Semiconductor manufacturing has suffered from the complex process behavior of the technology oriented control in the production line. While the technological processes are in charge of the quality and the yield of the product, the operational management is also critical for the productivity of the manufacturing line. The fabrication line in the semiconductor manufacturing is considered as the most complex part because of various kinds of the equipment, re-entrant process routing and various product devices. The efficiency and the productivity of the fabrication line may give a significant impact on the subsequent processes such as the probe line, the assembly line and final test line. In the management of the re-entrant process such as semiconductor fabrication, it is important to keep balanced fabrication line. The Performance measures in the fabrication line are throughput, cycle time, inventory, shortage, etc. In the fabrication, throughput and cycle time are the conflicting performance measures. It is very difficult to achieve two conflicting goal simultaneously in the manufacturing line. The capacity of equipment is important factor in the production planning and scheduling. The production planning consideration of capacity can make the scheduling more realistic. In this paper, an input and scheduling rule are to achieve the balanced operation in semiconductor fabrication line through equipment capacity and workload are proposed and evaluated. New backward projection and scheduling rule consideration of facility capacity are suggested. Scheduling wafers on the appropriate facilities are controlled by available capacity, which are determined by the workload in terms of the meet the production target.

This study focuses on the formation of input release lots in a semiconductor wafer fabrication facility. After the order-lot pegging process assigns lots in the fab to orders and calculates the required quantity of wafers for each product type to meet customers’ orders, the decisions on the formation of input release lots should be made to minimize the production costs of the release lots. Since the number of lots being processed in the wafer fab directly is related to the productivity of the wafer fab, the input lot formation is crucial process to reduce the production costs as well as to improve the efficiency of the wafer fab. Here, the input lot formation occurs before every shift begins in the semiconductor wafer fab. When input quantities (of wafers) for product types are given from results of the order-lot pegging process, lots to be released into the wafer fab should be formed satisfying the lot size requirements. Here, the production cost of a homogeneous lot of the same type of product is less than that of a heterogeneous lot that will be split into the number of lots according to their product types after passing the branch point during the wafer fabrication process. Also, more production cost occurs if a lot becomes more heterogeneous. We developed a multi-dimensional dynamic programming algorithm for the input lot formation problem and showed how to apply the algorithm to solve the problem optimally with an example problem instance. It is necessary to reduce the number of states at each stage in the DP algorithm for practical use. Also, we can apply the proposed DP algorithm together with lot release rules such as CONWIP and UNIFORM.

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped SnO2) etc., which have been widely used in LCD,touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realizetransparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additionalprerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical band-gap more than ~3.0eV. In this study, single-phase transparent semiconductor of SrCu2O2, which shows p-type conductivity, havebeen synthesized by 2-step solid state reaction at 950oC under N2 atmosphere, and single-phase SrCu2O2 thin films of p-typeTCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at 500oC, 1%H2/(Ar+H2) atmosphere. 3% H2/(Ar+H2) resulted in formation of second phases. Hall measurements confirmed the p-typenature of the fabricated SrCu2O2 thin films. The electrical conductivity, mobility of carrier and carrier density 5.27×10−2S/cm,2.2cm2/Vs, 1.53×1017/cm3 a room temperature, respectively. Transmittance and optical band-gap of the SrCu2O2 thin filmsrevealed 62% at 550nm and 3.28eV. The electrical and optical properties of the obtained SrCu2O2 thin films deposited by RFmagnetron sputtering were compared with those deposited by PLD and e-beam.

Manufacturing technologies of compound semiconductor are similar to the process of memory device, but management technology of manufacturing process for compound semiconductor is not enough developed. Semiconductor manufacturing environment also has been

Manufacturing technologies of compound semiconductor are similar to the process of memory device, but management technology of manufacturing process for compound semiconductor is not enough developed. Semiconductor manufacturing environment also has been emerged as mass customization and open foundry service so integrated manufacturing system is needed. In this study we design the integrated manufacturing system for compound semiconductor fabrication that has monitoring of process, reduction of lead-time, obedience of due-dates and so on. This study presents integrated manufacturing system having database system that based on web and data acquisition system. And we will implement them in the actual compound semiconductor fabrication.

본 연구에서는 선형가속기의 소조사면에 보다 정확한 선량계측이 가능하고, 빔 분포 영상화가 가능 계측시스템 개발을 위해 반도체화합물을 이용한 검출 센서를 제작하여 성능평가를 하였다. 센서 제작은 대면적 필름 형성을 위해 입자침전법을 이용하였다. 고에너지 X선에 대한 검출 특성은 암전류, 출력전류, 상승시간, 하강시간, 응답지연 측정을 통해 조사되었다. 측정 결과, TiO2가 혼합된 HgI2 센서가 PbI2, PbO, HgI2 보다 우수한 특성을 보였다. 선형가속기를 이용하여 선형성, 재현성 및 정확성 평가를 수행하였으며, 결과적으로 실제 임상에 적용되고 있는 선량 검출기와 감응 특성을 비교 시 재현성, 선형성 및 정확성 등에서 매우 우수한 특성을 나타내는 것을 확인할 수 있었다.

황섬유의 최저손실 파장영역인 1.55μm에서 고출력으로 안정하게 농작하는 광센서용 광원인 반도체 레이저를 제작하기 위하여 이론적인 해석을 수행한 후 제작하였다. 활성영역과 SCH층의 재료는 Ln1-xGaxAsyP1-y를 사용하였다. 광센서용 광원으로 사용되기 위해서는 넓은 스펙트럼 폭을 가지며, 가간섭 길이가 짧은 특성을 가지는 조건을 만족해야 한다. 따라서, 반도체 레이저에서 레이징을 억제시켜 줌으로써 넓은 스펙트럼 폭을 가지도록 설계를 하였고, 광섬유와 결합효율을 높일 수 있도록 tapered 형태의 스트라입 구조를 채택하여 마스크 패턴을 형성하였다. 또한, 레이징을 억제하기 위하여 후면에 윈도우 영역을 두었고, 측방향으로 경사각을 두어 반사도를 낮추도록 설계 및 제작하였다. 7도와 15도의 측면 경사각을 가지는 구조와 굽은 스트라입 구조를 가지는 소자를 제작하여 특성을 측정한 결과, 광센서용 광원으로서 적용이 가능한 광출력 특성과 넓은 스펙트럼 폭을 가졌다.

The hydroxyapatite(HAp) for the present study was prepared with the wastewater sludge from semiconductor fabrication process and it was crystallized in an electric furnace for 30 min at 900℃. The adsorption characteristics of HAp for phosphate ion in aqueous solution has been investigated. The adsorbed ratio of phosphate ion for HAp were investigated according to the reaction time, amount of HAp, concentration of standard solution, pH of solution, and influence of concemitant ions. The amount of adsorbed phosphate ion decreased with the increase of pH due to the mutual electrostatic repulsion between adsorbed phosphate ions and competitive adsorption between phosphate ion and OH- ion in aqueous solution. The maxium amount of the adsorption equilibrium for phosphate ion was about 24 mg/g of HAp. The HAp would likely to be a possible adsorbent for the removal of phosphate ion in the waste water.