In this work, the trend in the performance of carbon fiber (CF) and its composite during self-polymerization of polydopamine (PDA) at carbon fiber surface was investigated by varying the self-polymerization time of dopamine in an aqueous solution. Research has shown that the PDA coating elevated the surface roughness and polarity of the inert fiber. The tensile strength of single carbon fiber was significantly improved, especially after 9 h of polydopamine self-polymerization, increasing by 18.64% compared with that of desized carbon fiber. Moreover, the interlaminar shear strength (ILSS) of CF-PDA9-based composites was 35.06% higher than that of desized CF-based composites. This research will provide a deep insight into the thickness and activated ingredients of dopamine oxidation and self-polymerization on interfacial compatibility of carbon fiber/epoxy resin composites.

An Al2O3/AlN bilayer deposited on GaN by atomic layer deposition (ALD) is employed to prepare Al2O3/AlN/GaN metal-insulator-semiconductor (MIS) diodes, and their interfacial properties are investigated using X-ray photoelectron spectroscopy (XPS) with sputter etch treatment and current-voltage (I-V) measurements. XPS analyses reveal that the native oxides on the GaN surface are reduced significantly during the early ALD stage, indicating that AlN deposition effectively clelans up the GaN surface. In addition, the suppression of Al-OH bonds is observed through the ALD process. This result may be related to the improved device performance because Al-OH bonds act as interface defects. Finally, temperature dependent I-V analyses show that the barrier height increases and the ideality factor decreases with an increase in temperature, which is associated with the barrier inhomogeneity. A Modified Richardson plot produces the Richardson constant of A** as 30.45 Acm−2K−2, which is similar to the theoretical value of 26.4 Acm−2K−2 for n-GaN. This indicates that the barrier inhomogeneity appropriately explains the forward current transport across the Au/Al2O3/AlN/GaN interface.