The 3D printing process provides a higher degree of freedom when designing ceramic parts than the conventional press forming process. However, the generation and growth of the microcracks induced during heat treatment is thought to be due to the occurrence of local tensile stress caused by the thermal decomposition of the binder inside the green body. In this study, an alumina columnar specimen, which is a representative ceramic material, is fabricated using the digital light process (DLP) 3D printing method. DTG analysis is performed to investigate the cause of the occurrence of microcracks by analyzing the debinding process in which microcracks are mainly generated. HDDA of epoxy acrylates, which is the main binder, rapidly debinded in the range of 200 to 500oC, and microcracks are observed because of real-time microscopic image observation. For mitigating the rapid debinding process of HDDA, other types of acrylates PETA, PUA, and MMA are added, and the effect of these additives on the debinding rate is investigated. By analyzing the DTG in the 25 to 300oC region, it is confirmed that the PETA monomer and the PUA monomer can suppress the rapid decomposition rate of HDDA in this temperature range.

This study is aimed at preparing and evaluating the plasma resistance of YAS (Y2O3-Al2O3-SiO2) coating layer with crystalline YAG phase contents. For this purpose, YAS frits with controlled phase contents are prepared and melt-coated on sintered Al2O3 ceramics. Then, the results of phase analysis of crystalline YAS coating layer are compared to that of YAS frits, and discussed with regard to the plasma resistance of the YAS coating layer. The phase contents of the YAS frit change in a manner different from that of the prepared YAS coating layer, presumably owing to the composition change of YAS frit during the melt-coating process. The plasma resistance of the YAS coating layer is shown to increase with the YAG phase contents in the coating layer. Comparing the weight loss of YAS coating layer with those of commercial Y2O3, Al2O3, and quartz ceramics, the plasma resistance of the prepared YAS coating layer is 8 times higher than that of quartz and 3 times higher than that of Al2O3; this layer shows 70 % of the resistance of Y2O3.

The various sintered samples comprising of 72 wt%(Al2O3) : 28 wt%(SiO2) based ceramics were fabricated using a colloidal processing route. The phase analysis of the ceramics was performed using an X-ray diffractometer (XRD) at room temperature confirming the presence of Al2O5Si and Al5.33Si0.67O9.33. The surface morphology of the fracture surface of the different sintered samples having different sizes of grain distribution. The resistive and capacitive properties of the three different sintered samples at frequency sweep (1 kHz to 1 MHz). The contribution of grain and the non-Debye relaxation process is seen for various sintered samples in the Nyquist plot. The ferroelectric loop of the various sintered sample shows a slim shape giving rise to low remnant polarization. The excitation performance of the sample at a constant electric signal has been examined utilizing a designed electrical circuit. The above result suggests that the prepared lead-free ceramic can act as a base for designing of dielectric capacitors or resonators.

This study is aimed at improving the plasma resistance of Al2O3 ceramics on which plasma resistant YAS(Y2O3- Al2O3-SiO2) frit is melt-coated using a simple heat-treatment process. For this purpose, the results of phase analysis and microstructural observations of the prepared YAS frits and the coating layers on the Al2O3 ceramics according to the batch compositions are compared and discussed with regard to the results of plasma resistance test. The prepared YAS frits consist of crystalline or amorphous or co-existing crystalline and amorphous phases according to the batch compositions, depending on the role and content of each raw material. The prepared YAS frit is melt-coated on the densely sintered Al2O3 ceramics, resulting in a dense coating layer with a thickness of at least ~ 80 m. The YAS coating layer consists of crystalline YAG(Y3Al5O12), Y2Si2O7, and Al2O3 phases, and YAS glass phase. Plasma resistance of YAS coated Al2O3 ceramics is strongly dependent on the content of the YAG(Y3Al5O12) and Y2Si2O7 crystalline phases in the coating layer, especially on the content of the YAG phase. Comparing the weight loss of YAS coating ceramics with values obtained for commercial Y2O3, Al2O3, and quartz ceramics, the plasma resistance of the YAS coating ceramics is 6 times higher than that of quartz, 2 times higher than that of Al2O3, and 50 % of the resistance of Y2O3.

In the development of advanced ceramic tools, material improvements and design freedom are critical in improving tool performance. However, in the die press molding method, many factors limit tool design and make it difficult to develop innovative advanced tools. Ceramic 3D printing facilitates the production of prototype samples for advanced tool development and the creation of complex tooling products. Furthermore, it is possible to respond to mass production requirements by reflecting the needs of the tool industry, which can be characterized by small quantities of various products. However, many problems remain in ensuring the reliability of ceramic tools for industrial use. In this study, alumina inserts, a representative ceramic tool, was manufactured using the digital light process (DLP), a 3D printing method. Alumina inserts prepared by 3D printing are pressurelessly sintered under the same conditions as coupon-type specimens prepared by press molding. After sintering, a hot isostatic pressing (HIP) treatment is performed to investigate the effects of relative density and microstructure changes on hardness and fracture toughness. Alumina inserts prepared by 3D printing show lower relative densities than coupon specimens prepared by powder molding but indicate similar hardness and higher fracture toughness values.

