Polyfluorene (PFO) 발광 층과 두 개의 전극으로 이루어진 단순한 구조의 PFO polymer base OLED를 기본으로 강유전성의 BaTiO₃나노입자를 PFO 발광 층 내에 분산시킨 OLED 소자를 제작하여 분산된 강유전체 나노입자의 영향과 동작에 미치는 역할을 알아보았다. 140 nm 두께의 발광 층 내부에 대비 80 nm의 크기를 가지는 강유전성 BaTiO₃입자들은 OLED 동작 중에 인가전압에 의해 대전되어 전기쌍극자를 형성하고, PFO의 발광 층 내로 주입된 전자 및 정공들과 각각 coulomb force에 기인하는 상호작용을 하여 OLED 소자의 전류밀도가 증가하는 결과를 나타내었다. PFO의 질량대비 10 wt% 에 해당하는 소량을 첨가하였을 때에 OLED소자의 문턱전압이 약 2 V 감소하는 개선된 결과를 나타내었다. 또한 유전체가 첨가되지 않은 소자에 비하여 휘도가 약 2 배 증가한 결과를 나타내었다.

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick ZnSnOx with a resistivity of 10Ω·cm, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

본 연구에서는 전하 조절층을 이용하여 녹색 인광 유기발광다이오드의 효율의 향상을 나타냈다. 양극성의 4,4,N,N'-dicarbazolebiphenyl (CBP)를 호스트와 전하 조절층으로 사용하여 발광층 내에서 전하의 이동을 원활하게 할 수 있다. 게다가 전하 조절층의 삽입으로 엑시톤을 효과적으로 발광층 내에 제한하여, 삼중항-삼중항 소멸 현상을 억제할 수 있음을 확인하였다. 발광층의 전체 두께는 유지하고, 전하 조절층의 변화를 준 다섯 개의 소자를 제작하여 최적화된 전하 조절층의 두께를 이용한 Device D는 외부 양자 효율 16.22%와 휘도 효율 55.76 cd/A의 성능을 보였다.

In this study, we fabricated a polymer light emitting diode (PLED) and investigated its electrical and optical characteristics in order to examine the effects of the PFO [poly(9,9-dioctylfluorene-2-7-diyl) end capped with N,N-bis(4-methylphenyl)-4-aniline] concentrations in the emission layer (EML). The PFO polymer was dissolved in toluene ranging from 0.2 to 1.2 wt%, and then spin-coated. To verify the influence of the TPBI [2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]electron transport layer, TPBI small molecules were deposited by thermal evaporation. The current density, luminance, wavelength and current efficiency characteristics of the prepared PLED devices with and without TPBI layer at various PFO concentrations were measured and compared. The luminance and current efficiency of the PLED devices without TPBI layer were increased, from 117 to 553 cd/m2 and from 0.015 to 0.110 cd/A, as the PFO concentration increased from 0.2 to 1.0 wt%. For the PLED devices with TPBI layer, the luminance and current efficiency were 1724 cd/m2 and 0.501 cd/A at 1.0 wt% PFO concentration. The CIE color coordinators of the PLED device with TPBI layer at 1.0 wt% PFO concentration showed a more pure blue color compared with the one without TPBI, and the CIE values varied from (x, y) = (0.21, 0.23) to (x, y) = (0.16, 0.11).

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO)as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based light-emitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beamevaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers werein excess of 80% throughout the visible region of the spectrum. Specific contact resistances of 3.4×10−4,1.2×10−4, 9.2×0−5, and 3.6×10−5Ω·cm2 for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. Theforward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15V lower andwas increased by 38.9%, respectively, at a forward current of 20mA compared to that of a standard GaN LEDwith an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and 200˚C for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/m2 at 11 V for the device when it was annealed at 200˚C for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.

We have fabricated and evaluated newNew high high-efficiency green green-light light-emitting phosphorescent devices with an emission layer of [TCTA/TCTA1/3TAZ2/3/TAZ] : Ir(ppy)3 were fabricated and evaluated, and compared the electroluminescence characteristics of these devices were compared with the conventional phosphorescent devices with emission layers of (TCTA1/3TAZ2/3) : Ir(ppy)3 and (TCTA/TAZ) : Ir(ppy)3. The current density, luminance, and current efficiency of the a device with an emission layer of (80Å-TCTA/90˚Å-TCTA1/3TAZ2/3/130Å-TAZ) : 10%-Ir(ppy)3 were 95 mA/cm2, 25000 cd/m2, and 27 cd/A at an applied voltage of 10 V, respectively. The maximum current efficiency was 52 cd/A under the a luminance value of 400 cd/m2. The peak wavelength and FWHM (FWHM (full width at half maximum) in the electroluminescence spectral were 513 nm and 65 nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de I'Eclairage) chart. Under the a luminance of 15000 cd/m2, the current efficiency of the a device with an emission layer of (80Å-TCTA/90Å-TCTA1/3TAZ2/3/130Å-TAZ) : 10%-Ir(ppy)3 was 34 cd/A, which has beenshowed an improvement of improved 1.7 and 1.4 times compared to those of the devices with emission layers of (300Å-TCTA1/3TAZ2/3) : 10%-Ir(ppy)3 and (100Å-TCTA/200Å-TAZ) : 10%-Ir(ppy)3, respectively.

We have seen the effects of buffer layer in organic light-emitting diodes using poly(N-vinylcarbazole)(PVK). Polymer PVK buffer layer was made using static spin-casting method. Two device structures were made; one is ITO/TPD/Alq3/Al as a reference and the other is ITO/PVK/TPD/Alq3/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage characteristics, luminance-voltage characteristics and luminous efficiency were measured with a variation of spin-casting speeds. We have obtained an improvement of luminous efficiency by a factor of two and half when the PVK buffer layer is used.

We have seen the effects of buffer layer in organic light-emitting diodes(OLEDs) using poly(N-vinylcarbazole)(PVK) depending on a concentration of PVK. Polymer PVK buffer layer was made using spin casting technique. Two device structures were fabricated; one is ITO/TPD/Alq3/Al as a reference, and the other is ITO/PVK/TPD/Alq3/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage-luminance characteristics and an external quantum efficiency were measured with a variation of spin-casting rpm speeds and PVK concentration. We have obtained an improvement of external quantum efficiency by a factor of four when the PVK concentration is 0.1wt% is used. The improvement of efficiency is expected due to a function of hole-blocking of PVK in OLEDs.