Co and Ni as catalysts in SnO2 sensors to improve the sensitivity for CH4 gas and CH3CH2CH3 gas were coated by a solution reduction method. SnO2 thick films were prepared by a screen-printing method onto Al2O3 substrates with an electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a chamber. The structural properties of SnO2 with a rutile structure investigated by XRD showed a (110) dominant SnO2 peak. The particle size of the SnO2:Ni powders with Ni at 6 wt% was about 0.1 μm. The SnO2 particles were found to contain many pores according to a SEM analysis. The sensitivity of SnO2-based sensors was measured for 5 ppm of CH4 gas and CH3CH2CH3 gas at room temperature by comparing the resistance in air to that in the target gases. The results showed that the best sensitivity of SnO2:Ni and SnO2:Co sensors for CH4 gas and CH3CH2CH3 gas at room temperature was observed in SnO2:Ni sensors coated with 6 wt% Ni. The SnO2:Ni gas sensors showed good selectivity to CH4 gas. The response time and recovery time of the SnO2:Ni gas sensors for the CH4 and CH3CH2CH3 gases were 20 seconds and 9 seconds, respectively.

Nano-sized SnO2 thick films were prepared by a screen-printing method onto Al2O3 substrates. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box as a function of the detection gas. The nano-sized SnO2 thick film sensors were treated in a N2 atmosphere. The structural properties of the nano SnO2with a rutile structure according to XRD showed a (110) dominant SnO2 peak. The particle size of SnO2:Ni nano powders at Ni 8 wt% was about 45 nm, and the SnO2 particles were found to contain many pores according to the SEM analysis. The sensitivity of the nano SnO2-based sensors was measured for 5 ppm CH4 gas and CH3CH2CH3 gas at room temperature by comparing the resistance in air with that in the target gases. The results showed that the best sensitivity of SnO2:Ni and SnO2:Co sensors for CH4 gas and CH3CH2CH3 gas at room temperature was observed in SnO2:Ni sensors doped with 8 wt% Ni. The response time of the SnO2:Ni gas sensors was 10 seconds and recovery time was 15 seconds for the CH4 and CH3CH2CH3 gases.

Nano-indium-coated ZnO:In thick films were prepared by a hydrothermal method. ZnO:In gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties of the gas sensors were investigated for hydrocarbon gas. The effects of the indium concentration of the ZnO:In gas sensors on the structural and morphological properties were investigated by X-ray diffraction and scanning electron microscopy. XRD patterns revealed that the ZnO:In with wurtzite structure was grown with (1 0 0), (0 0 2), and (1 0 1) peaks. The quantity of In coating on the ZnO surface increased with increasing In concentration. The sensitivity of the ZnO:In sensors was measured for 5 ppm CH4 gas and CH3CH2CH3 gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to CH4 gas and CH3CH2CH3 gas of the ZnO:In sensors was observed at the In 6 wt%. The response and recovery times of the 6 wt% indiumcoated ZnO:In gas sensors were 19 s and 12 s, respectively.

[ WO3 ]powders were ball-milled with an alumina ball for 0-72 hours. In2O3 doped WO3 was prepared by soaking ball-milled WO3 in an InCl3 solution. The mixed powder was annealed at 700˚C for 30 min in an air atmosphere. A paste for screen-printing the thick film was prepared by mixing the WO3:In2O3 powders with α-terpinol and glycerol. In2O3 doped WO3 thick films were fabricated into a gas sensor by a screen-printing method on alumina substrates. The structural properties of the WO3:InO3 thick films were a monoclinic phase with a (002) dominant orientation. The particle size of the WO3:InO3 decreased with the ball-milling time. The sensing characteristics of the In2O3 doped WO3 were investigated by measuring the electrical resistance of each sensor in the test-box. The highest sensitivity to 5 ppm CH4 gas and 5 ppm CH3CH2CH3 gas was observed in the ball-milled WO3:InO3 gas sensors at 48 hours. The response time of WO3:In2O3 gas sensors was 7 seconds and recovery time was 9 seconds for the methane gas.

