We report the synthesis and gas sensing properties of bare and ZnO decorated TeO2 nanowires (NWs). A catalyst assisted-vapor-liquid-solid (VLS) growth method was used to synthesize TeO2 NWs and ZnO decoration was performed using an Au-catalyst assisted-VLS growth method followed by a subsequent heat treatment. Structural and morphological analyses using X-ray diffraction (XRD) and scanning/transmission electron microscopies, respectively, demonstrated the formation of bare and ZnO decorated TeO2 NWs with desired phase and morphology. NO2 gas sensing studies were performed at different temperatures ranging from 50 to 400 oC towards 50 ppm NO2 gas. The results obtained showed that both sensors had their best optimal sensing temperature at 350 oC, while ZnO decorated TeO2 NWs sensor showed much better sensitivity towards NO2 relative to a bare TeO2 NWs gas sensor. The reason for the enhanced sensing performance of the ZnO decorated TeO2 NWs sensor was attributed to the formation of ZnO (n)/ TeO2 (p) heterojunctions and the high intrinsic gas sensing properties of ZnO.

Dynamic behavior of piezoelectric ZnO nanowires is investigated using finite element analyses (FEA) on FE models constructed based on previous experimental observations in which nanowires having aspect ratios of 1:2. 1:31, and 1:57 are obtained during a hydrothermal process. Modal analyses predict that nanowires will vibrate in lateral bending, uniaxial elongation/contraction, and twisting (torsion), respectively, for the three ratios. The natural frequency for each vibration mode varies depending on the aspect ratio, while the frequencies are in a range of 7.233 MHz to 3.393 GHz. Subsequent transient response analysis predicts that the nanowires will behave quasi-statically within the load frequency range below 10 MHz, implying that the ZnO nanowires have application potentials as structural members of electromechanical systems including nano piezoelectric generators and piezoelectric dynamic strain sensors. When an electric pulse signal is simulated, it is predicted that the nanowires will deform in accordance with the electric signal. Once the electric signal is removed, the nanowires exhibit a specific resonance-like vibration, with the frequency synchronized to the signal frequency. These predictions indicate that the nanowires have additional application potential as piezoelectric actuators and resonators.

Finite element analyses are carried out to understand the piezoelectric behaviors of ZnO nanowires. Three different types of ZnO nanowires, with aspect ratios of 1:2. 1:31, and 1:57, are analyzed for uniaxial compression, pure bending, and buckling. Under the uniaxial compression with a strain of 1.0 × 10−4 as the reference state, it is predicted that all three types of nanowires develop the same magnitude of the piezoelectric fields, which suggests that longer nanowires exhibit higher piezoelectric potential. However, this prediction is not in agreement with the experimental results previously reported in the literature. Such discrepancy is understood when the piezoelectric behaviors under bending and buckling are considered. When only the strain field due to bending is present in bending or buckling, the antisymmetric nature of the through-thickness stain distribution indicates that two piezoelectric fields, the same in magnitude and opposite in sign, develop along the thickness direction, which cancels each other out, resulting in a zero net piezoelectric field. Once additional strain contribution due to axial deformation is superposed on the bending, such field cancelling is compensated for due to the axial component of the piezoelectric field. Such numerical predictions seem to explain the reported experimental results while providing a guideline for the design of nanowire-based piezoelectric devices.

The effect of oxygen pressure on the synthesis of ZnO nanowires by means of melt-oxidation of an Al-Zn mixture was investigated. The samples were prepared in oxygen ambient for 1 h at 1,000˚C under oxygen pressure ranging from 0.5 to 100 Torr. ZnO nanowires were formed at oxygen pressures lower than 10 Torr. As the oxygen pressure increased from 0.5 to 10 Torr, the width of the nanowires increased, but their length decreased. The ZnO nanowires had a needle shape, which became gradually thinner toward the tip. X-ray diffraction patterns showed that the nanowires had a hexagonal wurtzite structure. However, ZnO nanowires were not observed when the oxygen pressure increased from 10 Torr to 100 Torr. In roomtemperature cathodeluminescence spectra of the ZnO nanowires, the intensity of ultra-violet emission at 380 nm increased with decreasing oxygen pressure, which indicated that the lower the oxygen pressure, the better the crystallinity of the ZnO nanowires.

1-D ZnO nanowires have been attractive for their peculiar properties and easy growth at relatively low temperature. The length, diameter, and density of ZnO nanowires were determined by the several synthetic parameters, such as PEI concentration, growth time, temperature, and zinc salt concentration. The ZnO nanowires were grown on the<001> oriented seed layer using the hydrothermal process with zinc nitrate and HMTA (hexamethylenetetramine) and their structure and optical properties were characterized. The morphology, length and diameter of the nanowires were strongly affected by the relative and/or absolute concentration of Zn2+ and OH-1 and the hydrothermal temperature. When the concentrations of the zinc nitrate HMTA were the same as 0.015 M, the length and diameter of the nanowires were 1.97μm and 0.07μm, respectively, and the aspect ratio was 28.1 with the preferred orientation along the<001> direction. XRD and TEM results showed a high crystallinity of the ZnO nanowires. Optical measurement revealed that ZnO nanowires emitted intensive stimulated UV at 376 nm without showing visible emission related to oxygen defects.

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene)(P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowireswere synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside thecomposites were controlled by changing the ultrasonifiaction time. The channel layers were prepared withcomposites by spin-coating at 2000rpm, which was followed by annealing in a vacuum at 100oC for 10 hours.Au/inorganic-organic composite layer/SiO2 structures were fabricated and the mobility, Ion/Ioff ratio, andthreshold voltage were then measured to analyze the electrical characteristics of the channel layer. Comparedwith a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowiredensity inside the composites. The mobility of the P3HT TFT was approximately 10-4cm2/V·s. However, themobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of theP3HT TFT. In terms of the Ion/Ioff ratio, the composite device showed a two-fold increase compared to thatof the P3HT TFT.

Well-aligned Zinc oxide (ZnO) nanowires were synthesized on silicon substrates by a carbothermal evaporation method using a mixture of ZnO and graphite powder with Au thin film was used as a catalyst. The XRD results showed that as-prepared product is the hexagonal wurzite ZnO nanostructure and SEM images demonstrated that ZnO nanowires had been grown along the [0001] direction with hexagonal cross section. As-grown ZnO nanowires were coated with glucose oxidase (GOx) for glucose sensing. Glucose converted into gluconic acid by reaction with GOx and two electrons are generated. They transfer into ZnO nanowires due to the electric force between electrons and the positively charged ZnO nanostructures in PBS. Photoluminescence (PL) spectroscopy was employed for investigating the movements of electrons, and the peak PL intensity increased with the glucose concentration and became saturated when the glucose concentration is above 10 mM. These results demonstrate that ZnO nanostructures have potential applications in biosensors.