Due to their unique properties, tungsten borides are good candidates for the industrial applications where certain features such as high hardness, chemical inertness, resistance to high temperatures, thermal shock and corrosion. In this study, conditions were investigated for producing tungsten boride powder from tungsten oxide(WO3) by self-propagating high-temperature synthesis (SHS) followed by HCl leaching techniques. In the first stage of the study, the exothermicity of the WO3-Mg reaction was investigated by computer simulation. Based on the simulation experimental study was conducted and the SHS products consisting of borides and other compounds were obtained starting with different initial molar ratios of WO3, Mg and B2O3. It was found that WO3, Mg and B2O3 reaction system produced high combustion temperature and radical reaction so that diffusion between W and B was not properly occurred. Addition of NaCl and replacement of B2O3 with B successfully solved the diffusion problem. From the optimum condition tungsten boride(W2B and WB) powders which has 0.1~0.9 um particle size were synthesized.

Preparation processing of sintered silicon nitride ceramics was emphatically investigated with Self-Propagating High-Temperature Synthesis (SHS) of silicon nitride prepared by ourselves as raw material. The results indicate that good sinter ability can be obtained with cheaply SHS of silicon nitride preparing silicon nitride materials. The cost of silicon nitride materials will be lowered.

This study for preparation of aluminum nitride (AlN) with high purity was carried out by self-propagating high-temperature synthesis method in two different systems, Al-N and Al-N-AlN, with the change of nitrogen gas pressure and dilution factor. On the occasion of Al-N system, unreacted aluminum was detected in the product in spite of high nitrogen pressure, 10 MPa, This may be caused by obstructing nitrogen gas flow to inner part of molten and agglomerate of aluminum, formed in pre-heating zone. In Al-N-AlN system, AlN with a purity of 95% or ever can be prepared in the condition of f 0.5, PN2 1 MPa, and the purity can be elevated to 98% over in the condition of f = 0.7 and PN2 = 10 MPa

ZrO2, B2O3 및 AI을 사용하여 SHS법에 의한 붕화지르코늄을 합성을 하고 산화철과 알루미늄 분말의 첨가가 합성물의 치밀화에 미치는 영향에 대하여 검토하였다. 합성물중에 존재하는 결정상은 대부분이 ZrB2와 α-AI2O3상이었다. 산화붕소와 알루미늄의 몰비가 1.0:3.3이상일 때 합성물의 치밀화는 크게 증가하였고, ZrB2 입자도α-AI2O3용융상과 더불어 조대하였다. 산화철 1목에 대하여 알루미늄을 1-3몰을 첨가한 것과 산화철 1.5몰에 대하여 알루미늄을 3몰 첨가시 α-AI2O3를 중심으로하는 슬라그상으로부터 용융상의 분이가 가능하였고, 이들 용융상에 존재하는 결정상은 ZrB2이외에 Fe, Fe2B, Zr2Fe상이었다. 용융상의 상대밀도는 산화철 1몰에 대하여 알루미늄을 1몰 첨가시 83.2%인 반면에 그 이상의 첨가량에 대해서는 치밀화는 크게 증가하여 알루미늄을 3몰 첨가한 경우 상대밀도는 93.7%로서 최대를 나타내었다.

자체연소반응법에 의하여 탄화붕소(B4C)를 합성함에 있어서 자체적으로는 반응이 이루어지지 않아서 간접점화법인 화학로법(Chemical Furnace)으로 합성을 하였으며, 성형압력과 몰비를 변수로 하여 연소온도 및 연소속도의 변화를 측정하였다. 성형밀도가 이론밀도의 70%에서 연소온도와 연소속도가 가장 높았으며, 몰비에 대한 영향은 표준비였을 때 연소온도와 연소속도가 가장 높았다. 그리고 성형밀도에 따른 입자의 크기변화는 성형밀도가 높을수록 입자의 크기는 작아졌으며 따라서 비표면적은 커졌다.