The sintering shrinkage behaviors of low temperature cofired ceramics (LTCC) and resistors were compared using commercial LTCC and thick-film resistor pastes, and factors influencing the camber of cofired resistor/LTCC bi-layers were also investigated. The onset of sintering shrinkage of the resistor occurred earlier than that of LTCC in all resistors, but the end of sintering shrinkage of the resistor occurred earlier or later than that of LTCC depending on the composition of the resistor. The sintering shrinkage end temperature and the sintering shrinkage temperature interval of the resistor increased as the RuO2/glass volume ratio of the resistor increased. The camber of cofired resistor/LTCC bi-layers was obtained using three different methods, all of which showed nearly identical trends. The camber of cofired resistor/LTCC bi-layers was not affected by either the difference in linear shrinkage strain after sintering between LTCC and resistors or the similarity of sintering shrinkage temperature ranges of LTCC and resistors. However, it was strongly affected by the RuO2/glass volume ratio of the resistor. The content of Ag and Pd had no effect on the sintering shrinkage end temperature or sintering shrinkage temperature interval of the resistor, or on the camber of cofired resistor/LTCC bi-layers.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance (electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, design and manufacture of electronic beam filament total inspection equipment for mass production were dealted with.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance (electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, analysis and modification of prototypes of electron beam filaments for mass production were dealted with.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance (electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, design and manufacture of electronic beam filament automation facilities for mass production were dealted with.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance (electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, mainly design and manufacturing of facilities for making electron beam filament were dealted with.

Thin-film shape technology is recognized for its core technology to enhance the technology of LCD, PDP, semiconductor manufacturing processes, hard disks and optical disks, and is widely used to form coated thin films of products. In addition, resistance (electron beam filament) technology for heating is used to manufacture filament for ion implants used in semiconductor manufacturing processes. By establishing an electronic beam filament production system and developing seven specifications of electronic beam filament, it is contributing to improving trade dynamics and increasing exports to Japan through localized media of theoretical imports to domestic companies. In this study, CAE analysis was performed after setting electron beam filament specification and development objectives, facilities and fabrication for electron beam filament production, electron beam filament JIG & fixture design and fabrication followed by electron beam filament prototype. Then, the automation and complete inspection equipment of the previously developed electronic beam filament manufacturing facilities was developed and researched to mass-produce them, to analyze and modify prototypes, design and manufacture automation facilities, and finally, to design and manufacture the complete inspection equipment. In this paper, mainly jig & fixture design, production and trial production of electron beam filament were dealted with.

The influences of Na and K content on the crystal phase, the microstructure and the electrical property of BaTiO3-based thermistors was found to show typical PTC effects. The crystal phase of powder calcined at 1000˚C for 4hrs showed a single phase with BaTiO3, and the crystal structure was transformed from tetragonal to cubic phase according to added amounts of Na and K. In XRD results at 43˚~47˚, the (Ba0.858Na0.071K0.071)(Ti0.9985Nb0.0015)O3-δ showed (002) and (200) peaks but the (Ba0.762Na0.119K0.119)(Ti0.9975Nb0.0025)O3-δ showed (002), (020) and (200) peaks. In sintered bodies, those calcined at 600˚C rather than at 1000˚C were dense, and for certain amounts of Na and K showed rapid decreases in grain size. In relative permittivity, the curie temperature due to the transformation of ferroelectric phase rose with added Na and K but decreased in terms of relative permittivity. In the result of the R-T curve, the sintered bodies have curie temperatures of about 140˚C and the resistivity of sintered bodies have scores of Ω·cm; the jump order of sintered bodies was shown to be more than 104 in powder calcined at 1000˚C.

RuO2와 glass의 비가 20/80과 12/88인 두종류의 후막저항계에 NTCR 특성을 나타내는 여러종류의 산화물을 첨가하였을때 저항체의 TCR과 전기비저항이 어떻게 변화하는가에 대한 실험을 실시하였다. 첨가된 TCR modifier들이 NTCR특성을 갖는다고해서 저항체의 TCR이 창상 감소되지는 않으며 또한 어떠한 modifier가 모든 저항계에 항상 일정 방향으로만 TCR을 변화시키지는 않았다. 그러나 이들 TCR modifier들을 적당량 첨가함으로써 후막저항체의 TCR과 저항값을 원하는 바대로 얻을 수 있다는 가능성을 확인하였다. 두 종류의 이상의 TCR modifier를 동시에 첨가하였을때에 첨가된 TCR modifier들 각각의 TCR변화가 합해져서 결과로 나타남으로써 이들 사용된 TCR modifier들 간에는 상호작용이 없음을 알 수 있었다. TCR modifier의 첨가량은 2~3%내로 억제하는 것이 바람직함을 알 수 있었다.