuration structure: ITO/PEDOT (40 nm)/PDY-132 (8∼50 nm)/NPB (10 nm)/TP-AP-TP (30 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). After fixing TP-AP-TP thickness of 30 nm by evaporation, PDY-132 thickness varied with 8, 15, 35, and 50 nm by spin coating in device. The luminance efficiency of the white devices at 10 mA/cm2 were 2.93 cd/A∼6.55 cd/A. One of white devices showed 6.55 cd/A and white color of (0.290, 0.331).

4-Methyl-7-(10-phenyl-anthracen-9-yl)-chromen-2-one (PhAC), 4-Methyl-7-(10-naphthalen-1-yl-anthracen-9-yl)-chromen-2-one (1-NAC), 4-Methyl-7-(10-naphthalen-2-yl-anthracen-9-yl)-chromen-2-one (2-NAC), and 7-Anthracen-9-yl-4-methyl-chromen-2-one (AC) were synthesized through Suzuki aryl-aryl coupling reaction. Four compounds were used as emitting layer (EMLs) in non-doped OLEDs with the following structures: ITO/2-TNATA (60 nm)/NPB (15 nm)/EMLs (35 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). Non-doped devices showed luminescence efficiency of 2.14, 2.07, 1.52, and 1.12 cd/A at a current density of 10 mA/cm2.

New three emitting compounds, AK-1, AK-2 and AK-3 including diazocine moiety were synthesized through Suzuki-coupling reaction. Physical properties such as optical, electroluminescent properties were investigated. UV-visible spectrum of AK-1, AK-2 and AK-3 in film state showed maximum 392, 393 and 401 nm. PL spectrum of AK-1, AK-2 and AK-3 showed maximum emission wavelength of 472, 473 and 435 nm. Three compounds were used as EML in OLED device: ITO/2-TNATA (60 nm)/NPB (15 nm)/EML (35 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). AK-3 OLED device showed C.I.E value of (0.18, 0.26) and luminance efficiency of 0.51 cd/A at 10 mA/cm2. New derivatives including diazocine moiety were introduced as OLED emitting material and the EL efficiency was increased by the proper combination of core and side group.

4-methyl-7-(10-(pyren-1-yl)anthracen-9-yl)-2H-chromen-2-one (PAC), 7,7’-(anthracene-9,10-diyl)bis(4- methyl-2H-chromen-2-one) (CAC), 7-Anthracen-9-yl-4-methyl-chromen-2-one(AC), and 7-(naphthalen-1-yl)-2Hchromen-2-one (NC) were synthesized through Suzuki aryl-aryl coupling reaction. Optical and electroluminescence (EL) properties were evaluated by UV-visible absorption, photoluminescence (PL) spectra, and EL devices. Synthesized compounds were used as an emitting layer (EML) in non-doped device with the following structures: ITO/2-TNATA (60 nm)/NPB (15 nm)/synthesized compounds (35 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). Non-doped devices showed luminance efficiency (L.E.) of 1.38, 1.03, 1.12, and 0.39 cd/A at a current density of 10 mA/cm2.

7-(4-([1,1-biphenyl]-4-yl(9,9-dimethyl-9H-fluoren-2-yl)amino)phenyl)-4-methyl-2H-chromen-2-one (BPFA-C) including coumarin moiety was synthesized through Suzuki aryl-aryl coupling reaction. Optical and electrical properties were examined by UV-visible absorption spectra, PL spectra, and AC-2. UV-visible spectrum of BPFA-C in a film state showed maximum absorption wavelength of 367 nm. PL spectrum of BPFA-C show maximum emission wavelength of 511 nm. BPFA-C showed highly efficient luminescence property. EL spectrum of BPFA-C exhibited a maximum value of 504 nm and BPFA-C device provided luminescence efficiency of 4.59 cd/A, power efficiency of 3.17 lm/W, and CIE (x,y) of (0.25, 0.53) at a current density of 10 mA/cm².

본 연구에서는 SiO2 나노파티클-전도성 고분자 PEDOT:PSS 복합 구조 기반의 유기발광다이오 드용 내부 광추출 구조를 간단한 용액 공정으로 제작하였다. 또한, 다양한 농도의 SiO2 나노파티클을 PEDOT:PSS에 분산하여 그 구조를 확인하였고, 상부/하부 버퍼레이어의 도입이 내부 광추출 구조 형성에 미치는 영향에 관하여 알아보았다.

본 연구에서는 대기 중 용액공정으로 유기발광다이오드(OLED)를 구현하였으며, 발광재료로서 고분자와 저분자 가 혼합된 하이브리드 host 물질과 저분자 dopant를 사용하였고, 고분자 소재의 홀이동층과 저분자 소재의 전자이동층 을 사용하였다. 모든 유기층들을 대기 중에서 용액공정으로 스핀코팅 되었으며, 용액공정 기반 OLED의 효율 향상을 위 해서 발광층의 두께 및 열처리 공정의 최적화 조건에 대해서 살펴보았다.

