ITO 투명 전극 필름은 디스플레이, 전기 자동차 등 산업 전 범위에서 널리 사용되는 전자 재료이다. 본 연구에서는 이러한 indium tin oxide (ITO) 필름의 열성형 안정성을 향상시키기 위하여 Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) 전도성 고분자 코팅 용액 조성을 결정하였다. 1000 S/cm의 고 전도성을 보이는 PEDOT:PSS 용액에 끓는점이 각기 다른 4가지 종류의 용매를 희석하였고, 코팅 전 후 면저항 변화를 분석하였다. 또한 380~800 nm 영역의 광 투과율 분 석 및 Raman 스펙트럼 분석을 통하여 PEDOT:PSS 박막이 코팅된 ITO 투명 전극의 전기적 특성 결정 메커니즘을 규명하였 다. 230°C 열성형 공정 결과 ITO 필름은 113% 연신 상태에서 이미 전기 전도성을 읽었지만, ethylene glycol을 희석 용매로 사용하여 얻어진 전도성 고분자 박막이 적용된 ITO 필름은 126% 고 연신 상태에서도 초기 60 Ω/sq 면저항을 246 Ω/sq로 유지하는 우수한 전기 전도성을 보였다.

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

목 적: 13.56 MHz Radio Frequency(RF) 고주파 송수신 장치를 만들고, 이를 이용하여 ITO안경렌즈 코팅 막의 두께와 전면커브에 대한 유도기전력 감소를 관찰하여 ITO 박막두께 측정을 연구하였다. 방 법: 전자빔 증착 장치를 이용하여 안경렌즈 하드 코팅 막 위에 다층막 코팅(SiO2/ZrO2/SiO2/ZrO2/SiO2/ITO/발수코팅막)을 하였는데, 이 때 ITO 코팅 시 이온빔 보조 장치를 사용하였다. 광투과율측정기로 ITO 코팅 안경렌즈의 투과율을 확인하였고, 13.56 MHz 수정발진소자를 사용하여 RF 고주파 송수신 장치를 만들었으며, 이 송수신 장치로부터 ITO 박막의 두께와 안경렌즈 커브에 의한 유도기전력의 감소량을 측정하였다. 결 과: 광투과율 측정 장치를 이용하여 ITO 안경렌즈 박막 두께에 따른 투과율을 측정한 결과, 가시광선 영역에서 ITO 박막이 두꺼워짐에 따라 처음에는 약간 증가하다가 점차 감소하는 경향을 나타내었다. 또한 RF 고주파 송수신 장치에서 안경렌즈를 RF 송수신 코일 위에 놓았을 때 유도기전력의 감소량은, 각각의 커브에서 ITO 두께가 커짐에 따라 유도기전력의 감소량이 증가함을 알 수 있었다. 또한 안경렌즈를 RF 송수신 코일 위에 놓았을 때 유도기전력의 감소량이 안경렌즈를 RF 송수신기 코일 안에 놓았을 때 유도기전력의 감소량보다 큰 것을 알 수 있었다. 결 론: 13.56 MHz RF 고주파 송수신 장치를 만들고, 이를 이용하여 ITO 안경렌즈 코팅 막의 두께와 전면커브에 대한 유도기전력 감소를 관찰한 결과, 안경렌즈를 RF 송수신코일 위에 놓았을 때 유도기전력의 감소량은 각각의 커브에서 ITO 두께는 커짐에 따라, 안경렌즈 전면 커브는 작아짐에 따라 증가함을 알 수 있었다.

This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with hightransparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolvedthese problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetronroll-to-roll sputter system utilizing ITO and SiO2 targets of ITO and SiO2. In this experiment, the effect of D.C. power, windingspeed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point ofsheet resistance, transmittance, and chromaticity(b*). The deposition of SiO2 was performed with RF power of 400W, Ar gasof 50sccm and the deposition of ITO, DC power of 600W, Ar gas of 50sccm, O2 gas of 0.2sccm, and winding speed of 0.56m/min. High quality ITO thin films without SiO2 layer had chromaticity of 2.87, sheet resistivity of 400ohm/square, and trans-mittance of 88% and SiO2-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709ohm/square, and transmittanceof more than 90% were obtained. As a result, SiO2 was coated on PET before deposition of ITO, their chromaticity(b*) andtransmittance were better than previous results of ITO films. These results show that coating of SiO2 induced arisingchromaticity(b*) and transmittance. If the thickness of SiO2 is controlled, sheet resistance value of ITO film will be expected tobe better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.

Sn doped In2O3 (ITO) and ITO/Cu/ITO (ICI) multilayer films were prepared on glass substrates with a reactive radiofrequency (RF) magnetron sputter without intentional substrate heating, and then the influence of the Cu interlayer on themethanol gas sensitivity of the ICI films were considered. Although both ITO and ICI film sensors had the same thicknessof 100nm, the ICI sensors had a sandwich structure of ITO 50nm/Cu 5nm/ITO 45nm. The ICI films showed a ten timeshigher carrier density than that of the pure ITO films. However, the Cu interlayer may also have caused the decrement of carriermobility because the interfaces between the ITO and Cu interlayer acted as a barrier to carrier movement. Although the ICIfilms had two times a lower mobility than that of the pure ITO films, the ICI films had a higher conductivity of 3.6·10-4Ωcmdue to a higher carrier density. The changes in the sensitivity of the film sensors caused by methanol gas ranging from 50 to500ppm were measured at room temperature. The ICI sensors showed a higher gas sensitivity than that of the ITO single layersensors. Finally, it can be concluded that the ICI film sensors have the potential to be used as improved methanol gas sensors.

Transparent ITO films were deposited on a polycarbonate substrate with RF magnetron sputtering in a pure argon(Ar) and oxygen (O2) gas atmosphere, and then post deposition electro annealed for 20 minutes in a 4×10-1Pa vacuum. Electronbombardment with an accelerating voltage of 100V increased the substrate temperature to 120oC. XRD analysis of the depositedITO films did not show any diffraction peaks, while electro annealed films indicated the growth of crystallites on the (211), (222),and (400) planes. The sheet resistance of ITO films decreased from 103 to 82Ω/□. The optical transmittance of ITO films inthe visible wavelength region increased from 85 to 87%. Observation of the work function demonstrated that the electro-annealingincreased the work function of ITO films from 4.4 to 4.6eV. The electro annealed films demonstrated a larger figure of meritof 3.0×10-3Ω-1 than that of as deposited films. Therefore, the electro annealed films had better optoelectrical performances thanas deposited ITO films.