This study aimed to grow single crystals with low dislocation density using a heat exchange method using room temperature water, and investigated the effect of the structure of the heat exchanger under the crucible on the defects and dislocation density of the single crystals and the shape of the solid-liquid interface of the crystals, and obtained the following conclusions. The dislocation density of sapphire single crystal grown at 2,200℃ for 30 min and a growth rate of 0.2℃/min was 0.92x103pcs/㎠. Mo guard was used to stabilize the solid-liquid interface grown from seeds, and sapphire single crystals with a diameter of 130㎜ and a height of 75㎜ were grown.

본 연구는 코팅 방법을 활용한 단결정 양극 소재 연구로서 Ni-rich계 다결정 양극 소재로 부터 단결정 양극 소재를 합 성하여 사이클 구동 시 양극 소재의 안정성을 향상시키고자 한다. 양극 소재에 LixCoO2와 LixSnO3 를 각각 코팅하여 이차입자 내부 혹은 외부에 코팅층이 형성된 양극 소재를 합성한 후 이를 소결하여 단결정 형성에 대한 영향을 비교 하였다. 입자 외부에 LixSnO3가 코팅되어 열처리 된 Ni0.8Co0.1Mn0.1O2(NCM811)의 경우 코팅 처리 없이 열처리된 양극 소재 보다 개선된 수명특성을 보였으나, 단결정화가 이뤄지지 않았다. 입자 내부에 LixCoO2 코팅층이 형성된 NCM811 을 열처리 한 결과 이차입자 내부에 형성된 Co 코팅층이 결정화되어 50회 사이클 후 기준 단결정 양극 소재의 방전용 량인 117.34 mAh·g-1 대비 129.11 mAh·g-1의 높은 방전용량을 나타내었고, 형상제어를 통해 이성적인 단결정화가 이뤄 졌다. 본 연구는 다결정체인 Ni-rich 양극소재의 단결정화에 대한 유요한 통찰력을 제공할 것으로 예상한다.

Solid state grain growth (SSCG) is a method of growing large single crystals from seed single crystals by abnormal grain growth in a small-grained matrix. During grain growth, pores are often trapped in the matrix and remain in single crystals. Aerosol deposition (AD) is a method of manufacturing films with almost full density from nano grains by causing high energy collision between substrates and ceramic powders. AD and SSCG are used to grow single crystals with few pores. BaTiO3 films are coated on (100) SrTiO3 seeds by AD. To generate grain growth, BaTiO3 films are heated to 1,300 oC and held for 10 h, and entire films are grown as single crystals. The condition of grain growth driving force is ΔGmax < ΔGc ≤ ΔGseed. On the other hand, the condition of grain growth driving force in BaTiO3 AD films heat-treated at 1,100 and 1,200 oC is ΔGc < ΔGmax, and single crystals are not grown.

Single crystals, which have complexed composition, are fabricated by solid state grain growth. However, it is hard to achieve stable properties in a single crystal due to trapped pores. Aerosol deposition (AD) is suitable for fabrication of single crystals with stable properties because this process can make a high density coating layer. Because of their unique features (nano sized grains, stress inner site), it is hard to fabricate single crystals, and so studies of grain growth behavior of AD film are essential. In this study, a BaTiO3 coating layer with ~ 9 μm thickness is fabricated using an aerosol deposition method on (100) and (110) cut SrTiO3 single crystal substrates, which are adopted as seeds for grain growth. Each specimen is heat-treated at various conditions (900, 1,100, and 1,300℃ for 5 h). BaTiO3 layer shows different growth behavior and X-ray diffraction depending on cutting direction of SrTiO3 seed. Rectangular pillars at SrTiO3 (100) and laminating thin plates at SrTiO3 (110), respectively, are observed.

Surface plasmon resonance is the resonant oscillation of conduction electrons at the interface between negative and positive permittivity material stimulated by incident light. In particular, when light transmits through the metallic microhole structures, it shows an increased intensity of light. Thus, it is used to increase the efficiency of devices such as LEDs, solar cells, and sensors. There are various methods to make micro-hole structures. In this experiment, micro holes are formed using a wet chemical etching method, which is inexpensive and can be mass processed. The shape of the holes depends on crystal facets, temperature, the concentration of the etchant solution, and etching time. We select a GaAs(100) single crystal wafer in this experiment and satisfactory results are obtained under the ratio of etchant solution with H2SO4:H2O2:H2O = 1:5:5. The morphology of micro holes according to the temperature and time is observed using field emission - scanning electron microscopy (FE-SEM). The etching mechanism at the corners and sidewalls is explained through the configuration of atoms.

