To improve ferroelectric properties of PZT, many studies have attempted to fabricate dense PZT films. The AD process has an advantage for forming dense ceramic films at room temperature without any additional heat treatment in low vacuum. Thick films coated by AD have a higher dielectric breakdown strength due to their higher density than those coated using conventional methods. To improve the breakdown strength, glass (SiO2-Al2O3-Y2O3, SAY) is mixed with PZT powder at various volume ratios (PZT-xSAY, x = 0, 5, 10 vol%) and coating films are produced on silicon wafers by AD method. Depending on the ratio of PZT to glass, dielectric breakdown strength and energy storage efficiency characteristics change. Mechanical impact in the AD process makes the SAY glass more viscous and fills the film densely. Compared to pure PZT film, PZT-SAY film shows an 87.5% increase in breakdown strength and a 35.3 % increase in energy storage efficiency.

Solid state grain growth (SSCG) is a method of growing large single crystals from seed single crystals by abnormal grain growth in a small-grained matrix. During grain growth, pores are often trapped in the matrix and remain in single crystals. Aerosol deposition (AD) is a method of manufacturing films with almost full density from nano grains by causing high energy collision between substrates and ceramic powders. AD and SSCG are used to grow single crystals with few pores. BaTiO3 films are coated on (100) SrTiO3 seeds by AD. To generate grain growth, BaTiO3 films are heated to 1,300 oC and held for 10 h, and entire films are grown as single crystals. The condition of grain growth driving force is ΔGmax < ΔGc ≤ ΔGseed. On the other hand, the condition of grain growth driving force in BaTiO3 AD films heat-treated at 1,100 and 1,200 oC is ΔGc < ΔGmax, and single crystals are not grown.

This study examines paraelectric Bi1.5Zn1.0Nb1.5O7 (BZN), which has no hysteresis and high dielectric strength, for energy density capacitor applications. To increase the breakdown dielectric strength of the BZN film further, poly(vinylidene fluoride) BZN-PVDF composite film is fabricated by aerosol deposition. The volume ratio of each composition is calculated using dielectric constant of each composition, and we find that it was 12:88 vol% (BZN:PVDF). To modulate the structure and dielectric properties of the ferroelectric polymer PVDF, the composite film is heat-treated at 200 oC for 5 and 30 minutes following quenching. The amount of α-phase in the PVDF increases with an increasing annealing time, which in turn decreases the dielectric constant and dielectric loss. The breakdown dielectric strength of the BZN film increases by mixing PVDF. However, the breakdown field decreases with an increasing annealing time. The BZN-PVDF composite film has the energy density of 4.9 J/cm3, which is larger than that of the pure BZN film of 3.6 J/cm3.

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such assensors and temperature compensation devices. NTC thermistor thick films of Ni1+xMn2-xO4+δ (x=0.05, 0, −0.05) werefabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T)characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between 25oC and 85oCwithout heat treatment. When the film was annealed at 600oC 1h, the resistivity of the film gradually decreased due tocrystallization and grain growth. The resistivity and the activation energy of films annealed at 600oC for 1 h were 5.203, 5.95,and 4.772KΩ·cm and 351, 326, and 299meV for Ni0.95Mn2.05O4+δ, NiMn2O4, and Ni1.05Mn1.95O4+δ, respectively. The annealingprocess induced insulating Mn2O3 in the Ni deficient Ni0.95Mn2.05O4+δ composition resulting in large resistivity and activationenergy. Meanwhile, excess Ni in Ni1.05Mn1.95O4+δ suppressed the abnormal grain growth and changed Mn3+ to Mn4+, givinglower resistivity and activation energy.

The 21st Century Frontier Program, which is one of the R&D programs funded by Korean government, was launched in 1999 to elevate the status of Korean science and engineering capabilities to the advanced nation in the strategic fields. Currently, 23 different fields of science and engineering programs are carried out by researchers in institutes, universities and industries. Center for Advanced Materials Processing (CAMP) was formulated in 2001 to develop the advanced materials as well as to improve the parts manufacturing process. The main role of CAMP is proposing and forecasting the long term vision in Materials Processing Technology and also supporting the project teams for their best performance in R&D. The CAMP program consists of 5 research areas such as, Multi-layer Ceramic Electronic Parts, Powder Formed Precision Parts, 3 Dimensional Polymer Based Composites, Functional Metal Sheets, Parts Integration Technology. An introduction of R & D activities at CAMP, specially focusing on powder metallurgy, wil be presented.