유기 발광 다이오드(OLED)는 차세대 조명으로 많은 관심을 받고 있으며, 디스플레이로서의 상용화에 이미 성공하였고, 대체 조명 시장에까지 그 영역을 넓혀가고 있다. OLED의 급격한 기술 발전에도 불구하고, OLED의 유 기층/투명전극과 기판에서 발생하는 내부 전반사에 의해서 일반적인 OLED의 외부 광자 효율은 현재 20~30% 정도에 머무르고 있는 실정이다. 따라서, 고효율의 OLED의 구현을 위해서는 고성능의 광추출 구조의 개발이 절실히 필요하 다. 내부 광추출 구조를 소자에 적용하기 위해서는 많은 어려움이 있으며, 특히 소자의 누설전류를 방지하기 위해서 광추출 구조의 표면 거칠기를 최소화하는 것이 매우 중요하다. 본 연구에서는 ZnO 나노파티클-투명 고분자 복합 구 조의 광추출 구조를 쉬운 제작 방법으로 구현하였으며, 나노파티클의 분산에 따른 광추출 구조의 광학적 특성 및 표 면 구조의 영향에 대해서 알아보았다.

본 연구에서는 발광층의 전자와 정공의 재결합 영역을 확인하고, 단계적 도핑구조를 이용하여 여기자들의 효율적인 분배를 통해 roll-off 효율을 감소시켜서 녹색 인광 유기발광다이오드의 수명 증가 를 나타냈다. 발광층 내 호스트는 양극성의 4,4,N,N'-dicarbazolebiphenyl (CBP)를 사용하여 전하의 이 동을 원활하게 하였다. 발광층을 네 구역으로 분할하여 각각 소자를 제작하였고, 네 구역의 도판트 농도 에 따라 발광효율과 수명 향상을 보였다. 이로써 발광층 내의 단계적 도핑구조를 이용하여 캐리어와 여 기자들이 원활하게 분배된 것을 확인하였다. 기준소자 대비 발광층의 도판트 농도를 5, 7, 11, 9% 순서 로 단계적 도핑구조를 적용한 device C의 수명이 약 73.70% 증가하였고, 휘도 효율은 51.10 cd/A와 외 부 양자 효율은 14.88%의 성능을 보였다.

본 연구에서는 전하 조절층을 이용하여 녹색 인광 유기발광다이오드의 효율의 향상을 나타냈다. 양극성의 4,4,N,N'-dicarbazolebiphenyl (CBP)를 호스트와 전하 조절층으로 사용하여 발광층 내에서 전하의 이동을 원활하게 할 수 있다. 게다가 전하 조절층의 삽입으로 엑시톤을 효과적으로 발광층 내에 제한하여, 삼중항-삼중항 소멸 현상을 억제할 수 있음을 확인하였다. 발광층의 전체 두께는 유지하고, 전하 조절층의 변화를 준 다섯 개의 소자를 제작하여 최적화된 전하 조절층의 두께를 이용한 Device D는 외부 양자 효율 16.22%와 휘도 효율 55.76 cd/A의 성능을 보였다.

본 연구에서 7,7'-(2,2'dimethoxy-1,1'-binaphthyl-3,3'-diyl) bis(4-(thiophen-2-yl) benzo[e] [1,2,5] thiadiazole (TBT) 라는 binaphthyl기를 기반으로 가지는 녹색 도판트 물질을 합성하였다. 추가적으로 인광 발광 물질인 iridium(III)bis[(4,6-di-fluoropheny)-pyridinato -N,C2]picolinate (FIrpic)을 홀 수송용 호스트 물질인 N,N'-dicarbazolyl-3,5-benzene (mCP)에 도핑하고, TBT와 bis(2-phenylquinolinato)-acetylacetonate iridium(III) (Ir(pq)2acac)를 전자 수송용 호스트 물질인 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi)에 도핑하여 백색 빛을 발광하는 white organic light emitting diode (OLED)를 제작하였다. TBT를 사용하여 제작한 white OLED의 최대발광 효율과 외부 양자 효율은 각각 5.94 cd/A 과 3.23%를 나타냄을 알 수 있었다. Commission Internationale de I'Eclairage (CIE) 색 좌표의 값은 1000 nit에서 (0.34, 0.36)을 띄면서 순백색을 구현함을 확인하였다.

New organic light-emitting diodes with structure of indium-tin-oxide[ITO]/N,N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolvlamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-poly-aminophenyl) cyclohexane[TAPC]/bis(10-hydroxy-benzo(h)quinolinato)beryllium[Bebq2]/Bebq2:iridium(III)bis(2-phenylquinoline-N,C2')acetylacetonate[(pq)2Ir(acac)]/ET-137[electron transport material from SFC Co]/LiF/Al using the selective doping of 5%-(pq)2Ir(acac) in a single Bebq2 host in the two wavelength (green, orange) emitter formation were proposed and characterized. In the experiments, with a 300Å-thick undoped emitter of Bebq2, two kinds of devices with the doped emitter thicknesses of 20Å and 40Å in the Bebq2:(pq)2Ir(acac) were fabricated. The device with a 20Å-thick doped emitter is referred to as "D-1" and the device with a 4Å-thick doped emitter is referred to as "D-2". Under an applied voltage of 9V, the luminance of D-1 and D-2 were 7780 cd/m2 and 6620 cd/m2, respectively. The electroluminescent spectrum of each fabricated device showed peak emissions at the same two wavelengths: 508 nm and 596 nm. However, the relative intensity of 596 nm to 508 nm at those wavelengths was higher in the D-2 than in the D-1. The D-1 and D-2 devices showed maximum current efficiencies of 5.2 cd/A and 6.0 cd/A, and color coordinates of (0.31, 0.50) and (0.37, 0.48) on the Commission Internationale de I'Eclairage[CIE] chart, respectively.