The electrical and interfacial properties of HfO2/Al2O3 and Al2O3/HfO2 dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance–voltage(C–V) and current–voltage(I–V) measurements. In the C–V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the HfO2/Al2O3 sample. Higher frequency dispersion in the inversion region is observed for the Al2O3/HfO2 sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the Al2O3/HfO2 sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the Al2O3/HfO2 sample, which are not observed for the Al2O3/HfO2 sample. I–V measurements show a reduction of leakage current of about three orders of magnitude for the HfO2/Al2O3 sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the HfO2/Al2O3 sample. Based on these results, it is suggested that HfO2/Al2O3 is a better dielectric stack than Al2O3/HfO2 on AlN/p-Ge interface.

In this study, a process is developed for 3D printing with alumina (Al2O3). First, a photocurable slurry made from nanoparticle Al2O3 powder is mixed with hexanediol diacrylate binder and phenylbis(2,4,6- trimethylbenzoyl) phosphine oxide photoinitiator. The optimum solid content of Al2O3 is determined by measuring the rheological properties of the slurry. Then, green bodies of Al2O3 with different photoinitiator contents and UV exposure times are fabricated with a digital light processing (DLP) 3D printer. The dimensional accuracy of the printed Al2O3 green bodies and the number of defects are evaluated by carefully measuring the samples and imaging them with a scanning electron microscope. The optimum photoinitiator content and exposure time are 0.5 wt% and 0.8 s, respectively. These results show that Al2O3 products of various sizes and shapes can be fabricated by DLP 3D printing.

To develop flexible adsorbents for compact volatile organic compound (VOC) air purifiers, flexible as-spun zeolite fibers are prepared by an electrospinning method, and then zeolite particles are exposed as active sites for VOC (toluene) adsorption on the surface of the fibers by a thermal surface partial etching process. The breakthrough curves for the adsorption and temperature programmed desorption (TPD) curves of toluene over the flexible zeolite fibers is investigated as a function of the thermal etching temperature by gas chromatography (GC), and the adsorption/desorption characteristics improves with an increase in the thermal surface etching temperature. The effect of acidity on the flexible zeolite fibers for the removal of toluene is investigated as a function of the SiO2/Al2O3 ratios of zeolites. The acidity of the flexible zeolite fibers with different SiO2/Al2O3 ratios is measured by ammonia-temperature-programmed desorption (NH3-TPD), and the adsorption/desorption characteristics are investigated by GC. The results of the toluene adsorption/desorption experiments confirm that a higher SiO2/ Al2O3 ratio of the flexible zeolite fibers creates a better toluene adsorption/desorption performance.

A powder mixture of 70 wt% Al2O3 and 30 wt% hydroxyapatite (HA) is sintered at 1300 ℃ or 1350 ℃ for 2 h at normal pressure. An MgF2-added composition to make HA into fluorapatite (FA) is also prepared for comparison. The samples without MgF2 show α & β-tricalcium phosphates (TCPs) and Al2O3 phases with no HA at either of the sintering temperatures. In the case of 1,350 ℃, a CaAl4O7 phase is also found. Densification values are 69 and 78 %, and strengths are 156 and 104MPa for 1,300 and 1,350 ℃, respectively. Because the decomposition of HA produces a H2O vapor, fewer large pores of 5-6 μm form at 1,300 ℃. The MgF2-added samples show FA and Al2O3 phases with no TCP. Densification values are 79 and 87%, and strengths are 104 and 143 MPa for 1,300 and 1,350 ℃, respectively. No large pores are observed, and the grain size of FA (1-2 μm) is bigger than that of TCP (0.7 μm ≥) in the samples without MgF2. The resulting TCP/Al2O3 and FA/Al2O3 composites fabricated in situ exhibit strengths 6-10 times higher than monolithic TCP and HA.

In this study, the effect of the content of MgO-CaO-Al2O3-SiO2 (MCAS) glass additives on the properties of AlN ceramics is investigated. Dilatometric analysis and isothermal sintering for AlN compacts with MCAS contents varying between 5 and 20 wt% are carried out at temperatures ranging up to 1600℃. The results showed that the shrinkage of the AlN specimens increases with increasing MCAS content, and that full densification can be obtained irrespective of the MCAS content. Moreover, properties of the AlN-MCAS specimens such as microhardness, thermal conductivity, dielectric constant, and dielectric loss are analyzed. Microhardness and thermal conductivity decrease with increasing MCAS content. An acceptable candidate for AlN application is obtained: an AlN-MCAS composite with a thermal conductivity over 70 W/m·K and a dielectric loss tangent (tan δ) below 0.6 × 10−3, with up to 10 wt% MCAS content.