ZnS:Mn, Dy yellow phosphors for White Light Emitting Diode were synthesized by a solid state reaction methodusing ZnS, MnSO4·5H2O, S and DyCl3·6H2O powders as starting materials. The mixed powder was sintered at 1000oC for 4h in an air atmosphere. The photoluminescence of the ZnS:Mn, Dy phosphors showed spectra extending from 480 to 700nm,peaking at 580nm. The photoluminescence of 580nm in the ZnS:Mn, Dy phosphors was associated with 4T1→6A1 transitionof Mn2+ ions. The highest photoluminescence intensity of the ZnS:Mn, Dy phosphors under 450nm excitation was observedat 4mol% Dy doping. The enhanced photoluminescence intensity of the ZnS:Mn, Dy phosphors was explained by energytransfer from Dy3+ to Mn2+. The CIE coordinate of the 4 mol% Dy doped ZnS:Mn, Dy was X=0.5221, Y=0.4763. Theoptimum mixing conditions for White Light Emitting Diode was obtained at the ratio of epoxy:yellow phosphor=1:2 formCIE coordinate.

ZnO nanorods for gas sensors were prepared by a hydrothermal method. The ZnO gas sensors were fabricated on alumina substrates by a screen printing method. The gas-sensing properties of the ZnO nanorods were investigated for CH4 gas. The effects of growth time on the structural and morphological properties of the ZnO nanorods were investigated by X-ray diffraction and scanning electron microscope. The XRD patterns of the nanocrystallized ZnO nanorods showed a wurtzite structure with the (002) predominant orientation. The diameter and length of the ZnO nanorods increased in proportion to the growth time. The sensitivity of the ZnO sensors to 5 ppm CH4 gas was investigated for various growth times. The ZnO sensors exhibited good sensitivity and rapid response-recovery characteristics to CH4 gas, and both traits were dependent on the growth time. The highest sensitivity of the ZnO sensors to CH4 gas was observed with the growth time of 7 h. The response and recovery times were 13 s and 6 s, respectively.

Ni 8 wt.%-doped tin oxide (SnO2) thick films were fabricated into gas sensors by the method of screen printing onto alumina substrates. The particle size of SnO2 was controlled by changing the ball-mill time between 0~120 h. The structural and morphological properties of these thick films were investigated using X-ray diffraction and scanning electron microscopy. The structural properties of SnO2 powders showed a tetragonal phase with (110) dominant orientation. The particle size of the SnO2:Ni powders after ball-mill of 120 h was about 0.05 μm. The gas sensitivity (S = Rg/Ra) to 5 ppm CH4 gas and CH3CH2CH3 gas was measured at room temperature by comparing the resistance in air (Ra) with that of the target gases (Rg). The sensitivity of the SnO2 gas sensors was enhanced by increasing the ball-mill time. There was an association between the sensitivity of both the CH4 gas and the CH3CH2CH3 gas and the particle size of the SnO2. SnO2 gas sensors prepared by 72 h ball-mill showed a sensitivity of about 13 to 5 ppm CH4 gas and CH3CH2CH3 gas. The response time of the SnO2:Ni gas sensors to the CH4 gas was about 20 seconds.

Bi co-doped ZnS:Mn,Bi yellow phosphors for white light emitting diodes were prepared by the conventional solidstate reaction method. The optical and structural properties of ZnS:Mn,Bi phosphors were investigated by x-ray diffraction, scanning electro microscopy and photoluminescence. ZnS:Mn,Bi phosphors showed XRD patterns of hexagonal structure. The photoluminescence of ZnS:Mn,Bi phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn,Bi phosphors was associated with the 4T1 → 6A1 transition of the Mn2+ ions. The highest photoluminescent intensity of the phosphors under 405 nm and 450 nm excitation was obtained at Bi concentration of 7mol%. The optimum mixing conditions with epoxy and yellow phosphor for white light emitting diodes were observed in a ratio of epoxy:yellow phosphor of 1:3.5. The CIE chromaticity of the white LED at the 1:3.5 ratio was X = 0.3454 and Y = 0.2449.