The authors have demonstrated white oraganic light-emitting diodes (WOLED) using 1,4-bis[2-(4'-diphenylaminobiphenyl-4-yl)vinyl]benzene as fluorescent blue emitter and iridium(III) bis(5-acetyl-2-phenylpyridinato-N,C2') acetylacetonate as phosphorescent red emitter. The optimized WOLED using red host material as bis(2-methyl-8-quinolinato) -4-phenylphenolate exhibited proper color stability in comparison with the control device using 4,4'-N,N'-dicarbazole-biphenyl as red host. The white device showed a maximum luminance of 21100 cd/m2 at 14 V, luminous efficiency of 9.7 cd/A at 20 mA/cm2, and Commission Internationale de I'Eclairage (CIEx,y)coordinates of (0.32, 0.34) at 1000 cd/m2. The devices also exhibited the color shift with δCIEx,y coordinates of ± (0.01,0.01) from 100 to 20000 cd/m2.

본 논문에서는 청색 인광 발광 물질인 bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium (III) (Flrpic)과 녹색 인광 발광 물질인 fac-tris(2-phenypyridine) irdium(III) (Ir(ppy)3)와 적색 인광 발광 물질인 his(5-benzoyl-2-phenylpyridinato-C,N)iridium(III) (acetylacetonate) ((Bzppy)2Ir(acac))를 각각 적층하여 백색 유기 발광 다이오드를 제작하였고, 각각의 발광층 사이에 혼합된 스페이서인 4,4'-N,N'-dicarbazole-biphenyl (CBP):4,7-diphenyl-1,10-phenanthroline (BPhen)을 적층하여 그 때의 영향에 대하여 연구하였다. 최적화된 구조에서의 전력 효율은 0.014 mA/cm2에서의 19.7 lm/w를 나타내었으며, 0.127 mA/cm2에서의 11.5%의 외부 양자 효율을 나타내었고, 8 V에서 Commission Internationale do I'Eclairage (CIEx,y) coordinates (x=0.36, y=0.44)의 색좌표를 나타내었다.

A new blue phosphorescent material for organic light emitting diodes (OLEDs), Iridium(III)bis[2-(4-fIuoro-3-benzonitrile)-pyridinato-N,C2'] picolinate (Firpic-CN), was synthesized and studied. We compared characteristics of Firpic-CN and Bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) which has been used for blue dopant materials frequently. The devices structure were indium tin oxide (ITO) (1000 a)/N,N'-diphenyl-N,N'-(2-napthyl)-(1,1'-phenyl)-4,4'-diamine (NPB) (500 a)/4,4'-N,N'-dicarbazole-biphyenyl (CBP) : FIrpic and FIrpic-CN (X wt%)/4,7-diphenyl-1,10-phenanthroline (BPhen) (300 a)/lithum quinolate (Liq) (20 a)/Al (1000 a). 15 wt% FIrpic-CN doped device exhibits a luminance of 1450 cd/m2 at 12.4 V, luminous efficiency of 1.31 cd/A at 3.58mA/cm2, and Commission Internationale d'Eclairage (CIEx,y) coordinates of (0.15, 0.12) at 12 V which shows a very deep blue emission. We also measured lifetime of devices and was presented definite difference between devices of FIrpic and FIrpic-CN. Device with FIrpic-CN as a dopant presented lower longevity due to chemical effect of CN ligand.

We have seen the effects of buffer layer in organic light-emitting diodes using poly(N-vinylcarbazole)(PVK). Polymer PVK buffer layer was made using static spin-casting method. Two device structures were made; one is ITO/TPD/Alq3/Al as a reference and the other is ITO/PVK/TPD/Alq3/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage characteristics, luminance-voltage characteristics and luminous efficiency were measured with a variation of spin-casting speeds. We have obtained an improvement of luminous efficiency by a factor of two and half when the PVK buffer layer is used.

We have seen the effects of buffer layer in organic light-emitting diodes(OLEDs) using poly(N-vinylcarbazole)(PVK) depending on a concentration of PVK. Polymer PVK buffer layer was made using spin casting technique. Two device structures were fabricated; one is ITO/TPD/Alq3/Al as a reference, and the other is ITO/PVK/TPD/Alq3/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage-luminance characteristics and an external quantum efficiency were measured with a variation of spin-casting rpm speeds and PVK concentration. We have obtained an improvement of external quantum efficiency by a factor of four when the PVK concentration is 0.1wt% is used. The improvement of efficiency is expected due to a function of hole-blocking of PVK in OLEDs.