본 연구는 나노섬유를 제조하는데 빠르고 효과적인 전기방사법을 이용하여 PVA(Polyvinyl alcohol)와 AgNO3를 혼합하여 제조한 용액을 금속산화물 기반 나노 섬유로 이루어진 투명 전극을 제조하고 그 특성을 분석하였다. PVA/AgNO3 혼합 용액을 전기방사법을 이용하여 유리기판 위에 나노 섬유 구조체 형태로 방사하여 250 ℃에서 2 시간 동안 열처리 과정을 통해 전기 전도성이 향상된 은 나노 섬유 기반 투명 전극을 제조하였다. 제조된 투명전극은 four-point probe 장비를 이용하여 전기적 특성을 분석하였으며, UV - Vis spectrophotometer 를 이용하여 제조된 투명전극의 투과도를 확인하였다. 또한, Scanning Electron Microscopy (SEM)과 Energy Dispersive Spectrometer(EDS)를 통해 은 나노 섬유의 표면 특성과 성분을 확인하였다. 이러한 분석들을 통해, 전기 방사 시간에 따른 면 저항과 투과도의 최적화된 조건을 확인할 수 있었으며, 은 나노 섬유로 이루어진 투명 전극은 전기적, 광학적, 기계적 특성이 우수하여 태양전지, 디스플레이, 터치스크린과 같은 차세대 유연 디스플레이에 적용 가능성을 보여주었다.

We prepared ethylene vinyl alcohol (EVOH)/graphene oxide (GO) membranes by solution casting method. X-ray diffraction analysis showed that GOs were fully exfoliated in the EVOH/GO membrane. The glass transition temperatures of EVOH were increased by adding GOs into EVOH. The melting temperatures of EVOH/GO composites were decreased by adding GOs into EVOH, indicating that GOs may inhibit the crystallization of EVOH during non-isothermal crystallization. However, the equilibrium melting temperatures of EVOH were not changed by adding GOs into EVOH. The oxygen permeability of the EVOH/GO (0.3 wt%) film was reduced to 63% of that of pure EVOH film, with 84% light transmittance at 550 nm. The EVOH/GO membranes exhibited 100 times better (water vapor)/(oxygen) selectivity performance than pure EVOH membrane.

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped SnO2) etc., which have been widely used in LCD,touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realizetransparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additionalprerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical band-gap more than ~3.0eV. In this study, single-phase transparent semiconductor of SrCu2O2, which shows p-type conductivity, havebeen synthesized by 2-step solid state reaction at 950oC under N2 atmosphere, and single-phase SrCu2O2 thin films of p-typeTCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at 500oC, 1%H2/(Ar+H2) atmosphere. 3% H2/(Ar+H2) resulted in formation of second phases. Hall measurements confirmed the p-typenature of the fabricated SrCu2O2 thin films. The electrical conductivity, mobility of carrier and carrier density 5.27×10−2S/cm,2.2cm2/Vs, 1.53×1017/cm3 a room temperature, respectively. Transmittance and optical band-gap of the SrCu2O2 thin filmsrevealed 62% at 550nm and 3.28eV. The electrical and optical properties of the obtained SrCu2O2 thin films deposited by RFmagnetron sputtering were compared with those deposited by PLD and e-beam.

This paper presents a new method for the improvement of color temperature without the change of the driving scheme using transparent dielectric layers with various metal oxides (CeO2, Co3O4, CuO, Fe2O3, MnO2, NiO) in plasma display panels (PDP). In this study, we fabricated ZnO-B2O3-SiO2-Al2O3 glasse with various metal oxides and examined the optical properties of these glasses. As the metal oxides were added to the glasses, the visible transmittances of the dielectric layers decreased and the transmittances in special wavelength regions were reduced at different rates. The change of the transmittance in each wavelength range induced the variation of the visible emission spectra and the change of the color temperature in the PDP. The addition of Co3O4 and CuO slightly decreased the intensity of the blue light, but the intensities of the green and the red light were significantly decreased. Therefore, the color temperature can be improved from 6087K to 7378K and 7057K, respectively.

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO)as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based light-emitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beamevaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers werein excess of 80% throughout the visible region of the spectrum. Specific contact resistances of 3.4×10−4,1.2×10−4, 9.2×0−5, and 3.6×10−5Ω·cm2 for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. Theforward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15V lower andwas increased by 38.9%, respectively, at a forward current of 20mA compared to that of a standard GaN LEDwith an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

투명차폐재를 목적으로 Indium Tin Oxide (ITO) 투광성 박막을 제조하고 전자파 차폐특성에 대해 조사하였다. 박막은 RF magnetron co-sputtering 증착장비를 사용하여 제작하였다. RF 인가전력, Ar 및 O2분압, 기판온도를 변화시키며 전기전도도와 투광성을 겸비한 박막의 조성과 구조에 관한 실험을 진행하였다. 최적의 증착조건은 300˚C의 기판온도, 20sccm의 아르곤 유량, 10sccm의 산소유량, 그리고 In과 Sn의 인가전력이 각각 50W와 30W일 경우였으며, 이때 얻어진 박막은 육안으로 분명할 정도의 투광성을 보였고 5.6×104mho/m의 높은 전기전도도를 나타내었다. 이렇게 제조된 ITO 박막의 전자파 차폐효과를 차폐이론에 의해 분석하였다. 박막의 전기전도도, 두께, skin depth로부터 차폐기구(흡수손실, 반사손실, 다중반사 보정항)에 대해 고찰하였다. 계산된 차폐효과는 26dB의 값을 보여 투광성 차폐재로 ITO 박막의 사용 가능성을 제시할 수 있었다.