In this study, we introduce a novel TiN/Ag embedded TiO2/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (Vo). The current-voltage (I-V ) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with a coplanar structure were fabricated to investigate the feasibility of their potential application in large size organic light emitting diodes (OLEDs). Drain currents, used as functions of the gate voltages for the TFTs, showed the output currents had slight differences in the saturation region, just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages of the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. After the application of a positive bias voltage stress for 50,000 s, the values of the threshold voltage of the coplanar structure TFTs were only slightly shifted, by 0.18 V, indicative of their stability. The coplanar structure TFTs were embedded in OLEDs and exhibited a maximum luminance as large as 500 nits, and their color gamut satisfied 99 % of the digital cinema initiatives, confirming their suitability for large size and high resolution OLEDs. Further, the image density of large-size OLEDs embedded with the coplanar structure TFTs was significantly enhanced compared with OLEDs embedded with conventional TFTs.

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 °C The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 °C. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

Tb3+-doped CaNb2O6 (CaNb2O6:Tb3+) thin films were deposited on quartz substrates at a growth temperature of 300 °C using radio-frequency magnetron sputtering. The deposited thin films were annealed at several annealing temperatures for 20 min and characterized for their structural, morphological, and luminescent properties. The experimental results showed that the annealing temperature had a significant effect on the properties of the CaNb2O6:Tb3+ thin films. The crystalline structure of the as-grown CaNb2O6:Tb3+ thin films transformed from amorphous to crystalline after annealing at temperatures greater than or equal to 700 °C. The emission spectra of the thin films under excitation at 251 nm exhibited a dominant emission band at 546 nm arising from the 5D4 → 7F5 magnetic dipole transition of Tb3+ and three weak emission bands at 489, 586, and 620 nm, respectively. The intensity of the 5D4 → 7F5 (546 nm) magnetic dipole transition was greater than that of the 5D4 → 7F6 (489 nm) electrical dipole transition, indicating that the Tb3+ ions in the host crystal were located at sites with inversion symmetry. The average transmittance at wavelengths of 370~1,100 nm decreased from 86.8 % at 700 °C to 80.5 % at an annealing temperature of 1,000 °C, and a red shift was observed in the bandgap energy with increasing annealing temperature. These results suggest that the annealing temperature plays a crucial role in developing green light-emitting CaNb2O6:Tb3+ thin films for application in electroluminescent displays.

ITO 투명 전극 필름은 디스플레이, 전기 자동차 등 산업 전 범위에서 널리 사용되는 전자 재료이다. 본 연구에서는 이러한 indium tin oxide (ITO) 필름의 열성형 안정성을 향상시키기 위하여 Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) 전도성 고분자 코팅 용액 조성을 결정하였다. 1000 S/cm의 고 전도성을 보이는 PEDOT:PSS 용액에 끓는점이 각기 다른 4가지 종류의 용매를 희석하였고, 코팅 전 후 면저항 변화를 분석하였다. 또한 380~800 nm 영역의 광 투과율 분 석 및 Raman 스펙트럼 분석을 통하여 PEDOT:PSS 박막이 코팅된 ITO 투명 전극의 전기적 특성 결정 메커니즘을 규명하였 다. 230°C 열성형 공정 결과 ITO 필름은 113% 연신 상태에서 이미 전기 전도성을 읽었지만, ethylene glycol을 희석 용매로 사용하여 얻어진 전도성 고분자 박막이 적용된 ITO 필름은 126% 고 연신 상태에서도 초기 60 Ω/sq 면저항을 246 Ω/sq로 유지하는 우수한 전기 전도성을 보였다.

해양산업시설에서는 많은 종류의 유해물질의 배출 가능성이 존재하기 때문에 이에 대한 체계적인 대응체계가 필요하다. 그 중 연속자동 측정이 가능하면서 ppb 수준의 낮은 검출하한 (limit of detection:LOD)를 갖는 센서 구현은 매우 중요하다. 이를 위해 본 연구에서 는 활성탄소(carbon black)와 Indium tin oxide (ITO) 나노입자를 혼합한 film의 표면저항의 변화를 이용한 고성능 센서 제안 및 구현을 위해 성능인자를 최적화하였다. 센서 구조는 접촉 면적과 전극 간격을 최적화하였다. 접촉 면적이 증가하면 감도, LOD 성능이 향상되었으며 60 mm2에서 최적화되었다. 또한, 전극 간격은 접촉 면적을 일정하게 유지한 상태에서 변화시켰으며 센서 응답은 전극 간격이 감소함에 따라 증가하는 것을 확인하였다. 마지막으로 센서 표면에서의 유해물질의 잔류시간 증가를 위해 화학흡착제를 적용하였다. 화학흡착제는 유해 물질을 선택적으로 흡수할 수 있는 polyester계를 선택하였다. 그 결과 농도가 증가함에 따라 응답이 선형적으로 증가하여 센서로 활용이 가능한 것을 확인하였다. 이러한 3가지의 방법을 통해 센서를 제작하였을 때 액상 유해물질을 기존 센서의 LOD(89.9 ppb)와 비교 10~40 ppb 정도의 낮은 농도를 검출할 수 있는 센서를 구현하였다.

In this experimental work, a p-type c-Si (100) substrate with 8 × 8 × 2 mm dimension was taken for TiCN thin-film coating deposition. The whole deposition process was carried out by chemical vapor deposition (CVD) process. The Si substrate was placed within the CVD chamber at base pressure and process pressure of 0.75 and 500 mTorr, respectively, in the presence of TiO2 (99.99% pure) and C (99.99% pure) powder mixture. Later on, quantity of C powder was varied for different set experiments. The deposition of TiCN coating was carried out in the presence of N2– H2–TiCl4–CH3CN gas mixture and 600 ℃ of fixed temperature. The time for deposition was fixed for 90 min with 10 and 5 ℃ min− 1 heating and cooling rate, respectively. Later on, heat treatment process was carried out over these deposited TiCN samples to investigate the changing characteristics. The heat treatment was carried out at 800 ℃ within the CVD chamber in the absence of any gas flow rate. The morphological properties of heat-treated samples have been improved significantly, evidence is observed from SEM and AFM analyses. The structural analysis by XRD has been suggested, upgradation in crystallinity of the heat-treated film as it possessed with sharp and higher intensity peaks. Evidence has been found that the electrochemical properties are enhanced for heat-treated sample. Raman spectroscopy shows that the intensity of acoustic phonon modes predominates the optic phonon modes for untreated samples, whereas for heat-treated samples, opposite trends have been observed. However, significant degradation in mechanical properties for heat-treated sample has been observed compared to untreated sample.