InP quantum dots (QDs) have attracted researchers’ interest due to their applicability in quantum dot light-emitting displays (QLED) or biomarkers for detecting cancers or viruses. The surface or interface control of InP QD core/ shell has substantially increased quantum efficiency, with a quantum yield of 100% reached by introducing HF to inhibit oxide generation. In this study, we focused on the control of bandgap energy of quantum dots by changing the Zn/(In+Zn) ratio in the In(Zn)P core. Zinc incorporation can change the photoluminescent light colors of green, yellow, orange, and red. Diluting a solution of as-synthesized QDs by more than 100 times did not show any quenching effects by the Förster resonance energy transfer phenomenon between neighboring QDs.

Cu-doped ZnSe quantum dots were successfully synthesized in an aqueous solution using an internal doping method. The effects of ligand type, CuSe synthesis temperature, and heating time on Cu-doped ZnSe synthesis were systematically investigated. Of MPA, GSH, TGA, and NAC used as ligands, MPA was the optimal ligand as determined by PL spectrum analysis. In addition, the emission wavelength was found to depend on the synthesis temperature of the internal doping core of CuSe. As the temperature increased, the doping of Cu2+ was enhanced, and the emission wavelength band was redshifted; accordingly, the emission peaks moved from blue to green (up to 550 nm). Thus, the synthesis of Cu:ZnSe using internal doping in aqueous solutions is a potential method for ecomanufacturing of colortuned ZnSe quantum dots for display applications.

광전기화학 성능을 향상시키기 위해 각 ZnO, ZnSe과 g-C3N4 소재의 장점을 살리도록 3성분계 적층 구조를 디자 인했다. 용액공정으로 FTO 기판위에서 ZnO 나노로드 어레이가 성장하도록 한 후 ZnO표면에 Se을 부착시켜 ZnO표면에 서 ZnSe층이 형성 되도록 이온 치환법을 도입하였다. ZnO/ZnSe 나노로드 위에 g-C3N4 층을 스핀코팅 한 후 각 층이 화 학적 접합이 되도록 질소 분위기 하에서 열처리를 하였다. AM 1.5G, 0.5 V 외부전압하에서 각 적층구조별로 광전기화학 적 전류밀도를 측정하였고 비교 결과 ZnO/ZnSe/g-C3N4 나노로드가 ZnO 및 ZnO/ZnSe 나노로드에 비하여 보다 높은 광 전류 밀도가 측정되었다. 수직 정렬된 ZnO 육각 프리즘형태는 큰 비표면적과 축 방향을 따라 전자 흐름을 원활히 하고, ZnSe 층은 비표면적과 광흡수 범위를 더욱 넗히는 효과를 가져왔다. 이로 인하여 ZnO/ZnSe/g-C3N4 삼원 접합 전극의 향상된 성능은 가시광선 흡수범위 확장, 전하 분리 강화 및 전자 전도도 향상으로 인한 시너지 효과에 기인되는 것으로 판단된다.

In this study, a mixed resin containing Bis-GMA was developed to produce a light-emitting sign using quantum dots. As a result of measuring the viscosity, color coordinates change, and luminance of the mixed resin, the following conclusions were obtained. The viscosity of the mixed resin decreased as the content of the diluent increased, and viscosity values ​​ranged from 3,627 to 1,349cps showed as a result. The viscosity of the mixed resin decreased as the temperature increased, and the viscosity showed a value of 5,156 to 1,132cps. For the optical properties of InP/GaP/ZnSe/ZnS quantum dots, the absolute quantum efficiency was 91% at 522nm and 90% at 618nm when the gallium was 0.01%. The luminance of the light-emitting sign using the resin mixed with quantum dots was showed 142.6cd/m2 in white and 104.2cd/m2 in the red region.

Zinc selenide (ZnSe) nanoparticles were synthesized in aqueous solution using glutathione (GSH) as a ligand. The influence of the ligand content, reaction temperature, and hydroxyl ion concentration (pH) on the fabrication of the ZnSe particles was investigated. The optical properties of the synthesized ZnSe particles were characterized using various analytical techniques. The nanoparticles absorbed UV-vis light in the range of 350-400 nm, which is shorter than the absorption wavelength of bulk ZnSe particles (460 nm). The lowest ligand concentration for achieving good light absorption and emission properties was 0.6 mmol. The reaction temperature had an impact on the emission properties; photoluminescence spectroscopic analysis showed that the photo-discharge characteristics were greatly enhanced at high temperatures. These discharge characteristics were also affected by the hydroxyl ion concentration in solution; at pH 13, sound emission characteristics were observed, even at a low temperature of 25oC. The manufactured nanoparticles showed excellent light absorption and emission properties, suggesting the possibility of fabricating ZnSe QDs in aqueous solutions at low temperatures.