Er을 첨가한 ZnS:Mn 형광체를 1000℃에서 4시간 고상반응법으로 소결하여 제조하였다. 결정 구조 및 광 특성은 XRD, PL 그리고 SEM을 통하여 분석하였다. XRD 결과, ZnS:Mn 형광체는 hexagonal 구조가 나타났고, Er의 농도가 증가함에 따라 Er2O3 구조가 관찰되었다. ZnS:Mn 형광체의 평균입자 크기는 약 15㎛였고, Er 첨가와 함께 ZnS:Mn, Er 형광체의 입자 크기는 감소하였다. 580nm 발광 피크는 ZnS:Mn, Er 형광체에서 Mn2+ 이온의 4T1→6A1으로의 전이에 의한 것이다. Er을 0.5mol% 첨가한 형광체의 발광 세기는 Er을 첨가하지 않은 ZnS:Mn 형광체보다 높았다. ZnS:Mn, Er 형광체에서 발광 세기의 증가는 Er3+에서 Mn2+로의 에너지 전이에 의한 것으로 생각된다.

Indium doped SnO2 thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the SnO2 were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the SnO2:In by X-ray diffraction showed a (110) dominant SnO2 peak. The size of SnO2 particles ranged from 0.05 to 0.1 μm, and SnO2 particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped SnO2 thick films for gas sensors was about 20 μm, as confirmed by cross sectional SEM image. Sensitivity of the SnO2:In gas sensor to 2000 ppm of CO2 gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to CO2 gas and H2S gas of the indium-doped SnO2 thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped SnO2 gas sensors to CO2 gas were attributed to the increase of oxygen vacancies and surface area in the SnO2:In. The SnO2:In gas sensors showed good selectivity to CO2 gas.

A space launch vehicle system represents a typical example of large-scale multi-disciplinary systems, consisting of subsystems such as mechanical structure, electronics, control, telecommunication, propulsion, material engineering etc. Mission assurance for launch success is needed over the lifecycle of a space vehicle development program and through launch. This study suggests a comprehensive approach to analyzing failure spaces of space system failures, especially launch failures, from viewpoints of latent conditions and active failures in Reason's Model. First it reviews methods to identify process failure spaces using systems engineering process as latent conditions and explains their analysis results. Second it reviews literatures to identify physical failure spaces, deficiency areas of launch vehicles itself, as active failures and explains their analysis results.

실무에서 지진해석법으로 널리 쓰이는 방법은 등가정적해석법과 응답스펙트럼해석법이다. 이 중 등가정적해석법에 의한 밑면전단력은 구조물의 주축을 해석좌표축에 어떻게 배치하는가와 상관없이 일관된 값을 나타낸다. 그러나 응답스펙트럼해석은 해석좌표 축에 구조물의 주축을 다르게 배치하여 해석을 수행하면 밑면전단력이 각기 다르게 발생한다. 이는 엔지니어가 구조물을 설계함에 있어 구조물의 주축을 해석좌표축에 어떻게 설정했는지에 따라 설계부재력이 모두 달라질 수 있음을 뜻한다. 또한 응답스펙트럼해석은 지진을 가한 방향의 직각방향에서 적지 않은 응답이 발생하는 경우가 생긴다. 한방향 해석에 대한 X와 Y축을 따라 분리되는 이러한 양방향 응답은 보정계수 산정시 쓰이는 밑면전단력을 작게 만들며 이는 결과적으로 보정계수를 크게하여 과다설계의 우려가 생긴다. 내진설계시 발생하는 이러한 문제점을 해결하기 위하여 본 논문에서는 수평의 강성 차이에 따라 구조물을 크게 세 가지(양방향 대칭 구조물, 한방향 비대칭구조물, 양방향 비대칭구조물)로 분류하여 각각의 경우에 대하여 간단한 모델을 선정하고 구조물의 주축을 회전시켜가면서 지진해석을 수행하였다. 각 경우의 예제구조물이 가지는 동적특성과 설계부재력을 살펴보았다. 현재 실무에서 적용되는 보정계수 산정법에 의한 설계부재력과 앞선 문제들을 해결하고자 본 논문에서 제안하는 새로운 보정계수 산정법에 의한 설계부재력을 비교하여 제안하는 보정계수 산정법의 효율성을 검토하였다. 그 결과로 새로 제안된 보정계수 산정법에 의하여 설계부재력을 산정하는 것이 내진설계시 엔지니어들이 겪을 수 있는 혼란을 덜어주며 경제적인 부재설계가 가능함을 알 수 있었다.되어 전 실험구 중에서 가장 높은 생존율 및 증식률을 보였다. 1.2-propanedial 1.5 M 실험구에서는 실험개시시 30\;{\times}\;10^4\;cell/ml이던 것이 3 일 후 138\;{\times}\;10^4\;cell/ml였고, 실험종료시인 5 일 후에는 385\;{\times}\;10^4\;cell/ml로 증식되어 가장 높은 증식률을 보였다. 참굴 D상 유생을 대상으로 먹이효과를 조사한 결과 실험구와 대조구간 유생의 성장 및 생존율에 유의한 차이를 보이지 않았다.C에서 73.3%, 10^{\circ}C에서 63.3% 및 5^{\circ}C에서 56.7%로 수온이 30^{\circ}C 이내에서는 높을수록 높은 경향을 보였다. 염분에 따른 잠입 실험 결과는 실험 개시 300분 경과 후 염분 30 psu에서 93.3%로 가장 높았고, 35 psu에서 90.0%, 25 psu에서 83.3%, 20 psu에서 60.0%, 15 psu 이하에서는 거의 잠입이 이루어 지지 않았다. 따라서, 적정 살포를 위한 잠입률은 치패의 크기와 상관없이 저질종류는 모래 (75%) + 뻘 (25%), 입자크기는 1 mm 모래에서 높게 나타났다. 공기 중 노출시간은 짧을수록, 수온은 30^{\circ}C 이내에서 높을수록, 염분은 20-35 psu 이내에서 높을수록 잠입률이 높은 경향을 나타내었다. 교수학습모형에 관련된 지식을 묻는 내용으로 주로 출제되었다. 이에 구체적인 개선방안으로 특정 교수학습