Grain-growth behavior in the 95Na1/2Bi1/2TiO3-5BaTiO3 (mole fraction, NBT-5BT) system has been investigated with the addition of Na2CO3. When Na2CO3 is added to NBT-5BT, the growth rate is higher than desired and grains are already impinging each other during the initial stage of sintering. The grain size decreases as the sintering temperature increases. With the addition of Na2CO3, a liquid phase infiltrates the interfaces between grains during sintering. The interface structure can be changed to be more faceted and the interface migration rate can increase due to fast material transport through the liquid phase. As the sintering temperature increases, the impingement of abnormal grains increases because the number of abnormal grains increases. Therefore, the average grain size of abnormal grains can be decreased as the temperature increases. The phenomenon can provide evidence that grain coarsening in NBT-5BT with addition of Na2CO3 is governed by the growth of facet planes, which would occur via mixed control.

A strain-gradient crystal plasticity finite element method(SGCP-FEM) was utilized to simulate the compressive deformation behaviors of single-slip, (111)[101], oriented FCC single-crystal micro-pillars with two different slip-plane inclination angles, 36.3o and 48.7o, and the simulation results were compared with those from conventional crystal plasticity finite element method(CP-FEM) simulations. For the low slip-plane inclination angle, a macroscopic diagonal shear band formed along the primary slip direction in both the CP- and SGCP-FEM simulations. However, this shear deformation was limited in the SGCP-FEM, mainly due to the increased slip resistance caused by local strain gradients, which also resulted in strain hardening in the simulated flow curves. The development of a secondly active slip system was altered in the SGCP-FEM, compared to the CP-FEM, for the low slip-plane inclination angle. The shear deformation controlled by the SGCP-FEM reduced the overall crystal rotation of the micro-pillar and limited the evolution of the primary slip system, even at 10% compression.

목 적: Ⅱ-Ⅲ2-Ⅵ4형 반도체 가운데 고용체 화합물에 대한 연구의 하나로 Ⅵ족인 S, Se를 상호 교환하여 성장시킨 ZnAl2Se3.6S0.4 고용체의 구조 및 광 발광 메카니즘을 규명하였고, 이로부터 광학적 energy band gap의 온도의존성과 기초적 열역학 함수를 추정고자 한다. 방 법: ZnAl2Se3.6S0.4 단결정은 수송매체로서 iodine을 이용한 화학수송법(CTR)으로 단결정을 성장시켰 다. 단결정을 성장시키기 위하여 시료 출발측을 950 ℃, 성장측을 850 ℃로 하여 7일간 성장시켰다. 기초 흡 수단 부근에서 에너지 띠 간격의 온도의존성을 구하기 위하여 저온장치가 부착된 UV-VIS-NIR spectrophotometer를 사용하여 광흡수 스펙트럼을 측정하였다. 광발광 특성은 광흡수 특성 측정에 사용하 였던 측정용 시편을 cryogenic system 의 cold finger 에 부착시키고, 여기 광원으로 325 ㎚의 He-Cd laser 를 사용하였으며, double-grating monochromator, data-mate control system, cryogenic system, PM tube 등으로 구성된 측정 system을 사용하여 측정하였다. 결과 및 고찰: ZnAl2Se3.6S0.4 단결정의 에너지 띠 간격과 온도의존성을 구하기 위하여 이들 단결정의 기 초 흡수단 영역인 320 ～ 420㎚ 파장영역과 13K ～ 289K 온도영역에서 광흡수 스펙트럼을 측정하였다. Varshni가 제안한 에너지 띠 간격의 온도의존성 특성에 대한 실험식에 잘 일치하였다. 측정된 energy gap(Eg)으로부터 열역학적 함수 물리량을 추정할 수 있었다. 또한 13K에서 측정한 광발광 스펙트럼에서 보 면 427㎚(2.904 )영역에서 비교적 넓고 세기가 강한 청색 발광 피크와 468㎚(2.648 )영역에서 세기가 약한 청색 발광 피크를 관측할 수 있었다. 결 론: ZnAl2Se3.6S0.4 단결정의 결정구조는 defect chacopyrite 구조였으며, 격자 상수는 a= 5.5563Å, c= 10.8324Å이었다. 또한 찌그러짐 인자값은 0.0504 이었다. 광학적 에너지 띠 간격의 온도 의존성을 규명하 였고, 이 때 Eg(0)=3.538(eV), α=2.02×10-3(eV/K), β=502.19(K)로 주어졌다. Energy band gap의 온도의 존성으로부터 entropy(SCV), heat capacity(CCV), enthalpy(HCV) 값을 추정 할 수 있었다. ZnAl2Se3.6S0.4 결 정의 광발광 특성은 비교적 넓고 세기가 강한 청색 발광 피크와 세기가 약한 청색 발광 피크를 관측할 수 있었 다. 이들 발광 전이기구는 두개의 주개 준위(SD1, DD1)와 한 개의 받개 준위(DA1)사이의 재결합에 의한 발광 메카니즘으로 설명된다.

