The effects of printed circuit board electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the electromigration reliability and shear strength of Sn-3.5Ag Pb-free solder bump were systematically investigated. In-situ annealing tests were performed in a scanning electron microscope chamber at 130, 150, and 170˚C in order to investigate the growth kinetics of intermetallic compound (IMC). Electromigration lifetime and failure modes were investigated at 150˚C and 1.5×105A/cm2, while ball shear tests and failure mode analysis were conducted under the high-speed conditions from 10 mm/s to 3000 mm/s. The activation energy of ENIG and OSP surface finishes during annealing were evaluated as 0.84 eV and 0.94 eV, respectively. The solder bumps with ENIG surface finish showed longer electromigration lifetime than OSP surface finish. Shear strengths between ENIG and OSP were similar, and the shear energies decreased with increasing shear speed. Failure analysis showed that electrical and mechanical reliabilities were very closely related to the interfacial IMC stabilities.

In semiconductor manufacturing, the circuit integrity of packaged BGA devices is tested by measuring electrical resistance using test sockets. Test sockets have been reported to often fail earlier than the expected life-time due to high contact resistance. This has been attributed to the formation of Sn oxide films on the Au coating layer of the probe pins loaded on the socket. Similar to contact failure, and known as "fretting", this process widely occurs between two conductive surfaces due to the continual rupture and accumulation of oxide films. However, the failure mechanism at the probe pin differs from fretting. In this study, the microstructural processes and formation mechanisms of Sn oxide films developed on the probe pin surface were investigated. Failure analysis was conducted mainly by FIB-FESEM observations, along with EDX, AES, and XRD analyses. Soft and fresh Sn was found to be transferred repeatedly from the solder bump to the Au surface of the probe pins; it was then instantly oxidized to SnO. The SnO2 phase is a more stable natural oxide, but SnO has been proved to grow on Sn thin film at low temperature (< 150˚C). Further oxidation to SnO2 is thought to be limited to 30%. The SnO film grew layer by layer up to 571 nm after testing of 50,500 cycles (1 nm/100 cycle). This resulted in the increase of contact resistance and thus of signal delay between the probe pin and the solder bump.

Glasses were prepared with compositions of (13-x)BaO-80B2O3-7Li2O·xSm2O3, BBLSx(x=0.5, 0.4, 0.3) by melting the starting materials of boron oxide(99.9%), lithium oxide(99.9%), barium carbon oxide(99.9%), and samarium oxide(99.9%) and then quenching the melt at 1350˚C. This led to good-quality BBLSx(x=0.4, 0.3) and poor-quality BBLSx(x=0.5) glasses. The physical and structural properties of the BBLSx glasses were studied by means x-ray diffraction, scanning electron microscopy(SEM), differential scanning calorimetry(DSC), and dielectric spectroscopy. From the x-ray diffraction and SEM results, the quality of the BBLSx glasses significantly depends on the Sm2O3 concentration. The x-ray diffraction pattern showed that the crystallites in the BBLSx glasses after heat treatment at 700˚C may be LiBaB9O15. From the DSC results, the glass transition temperatures(Tg), crystallization temperatures(Tc), and the maximum temperatures of the crystallized(Tp) BBLSx glasses all changed with the Sm2O3 concentration. According to the dielectric spectroscopy results, the values of the real dielectric constant and Tan δ of the BBLSx glasses depended on the Sm2O3 concentration. The values of the real dielectric constant and Tan δ were also shown to depend on the measuring temperature, possibly due to the ion migration in the bulk of the BBLSx glasses.

In this study, we optimized Pb-free Sn/Ni plating thickness and conditions were optimized to counteract the environmental regulations, such as RoHS and ELV(End-of Life Vehicles). The B10 life verification method was also suggested to have been successful when used with the accelerated life test(ALT) for assessing Pb-free solder joint life of piezoelectric (PZT) ceramic resonator. In order to evaluate the solder joint life, a modified Norris-Landzberg equation and a Coffin-Manson equation were utilized. Test vehicles that were composed of 2520 PZT ceramic resonator on FR-4 PCB with Sn-3.0Ag-0.5Cu for ALT were manufactured as well. Thermal shock test was conducted with 1,500 cycles from (-40±2)˚C to (120±2)˚C, and 30 minutes dwell time at each temperature, respectively. It was discovered that the thermal shock test is a very useful method in introducing the CTE mismatch caused by thermo-mechanical stress at the solder joints. The resonance frequency of test components was measured and observed the microsection views were also observed to confirm the crack generation of the solder joints.

방사선 특히, 엑스선 또는 감마선으로부터 인체를 보호하기 위해 납(Pb)으로 된 보호 장구를 광범위하게 사용해왔다. 최근 납 중독 및 환경오염의 문제로 납을 대신하는 무연 방사선 차폐재의 개발이 활발히 이루 어지고 있다. 차폐재의 성능 확보를 위해서는 제작 및 평가의 순환 사이클을 반복하게 된다. 본 연구는 실제 무연 방사선 차폐소재의 제작에 앞서 차폐재의 성능을 몬테카를로 전산모사를 통해 확인함으로써 가능한 차폐소재의 조합을 연구하였다. 방사선 차폐소재의 평가에 사용되는 조건으로 엑스선관을 Geant4를 이용하여 전산모사하고 획득된 광자 스펙트럼을 이용하여 텅스텐과 비스무스의 조합에 따른 차폐소재의 성능을 평 가하였다. 차폐소재의 공극에 따른 성능 저하도 평가하였다. 방사선 차폐 소재 개발 시 공극률을 줄이는 것 이 중요한 인자라는 것을 알 수 있었다.