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        검색결과 32

        24.
        1997.02 KCI 등재 SCOPUS 구독 인증기관 무료, 개인회원 유료
        AI-xSi/ySiC( x:6~18wt%, y: 3~9wt%, SiC 입자크기: 10~28μm) 복합재료를 재용해한 후 항온 유지하고 응고 시킬때 SiC 입자가 몰드의 하부로 침강하는 현상을 계통적으로 조사하였다. AI-Si/SiC 복합재료 용탕을 항온으로 유지하면 입자가 없는 지역은 유지시간이 약 처음 30분 동안 빠르게 증가한다. SiC 입자가 크기가 클수록 SiC입자의 크기가 클수록 SiC입자의 침강속도가 빠르다. 또한 복합재료중 철가한 SiC 입자의 부피분율이 증가하면 입자의 침강속도는 감소한다.
        4,000원
        25.
        1996.10 KCI 등재 SCOPUS 구독 인증기관·개인회원 무료
        알루미나 매트릭스 복합재료를 AIZnMg(7075)-합금의 직접적인 용융산화를 통하여 제조하였다. 충전재료는 17μm 크기의 모서리가 둥근 연마재용 SiC 입자를 사용하였다. 산화촉진재 SiO2를 사용한 경우와 사용하지 않은 경우를 비교하였다. 매트릭스 형성 매카니즘과 반응거동을 온도와 SiO2사용량을 중심으로 연구하였으며, 얻어진 AI2O3/SiC/금속 복합재료의 미세구조를 관찰하였다.
        31.
        2013.10 KCI 등재 서비스 종료(열람 제한)
        Microwave pyrolysis of SF6 on alumina-based catalyst doped with cerium sulfate was investigated. Silicon Carbide (SiC) used as a microwave susceptor. The catalysts were characterized by X-ray diffraction (XRD) and the destruction and removal efficiency (DRE) of SF6 was evaluated by GC-TCD. We found that the optimal cerium content was 20wt% at microwave pyrolysis of SF6. The catalysts modified by cerium showed higher DRE at lower reaction temperature compared with original catalysts. The highest DRE of SF6 on CeA (20) was 80% at 600oC reaction temperature and the DRE was up to 95% when the reaction temperature over 700oC. It showed the alumina-based with cerium promotes the removal efficiency of SF6 at a mild reaction temperature. From XRD results, modified catalysts could be higher stability because of no transformation of the crystal phase after reaction.
        32.
        2013.09 KCI 등재 서비스 종료(열람 제한)
        Tetrafluoromethane(CF4) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. CF4 decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of Al2O3 addition. High reaction temperature and addition of Al2O3 increased the CF4 removal efficiencies and the CO2/CF4 ratio. When the SA30 (SiC+30wt%Al2O3) and SA50 (SiC+50wt%Al2O3) were used, complete CF4 removal was achieved at 1000℃. The CF4 was reacted with Al2O3 and by-products such as CO2 and AlF3 were produced. Significant amount of by-product such as AlF3 was identified by X-ray powder diffraction analysis. It also showed that the γ-Al2O3 was transformed to α-Al2O3 after microwave thermal reaction.
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