돌발성 해충인 매미나방의 방제체계 수립을 위해 시판 유기농업자재 21종에 대한 살충 활성을 실내 검정하였다. 90% 이상의 살충 활성을 보인 유기농업자재 11종을 선발하였으며, 유효성분들을 분석하였다. PLS 제도의 대응하여 본 연구 결과는 돌발성 매미나방의 친환경 방제 및 향후 유기농업자재의 개발에도 활용이 가능할 것으로 생각된다.

Lithium-ion batteries (LIBs) are powerful energy storage devices with several advantages, including high energy density, large voltage window, high cycling stability, and eco-friendliness. However, demand for ultrafast charge/discharge performance is increasing, and many improvements are needed in the electrode which contains the carbon-based active material. Among LIB electrode components, the conductive additive plays an important role, connecting the active materials and enhancing charge transfer within the electrode. This impacts electrical and ionic conductivity, electrical resistance, and the density of the electrode. Therefore, to increase ultrafast cycling performance by enhancing the electrical conductivity and density of the electrode, we complexed Ketjen black and graphene and applied conductive agents. This electrode, with the composite conductive additives, exhibited high electrical conductivity (12.11 S/cm), excellent high-rate performance (28.6 mAh/g at current density of 3,000 mA/g), and great long-term cycling stability at high current density (88.7 % after 500 cycles at current density of 3,000 mA/g). This excellent high-rate performance with cycling stability is attributed to the increased electrical conductivity, due to the increased amount of graphene, which has high intrinsic electrical conductivity, and the high density of the electrode.

Molybdenum disulfide ( MoS2) has been one of the most promising members of transition-metal dichalcogenides materials. Attributed to the excellent electrical performance and special physical properties, MoS2 has been broadly applied in semiconductor devices, such as field effect transistors (FETs). At present, the exploration of further improving the performance of MoS2- based FETs (such as increasing the carrier mobility and scaling) has encountered a bottleneck, and the application of high-κ gate dielectrics has become an effective approach to change this situation. Atomic layer deposition (ALD) enables high-quality integration of MoS2 and high-κ gate dielectrics at the atomic level. In this review, we summarize recent advances in the fabrication of two-dimensional MoS2 FETs using ALD high-κ materials as gate dielectrics. We first briefly discuss the research background of MoS2 FETs. Second, we expound the electrical and other essential properties of high-κ gate dielectrics, which are essential to the performance of MoS2 FETs. Finally, we focus on the advances in fabricating MoS2 FETs with ALD high-κ gate dielectrics on MoS2, as well as the optimized ALD processes. In addition, we also look forward to the development prospect of this field.