In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm−2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about 109~1010/cm2. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at 1070˚C on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures (1020~1070˚C) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.

본 연구에서는 계층적 깊이 입방체(LDC, Layerd Depth Cube)의 확장이자, 직교 프레그먼트 버퍼(OFB, Orthogoanl Fragment Buffer)에 메모리 효율성을 높인 통합 직교 프레그먼트 버퍼(UOFB, Unified Orthogonal Fragment Buffer)를 제안한다. UOFB는 기존의 텍스처 매핑 기법의 다양한 장점을 유지하는 동시에, 초고해상도의 표현이 가능한 텍스처 매핑을 위한 자료구조로서 3차원 데이터를 세 방향의 2차원 격자에 리샘플링 하여 각각의 깊이 레이어를 하나의 통합된 버퍼에 밀도있게 저장한 버퍼구조이다. 이러한 자료구조는 그래픽스 하드웨어의 퍼픽셀 연결리스트를 활용하여 쉽게 렌더링할 수 있다. 이를 통해 기존의 접근법들 보다 현저한 메모리 효율성을 보장하며 GPU상에서 구축되고 다루어 질 수 있으며 게임과 같은 실시간 응용분야 적용될 수 있다.

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at 700˚C for 10 minutes in N2 in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at 700˚C for 30 minutes in N2. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

본 논문에서는 6,13-bis (triisopropylsily lethynyl)-pentacene (TIPS-pentacene) 유기 박막 트랜지스터에 니켈 버퍼층을 적층했을 때의 효과를 연구하였다. 니켈 (Nickel) / 은(Silver) 소스 드레인 전극은 은 (Silver) 전극이 단독으로 쓰일 때 보다 에너지 레벨차이를 줄여 캐리어의 주입이 더 잘되도록 도와주므로써 전기적 특성을 향상 시켜준다. 또한 유기 게이트 절연체의 추가로 TIPS-pentacene 은 규칙적 배열된 형태를 가지므로써 소자 성능의 향상을 가지고 온다. 제작한 유기박막트랜지스터 에서 0.01 cm2의 포화영역 이동도를 얻을 수 있었으며, 또한 드레인 전압을 50 V로 하고 게이트 전압을 20 V에서 -50 V 까지 인가하였을 때 2×104의 전멸 비를 얻을 수 있었다. 이러한 결과를 polyethylene terephthalate (PET) 기판을 이용한 유연한 OTFTs 에 적용시켜본 결과 유리기판위에 제작했을 때와 비슷한 성능을 얻음을 확인하였다.

In the microelectronics packaging industry, the adhesion strength between Cu and polyimide and the thermal stability are very important factors, as they influence the performance and reliability of the device. The three different buffer layers of Cr, 50%Cr-50%Ni, and Ni were adopted in a Cu/buffer layer/polyimide system and compared in terms of their adhesion strength and thermal stability at a temperature of 300˚C for 24hrs. A 90-degree peel test and XPS analysis revealed that both the peel strength and thermal stability decreased in the order of the Cr, 50%Cr-50%Ni and Ni buffer layer. The XPS analysis revealed that Cu can diffuse through the thin Ni buffer layer (200Å), resulting in a decrease in the adhesion strength when the Cu/buffer layer/polyimide multilayer is heat-treated at a temperature of 300˚C for 24hrs. In contrast, Cu did not diffuse through the Cr buffer layer under the same heat-treatment conditions.

본 논문에서는 가압경수로(PWR) 고준위폐기물을 깊은 지하 500m에 처분 시 사용되는 처분용기 및 이를 보호하기 위하여 50㎝ 두께로 처분용기 주위를 감싸고 있는 벤토나이트 버퍼의 복합구조물에 지진 등의 지각 변동에 의하여 갑작스럽게 10㎝의 수평한 암반 전단력이 대칭적으로 가해졌을 때, 처분용기의 안전성(붕괴)을 예측하기 위하여 처분용기+벤토나이트 버퍼복합 구조물에 대한 비선형 구조해석을 수행하였다. 복합구조물을 구성하고 있는 물질들은 탄소성체로 가정하였으며, 대변형 발생 시 항복을 예측하는 항복조건식으로는 처분용기를 구성하고 있는 금속물질(구리, 주철)에 대하여 von-Mises 항복조건식을, 벤토나이트 버퍼물질에 대하여는 Drocker-Prager 항복조건식을 적용하였다. 해석 결과들을 분석하면 비록 10㎝의 수평한 대칭 암반 전단력에 대하여 벤토나이트 버퍼에는 항복점을 훨씬 상회하는 대변형이 발생하였지만, 내부의 처분용기를 구성하고있는 주철 및 구리에는 여전히 매우 작은 탄성변형 및 항복응력보다 작은 응력이 발생하고 있음을 알 수 있었다. 따라서 갑작스런 10㎝의 수평한 암반 전단력에 대하여 50㎝ 두께의 벤토나이트 버퍼는 안전하게 내부의 처분용기를 보호하고 있음을 알 수가 있다. 해석결과는 또한 벤토나이트 버퍼의 전단변형에 의하여 처분용기에 휨변형이 발생함을 보여주고 있다.

This paper deals with the sequencing problem in the operation of the manufacturing systems with the constraint of buffer capacity. Some of studies for this theme have been progressed for several years. And then most of them consiedred only one objective, such as maximum lateness, machine utilization, makespan, mean flowtime and so on. This study deal with two objectives of the delivery for customers and the idle time of machines for producers. For the decision of sequence, the utility function is used. The developed heuristic algorithm presents a good solution. Through a numerical example, the procedures of the job sequencing is explained.

We have seen the effects of buffer layer in organic light-emitting diodes(OLEDs) using poly(N-vinylcarbazole)(PVK) depending on a concentration of PVK. Polymer PVK buffer layer was made using spin casting technique. Two device structures were fabricated; one is ITO/TPD/Alq3/Al as a reference, and the other is ITO/PVK/TPD/Alq3/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage-luminance characteristics and an external quantum efficiency were measured with a variation of spin-casting rpm speeds and PVK concentration. We have obtained an improvement of external quantum efficiency by a factor of four when the PVK concentration is 0.1wt% is used. The improvement of efficiency is expected due to a function of hole-blocking of PVK in OLEDs.

컨테이너 크레인은 컨테이너터미널에서 사용되는 주요 장비면서 컨테이너 크레인의 효율은 컨테이너터미널의 생산성을 결정한다. 컨테이너 크레인의 전형적인 유형은 싱글 트롤리를 가지고 있으며 진보된 유형들 중의 하나가 듀얼 트롤리형이다. 본 논문의 목적은 컨테이너 터미널에서 듀얼 트를리형 컨테이너 크레인의 버퍼 사이즈를 분석하는 것이다. 듀얼 트롤리형 컨테이너 크레인의 버퍼 공간을 분석하기 위한 시뮬레이션 모델을 소개한다. 버퍼 공간은 해측의 메인 트롤리와 야드측의 세컨 트롤리 사이에 위치한다. 요구 생산성을 추정하기 위해 다양한 시뮬레이션 실험을 수행하여 버퍼 사이즈를 분석한다.