This study describes the doping effect of Yb2O3 on microstructure, electrical and dielectric properties of ZnO-V2O5- MnO2-Nb2O5 (ZVMN) ceramic semiconductors sintered at a temperature as low as 900°C. As the doping content of Yb2O3 increases, the ceramic density slightly increases from 5.50 to 5.54 g/cm3; also, the average ZnO grain size is in the range of 5.3-5.6 μm. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of Yb2O3 is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% Yb2O3 reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of 2.46-7.41×1017 cm−3 with increasing doping content of Yb2O3 and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of Yb2O3 reaches 0.1 mol%, whereas further doping increases it. The value of tanδ increases from 0.209 to 0.268 with the doping content of Yb2O3.

Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)BaTiO3-x(Bi0.5K0.5)TiO3ceramics doped with Nb2O5 were investigated in order to develop the Pb-free PTC thermistor available at hightemperatures of >120oC. The PTCR characteristics appearing in the (Bi0.5Ki0.5)TiO3 (<5mol%) incorporatedBaTiO3 ceramics, which might be mainly due to Bi+3 ions substituting for Ba+2 sites. The 0.99BaTiO3-0.01(Bi0.5K0.5)TiO3 ceramics showed good PTCR characteristics of a low resistivity at room temperature (ρr) of31 Ω·cm, a high ρmax/ρmin ratio of 5.38×103, and a high resistivity temperature factor (α) of 17.8%/oC. Theaddition of Nb2O5 to 0.99BaTiO3-0.01(Bi0.5K0.5)TiO3 ceramics further improved the PTCR characteristics.Especially, 0.025mol% Nb2O5 doped 0.99BaTiO3-0.01(Bi0.5K0.5)TiO3 ceramics exhibited a significantly increasedρmax/ρmin ratio of 8.7×103 and a high α of 18.6%/oC, along with a high Tc of 148oC despite a slightly increasedρr of 39 Ω·cm.

To co-fire with commercial LTCC (Low Temperature Co-fired Ceramic) materials at , different contents of were added to the (BZN) ceramics. According to the test results, the cubic phase of BZN was transformed into orthorhombic in all the test materials. phase was formed in test materials with of addition. The phase transformation of cubic BZN was controlled during the synthesis process with excess ZnO content. The Cubic and orthorhombic phases of BZN could coexist and be sintered densely at .

저손실 망간징크 페라이트에서 CaO-SiO2첨가는 입계에 높은 전기저항층을 형성시켜 와류에 의한 손실을 감소시키는 것으로 알려져 있다. 본 실험에서는 Nb2O5 를 제 3의 첨가제로 사용하여 저손실 망간징크 페라이트에서의 전자기적 물성변화를 관찰하였다. Nb2O5 300ppm 이상 첨가시 부분적인 과대입자 성장이 관찰되었으며, 200ppm 첨가시 CaO-SiO2만 첨가한 시편에 비하여 밀도가 증가하였다. Nb2O5 첨가시에는 100ppm 이하의 SiO2첨가에서 우수한 전력손실 특성이 나타났으며, 고온 소결시 Nb2O5-CaO를 첨가한 시편에서 낮은 전력손실을 나타내었다.