In this work, a series of BaTiO3-based ceramic materials, Ba(Al0.5Nb0.5)xTi1-xO3 (x = 0, 0.04, 0.06, 0.08), were synthesized using a standard solid-state reaction technique. X-ray diffraction profiles indicated that the Al+Nb co-doping into BaTiO3 does not change the crystal structure significantly with a doping concentration up to 8 %. The doping ions exist in Al3+ and Nb5+ chemical states, as revealed by X-ray photoelectron spectroscopy. The frequencydependent complex dielectric properties and electric modulus were studied in the temperature range of 100~380 K. A colossal dielectric permittivity (>1.5 × 104) and low dielectric loss (<0.01) were demonstrated at the optimal dopant concentration x = 0.04. The observed dielectric behavior of Ba(Al0.5Nb0.5)xTi1-xO3 ceramics can be attributed to the Universal Dielectric Response. The complex electric modulus spectra indicated the grains exhibited a significant decrease in capacitance and permittivity with increasing co-doping concentration. Our results provide insight into the roles of donor and acceptor co-doping on the properties of BaTiO3-based ceramics, which is important for dielectric and energy storage applications.

In the present investigation we show the effect of Al doping on the length, size, shape, morphology, and sensing property of ZnO nanorods. Effect of Al doping ultimately leads to tuning of electrical and optical properties of ZnO nanorods. Undoped and Al-doped well aligned ZnO nanorods are grown on sputtered ZnO/SiO2/Si (100) pre-grown seed layer substrates by hydrothermal method. The molar ratio of dopant (aluminium nitrate) in the solution, [Al/Zn], is varied from 0.1 % to 3 %. To extract structural and microstructural information we employ field emission scanning electron microscopy and X-ray diffraction techniques. The prepared ZnO nanorods show preferred orientation of ZnO <0001> and are well aligned vertically. The effects of Al doping on the electrical and optical properties are observed by Hall measurement and photoluminescence spectroscopy, respectively, at room temperature. We observe that the diameter and resistivity of the nanorods reach their lowest levels, the carrier concentration becomes high, and emission peak tends to approach the band edge emission of ZnO around 0.5% of Al doping. Sensing behavior of the grown ZnO nanorod samples is tested for H2 gas. The 0.5 mol% Al-doped sample shows highest sensitivity values of ~ 60 % at 250 ˚C and ~ 50 % at 220 ˚C.

UO2-6wt%Gd2O3가연성 독물질 소결체에 미량첨가한 Al 화합물(Al(OH)3, ADS(aluminium disterate), Al(OH)3+ADS)이 소결성 및 미세조직에 미치는 영향을 고찰하고자 하였다. 이를 위하여 Al이 첨가된 UO2-6wt%Gd2O3압분체를 1700˚C, 수소 분위기에서 4시간동안 소결한 후 특성시험을 수행하였다 Al을 첨가한 UO2-6wt%Gd2O3의 소결밀도는 94% T.D.이상이였고, ADS를 이용한 Al 첨가가 개기공도 감소에 상대적으로 크게 기여하였다. 또한 Al을 첨가하면 10μm 이상의 큰 기공과 1μm 이하의 작은 기공은 많이 줄어들었고 첨가된 Al 화합물의 종류와는 무관하게 평균 기공크기는 2-3μm였다. 그리고 Al을 첨가하지 않은 소결체의 결정립은 이중 결정립 형태를 갖는 반면에 Al을 첨가하면 결정립은 균일하였다. 특히, ADS를 첨가한 소결체의 평균 결정립 크기는 4.6μm로 가장크게 증가하였다.