The γ/γ´ two-phases, commonly known as a eutectic structure, are observed in the γ interdendritic region of a Nibase superalloy. However, the growth behavior of the γ/γ´ two-phases, whether it is of eutectic or peritectic nature, has not been decidedly established. Directional solidifications were, thus, performed with the planar interface at a low growth rate of 0.5 μm/s in order to promote macro segregation. Directional solidification started with the γ planar interface and the γ´ phase nucleated on the γ planar interface at the solidification fraction of 0.75. The γ/γ´ two-phases showed the γ´ rod structure as major phase and the γ minor phase between γ´ rods, and the volume fraction of the γ phase changed continuously with an increasing solidification fraction. The two-phase γ/γ´ is seen as the coupled peritectic.

The optical film for light luminance improvement of back light unit that is used in light emitting diode/liquid crystal display and retro-reflective film is used as luminous sign consist of square and triangular pyramid structure pattern based on V-shape micro prism pattern. In this study, we analyzed machining characteristics of Cu-plated flat mold by shaping with diamond tool. First, cutting conditions were optimized as V-groove machining for the experiment of micro prism structure mold machining with prism pattern shape, cutting force and roughness. Second, the micro prism structure such as square and triangular pyramid pattern were machined by cross machining method with optimizing cutting conditions. Variation of Burr and chip shape were discussed by material properties and machining method.

Exceptional progress has been made with chemical vapor deposition (CVD) of graphene in the past few years. Not only has good monolayer growth of graphene been achieved, but large-area synthesis of graphene sheets has been successful too. However, the polycrystalline nature of CVD graphene is hampering further progress as graphene property degrades due to presence of grain boundaries. This review will cover factors that affect nucleation of graphene and how other scientists sought to obtain large graphene domains. In addition, the limitation of the current research trend will be touched upon as well.

A stoichiometric mixture of evaporating materials for ZnAl2Se4 single-crystal thin films was prepared in a horizontalelectric furnace. These ZnAl2Se4 polycrystals had a defect chalcopyrite structure, and its lattice constants were a0=5.5563Åand c0=10.8897Å.To obtain a single-crystal thin film, mixed ZnAl2Se4 crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were 620oCand 400oC, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ω-2θ scans. The carrier density and mobility of the ZnAl2Se4 single-crystal thin filmwere 8.23×1016cm−3 and 287m2/vs at 293K, respectively. To identify the band gap energy, the optical absorption spectra ofthe ZnAl2Se4 single-crystal thin film was investigated in the temperature region of 10-293K. The temperature dependence ofthe direct optical energy gap is well presented by Varshni's relation: Eg(T)=Eg(0)−(αT2/T+β). The constants of Varshni'sequation had the values of Eg(0)=3.5269eV, α=2.03×10−3eV/K and β=501.9K for the ZnAl2Se4 single-crystal thin film.The crystal field and the spin-orbit splitting energies for the valence band of the ZnAl2Se4 were estimated to be 109.5meVand 124.6meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicatethat splitting of the ∆so definitely exists in the Γ5 states of the valence band of the ZnAl2Se4/GaAs epilayer. The threephotocurrent peaks observed at 10K are ascribed to the A1-, B1-exciton for n=1 and C21-exciton peaks for n=21.