  A space launch vehicle system represents a typical example of large-scale multi-disciplinary systems, consisting of subsystems such as mechanical structure, electronics, control, telecommunication, propulsion, material engineering etc. A lot of cost is

본 연구의 목적은 3주 동안 장기간 냉각상태로 보관된 개 정자의 기능적 특성을 알아보고자 두 종류의 정자 희석액, Glucose-BSA(G-BSA), Dimitropoulos-II(BIMI)가 정자의 기능적 특성에 미치는 영향을 알아보고자 한다. 개 정액을 수지법에 의해 채취하여 원심분리한 후 정장은 제거하였다. 정자를 G-BSA나 DIMI으로 희석하여 최종 농도를 sperm/ml로 하였다. 희석된 정자를 정자 운송 시스템을 이용하여 루지애나 주립 대학

고양이의 연령에 따른 난포의 분포를 알아보고 난포의 배양과 난자 생산의 가능성을 알아보고자 0.3세부터 5세까지의 총 41 마리 고양이를 난소 적출술 후 사용하였다. 고양이 난소의 무게와 크기를 측정하고 난포의 분포를 알아보기 위해 난소를 10% formalin에 보관한 후 고정된 난소를 -sections으로 자른 후 조직 슬라이드를 준비하여 hematoxylin와 eosin으로 염색하였다. 난포의 분포를 200 배율와 400 배율 현미경하에서 평가하였

  The risk management is an organized method for identifying and measuring risk and for selecting, developing, and implementing options for the handling of risk. The risk management covers all programatic and technical factors which affect the system deve

This study developed the planning process for technical management of engineering project applying systems engineering process in order to correctly design technical management activities early during the system development projects. The developed process describes a systemic design process of a product to be developed as well as the development process and the personnel team of project organization. As an outcome of the process implemented by a Model-Based Systems Engineering(MBSE) software, a systems engineering management plan(SEMP) and a risk management plan can easily be produced.

This study developed the planning process for technical management of engineering project applying systems engineering process in order to correctly design technical management activities early during the system development projects. The developed process describes a systemic design process of a product to be developed as well as the development process and the personnel team of project organization. As an outcome of the process implemented by a Model-Based Systems Engineering(MBSE) software, a systems engineering management plan(SEMP) and a risk management plan can easily be produced.