In this study, MgO–CaO–Al2O3–SiO2 (MCAS) nanocomposite glass powder having a mean particle size of 50 nm and a specific surface area of 40 m2/g is used as a sintering additive for AlN ceramics. Densification behaviors and thermal properties of AlN with 5 wt% MCAS nano-glass additive are investigated. Dilatometric analysis and isothermal sintering of AlN-5wt% MCAS compact demonstrates that the shrinkage of the AlN specimen increases significantly above 1,300oC via liquid phase sintering of MCAS additive, and complete densification could be achieved after sintering at 1,600oC, which is a reduction in sintering temperature by 200oC compared to conventional AlN-Y2O3 systems. The MCAS glass phase is satisfactorily distributed between AlN particles after sintering at 1,600oC, existing as an amorphous secondary phase. The AlN specimen attained a thermal conductivity of 82.6 W/m·K at 1,600oC.

Recently, the properties of nanostructured materials as advanced engineering materials have received great attention. These properties include fracture toughness and a high degree of hardness. To hinder grain growth during sintering, it is necessary to fabricate nanostructured materials. In this respect, a high-frequency induction-heated sintering method has been presented as an effective technique for making nanostructured materials at a lower temperature in a very short heating period. Nanopowders of W and Al2O3 are synthesized from WO3 and Al powders during high-energy ball milling. Highly dense nanostructured W-Al2O3 composites are made within three minutes by high-frequency induction-heated sintering method and materials are evaluated in terms of hardness, fracture toughness, and microstructure. The hardness and fracture toughness of the composite are 1364 kg/mm2 and 7.1 MPa·m1/2, respectively. Fracture toughness of nanostructured W-Al2O3 is higher than that of monolithic Al2O3. The hardness of this composite is higher than that of monolithic W.

An Al2O3/AlN bilayer deposited on GaN by atomic layer deposition (ALD) is employed to prepare Al2O3/AlN/GaN metal-insulator-semiconductor (MIS) diodes, and their interfacial properties are investigated using X-ray photoelectron spectroscopy (XPS) with sputter etch treatment and current-voltage (I-V) measurements. XPS analyses reveal that the native oxides on the GaN surface are reduced significantly during the early ALD stage, indicating that AlN deposition effectively clelans up the GaN surface. In addition, the suppression of Al-OH bonds is observed through the ALD process. This result may be related to the improved device performance because Al-OH bonds act as interface defects. Finally, temperature dependent I-V analyses show that the barrier height increases and the ideality factor decreases with an increase in temperature, which is associated with the barrier inhomogeneity. A Modified Richardson plot produces the Richardson constant of A** as 30.45 Acm−2K−2, which is similar to the theoretical value of 26.4 Acm−2K−2 for n-GaN. This indicates that the barrier inhomogeneity appropriately explains the forward current transport across the Au/Al2O3/AlN/GaN interface.

수소원자는 금속 표면에 흡착하여 해리되고 금속 격자 사이를 이동해 다시 수소분자로 재결합되어 탈착할 수 있으며 이러한 과정으로 수소는 금속을 통해 투과할 수 있다. 특히 수소원자는 팔라듐에서 높은 용해도와 이동도를 보이기 때문에 우수한 수소 투과 특성을 나타낸다. 본 연구에서는 무전해 도금을 이용하여 Pd 금속을 α-Al2O3 중공사 지지체에 증착시켜 SEM&EDS 분석을 통해 Pd 코팅 특성을 확인하였다. 치밀 Pd 층을 확인하기 위한 분리막의 leak 테스트 후 고온 수소투과 실험을 통해 분리막의 수소투과특성을 확인하였다. 본 연구는 “교육부 기본연구(NRF-2017R1D1A1B03036250)”의 지원으로 수행되었습니다.

Al2O3-SiC ceramic composites are produced using pressureless sintering, and their plasma resistance, electrical resistance, and mechanical properties are evaluated to confirm their applicability as electrostatic-discharge-safe components for semiconductor devices. Through the addition of Mg and Y nitrate sintering aids, it is confirmed that even if SiC content exceeded 10%, complete densification is possible by pressureless sintering. By the uniform distribution of SiC, the total grain growth is suppressed to about 1 μm; thus an Al2O3-SiC sintered body with a high strength over 600 MPa is obtained. The optimum amount of SiC to satisfy all the desired properties of electrostatic-discharge-safe ceramic components is obtained by finding the correlation between the plasma resistance and the electrical resistivity as a function of SiC amount.

β-Tricalcium phosphate (TCP) was added to Al2O3 to make a biomaterial with good mechanical properties. Using a TCP powder synthesized by a polymer complexation method, Al2O3 composites containing 30 wt% TCP were fabricated and characterized for densification, phase, microstructure, strength, and fracture toughness. With optimizing the powder preparation conditions, a high densification of 97 % was obtained by sintering at 1350 ℃ for 2 h. No reaction between the two components occurred and there was no transition to α-TCP. TCP grains with a size of 2-4 μm were well surrounded by Al2O3 grains with a size of 1 μm or less. Strength 61(Brazilian) or 187(3-p MOR) MPa, and fracture toughness 1.7 (notched beam) or 2.5 (indentation) MPa·m1/2 were obtained, which are large improvements over the strength of TCP/Al2O3 composites and toughness of TCP and hydroxyapatite in previous studies.