Morphological control on hydroxyapatite crystals has attractive prospects in research to clarify the effects of crystal planes on biological performance. Hydrothermal processing is known as a typical type of processing for fabricating well-grown crystals with unique morphology. The purpose of the present study is to examine the feasibility of well-crystallized crystals with oriented structures through hydrothermal treatment of calcite. A single crystal of calcite was applied to hydrothermal treatment in a phosphate solution at 160˚C. Rod-shaped hydroxyapatite crystals with micrometer-size were formed on the 100 face of calcite after treatment, while nanometer-sized hydroxyapatite crystals were formed on the (111). The hydroxyapatite crystals formed on each plane were not morphologically changed with increasing treatment periods. An oriented structure of rod-shaped hydroxyapatite was constructed after hydrothermal treatment of 100 planes on the calcite single, while such orientation was not observed on the (111) plane after the treatment. The layer of hydroxyapatite formed on the 100 plane was thicker than that of the (111) plane. The 100 plane of calcite shows a higher reactivity than that of the (111) plane, which results in rapid crystal growth of hydroxyapatite. The difference in the morphology of the formed hydroxyapatite was governed by the reactivity of each crystal plane exposed to the surrounding solution.

Yttria stabilized zirconia (Y-CSZ) single crystals show plastic deformation at high temperatures byactivating dislocations. The effect of strain rate on the plastic behavior of this crystal was studied. As increasingstrain rate from ε=1.04×10-5sec-1 to 2.08×10-5sec-1 the yield drop was suppressed and resulted in higherYoung's modulus and yield stress. Dislocation structures of the strained crystals were analyzed using atransmission electron microscope to elucidate the plastic behavior of these crystals. In the early stage of plasticdeformation, dislocation dipoles and prismatic dislocation loops were formed in both samples. However,dislocation density was increased by increasing strain rate. Strong sessile dislocations were observed in thesample with higher strain rate, which may cause the higher work hardening.

Yttria stabilized zirconia single crystals show plastic deformation at high temperatures by activating dislocations. The plastic deformation is highly dependent on crystallographic orientation. When the samples were deformed at different orientations, stress-strain curves changed by operating different slip systems. The strength of samples was also highly dependent on crystallographic orientation, i.e., samples without yield drop showed higher strength than that of samples exhibiting yield drop. The slip systems in the sample deformed along<112>,<111> and<001> agreed with the theoretical values of the plastic deformation, following Schmid's Law. Dislocations play a major role in the plastic deformation of this crystal. At the early stages of plastic deformation, all samples exhibited dislocation dipoles and, in the later stages, dislocation interactions occurred by forming nodes, tangles and networks. In this study, three different orientations, [11-2], [111] and [001] were employed to explain the plastic deformation behavior. A microstructural analysis was performed to elucidate the mechanism of the plastic behavior of this crystal.

Directional solidification experiments were carried out at 1-300 μm/sec solidification rates in the single crystal superalloy, CMSX 10. The solid/liquid interface morphology changed from planar to dendritic, and the dendrite spacing became finer as the solidification rate increased. The pool size of the γ/γ' eutectic, formed between dendrites, reduced as the solidification rate increased. The phase formation temperatures, such as the solidus, liquidus and eutectic, were estimated by differential scanning calorimetry (DSC) analysis. The morphology of the γ/γ' phase, known to be eutectic, showed γ' cells with a γ intercellular network, and this γ/γ' was composed of coarse and fine γ/γ' regions. In this study, it is suggested that the γ/γ' phase was a coupled peritectic.The solidification procedure of the γ/γ' between dendrites is also discussed.

Single crystal ZnIn2S4 layers were grown on thoroughly etched semi-insulating GaAs(100) substrateat 450oC with hot wall epitaxy (HWE) system by evaporating ZnIn2S4 source at 610oC. The crystalline structureof the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray rockingcurve (DCRC). The temperature dependence of the energy band gap of the ZnIn2S4 obtained from theabsorption spectra was well described by the Varshni’s relation, Eg(T)=2.9514eV-(7.24×10−4eV/K)T2/(T＋489K). After the as-grown ZnIn2S4 single crystal thin films were annealed in Zn-, S-, and In-atmospheres, theorigin of point defects of ZnIn2S4 single crystal thin films has been investigated by the photoluminescence (PL)at 10K. The native defects of VZn, VS, Znint, and Sint obtained by PL measurements were classified as a donorsor acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted ZnIn2S4 singlecrystal thin films to an optical p-type. Also, we confirmed that In in ZnIn2S4/GaAs did not form the nativedefects because In in ZnIn2S4 single crystal thin films existed in the form of stable bonds.

The wetting behavior of molten Fe on α-Al2O3 single crystals with three different crystallographic orientations, R(01ar12), A(11ar20), and C(0001), was investigated using the sessile drop method under a 10%H2-Ar atmosphere at 1873 K. It was found that the differences in the contact angle of the three differently oriented α-Al2O3 single crystals were not significant (within 5˚, which corresponded to the changes in the work of adhesion of 157mJ/m2) due to the surface reconstruction.