Nano-sized ZnSe particles are successfully synthesized in an aqueous solution at room temperature using sodium borohydride (NaBH4) and thioglycolic acid (TGA) as the reducing agent and stabilizer, respectively. The effects of the mass ratio of the reducing agent to Se, stabilizer concentration, and stirring time on the synthesis of the ZnSe nanoparticles are evaluated. The light absorption/emission properties of the synthesized nanoparticles are characterized using ultraviolet-visible (UV-vis) spectroscopy, photoluminescence (PL) spectroscopy, and particle size analyzer (PSA) techniques. At least one mass ratio (NaBH4/Se) of the reducing agent should be added to produce ZnSe nanoparticles finer than 10 nm and to absorb UV–vis light shorter than the ZnSe bulk absorption wavelength of 460 nm. As the ratio of the reducing agent increases, the absorption wavelengths in the UV-vis curves are blue-shifted. Stirring in the atmosphere acts as a deterrent to the reduction reaction and formation of nanoparticles, but if not stirred in the atmosphere, the result is on par with synthesis in a nitrogen atmosphere. The stabilizer, TGA, has an impact on the Zn precursor synthesis. The fabricated nanoparticles exhibit excellent photo-absorption/discharge characteristics, suggesting that ZnSe nanoparticles can be alloyed without the need for organic solutions or high-temperature environments.

Nano-sized Zinc selenide (ZnSe) powder was successfully synthesized using Zn and Se precursors in a hydrothermal process. Temperature for the synthesis was varied from 95 oC to 180 oC to evaluate its influence on the microstructural properties of the synthetic particles. ZnSe powder thus fabricated was characterized using various analytical tools such as SEM, XRD, TEM and UV-Vis methods. Two types of ZnSe particles, that is, the precipitated particle and the colloidal particles, were identified in the analysis. The precipitated particles were around 100 nm in average size, whereas the average size of the colloidal particles was around 20 nm. The precipitated particles made at 150 oC and 180 oC were found to be a single phase of ZnSe; however, an inhomogeneous phase was obtained at the lower synthesis temperature of 95 oC, suggesting that the temperature for the synthesis should be over 100 oC. The precipitated particles were inactive in the UV-Vis absorption investigation, whereas the colloidal particles showed that absorptions occurred at 380 nm in the UV-Vis spectrum.

Quantum dots (QDs) are capable of controlling the typical emission and absorption wavelengths because of the bandgap widening effect of nanometer-sized particles. These phosphor particles have been used in optical devices, photovoltaic devices, advanced display devices, and several biomedical complexes. In this study, we synthesize ZnSe QDs with controlled surface defects by a heating-up method. The optical properties of the synthesized particles are analyzed using UV-visible and photoluminescence (PL) measurements. Calculations indicate nearly monodisperse particles with a size of about 5.1 nm at 260℃ (full width at half maximum = 27.7 nm). Furthermore, the study results confirm that successful doping is achieved by adding Eu3+ preparing the growth phase of the ZnSe:Eu QDs when heating-up method. Further, we investigate the correlation between the surface defects and the luminescent properties of the QDs.

Cu2ZnSn(S,Se)4 material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in Cu(In,Ga)Se2 solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and SnSe2 were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/SnSe2/ZnSe stack provided a uniform film with larger grains compared to that with Cu2Se/SnSe2/ZnSe stack. Also, voids were not observed at the Cu2ZnSnSe4/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a SnSe2 environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to Cu2Se top-layer stack.

MBS에 의해(001)GaAs기판 위에 성장된 Zn1-xCoxSe(x=1.0, 7.4, 9.5 %)반도체 박막과 (ZnSe/FeSe)반도체 초격자 박막의 미세구조를 투과전자현미경을 이용하여 연구하였다. Zn1-xCoxSe 박막 시편의 경우, 박막과 기판 사이의 격자 불일치때문에 a/2<110>형태의 버거즈 벡터를 가지는 부정합 전위를 관찰하였다. 모든 Zn1-xCoxSe 박막과 기판의 계면은 뚜렷이 구별되었고, 계면에서 산화물이나 이물질이 존재하지 않았다. 또한, (ZnSe/FeSe)초격자를 성장시키기 전에 GaAs기판 위에 ZnSe바닥층을 넣음으로써 고품질의 (ZnSe/FeSe)초격자를 얻었다. (ZnSe/FeSe)초격자에 있는 FeSe는 섬아연광 결정구조로 존재하였다.