We investigated the characteristics of nano crystalline silicon(nc-Si) thin-film solar cells on graphite substrates. Amorphous silicon(a-Si) thin-film solar cells on graphite plates show low conversion efficiency due to high surface roughness, and many recombination by dangling bonds. In previous studies, we deposited barrier films by plasma enhanced chemical vapor deposition(PECVD) on graphite plate to reduce surface roughness and achieved ~7.8 % cell efficiency. In this study, we fabricated nc-Si thin film solar cell on graphite in order to increase the efficiency of solar cells. We achieved 8.45 % efficiency on graphite plate and applied this to nc-Si on graphite sheet for flexible solar cell applications. The characterization of the cell is performed with external quantum efficiency(EQE) and current density-voltage measurements(J-V). As a result, we obtain ~8.42 % cell efficiency in a flexible solar cell fabricated on a graphite sheet, which performance is similar to that of cells fabricated on graphite plates.

염료감응형 태양전지는 지속 가능한 에너지원으로서 많은 관심을 받고 있다. 염료감응형 태양전지의 효율과 장기 안정성은 전극 물질과 전해질에 의해 크게 영향을 받는데 본 총설에서는 전해질에 초점을 두어 서술하고자 한다. 고분자 전해질막은 염료감응형 태양전지에서 기존의 액체 전해질을 대체하기 위한 대안으로 제시되어 왔다. 기존의 액체 전해질은 높 은 효율을 나타낼 수 있지만 장기적인 안정성 문제와 누액 문제로 인해 고분자 전해질막에 관한 관심은 지속적으로 증가하고 있으며 매년 이와 관련된 논문들이 활발히 보고되고 있다. 본 총설은 염료감응형 태양전지를 위한 고분자 전해질막의 개념과 개발에 대한 간단한 설명을 다루고 있으며 고분자 매트릭스의 개질, 유-무기 가소제 및 이온성 액체와 같은 첨가제의 도입에 따른 염료감응형 태양전지의 효율과 전기화학적 특성에 대해서도 최근의 연구들이 정리되어 있다.

Quantum dots (QDs) are an attractive material for application in solar energy conversion devices because of their unique properties including facile band-gap tuning, a high-absorption coefficient, low-cost processing, and the potential multiple exciton generation effect. Recently, highly efficient quantum dot-sensitized solar cells (QDSCs) have been developed based on CdSe, PbS, CdS, and Cu-In-Se QDs. However, for the commercialization and wide application of these QDSCs, replacing the conventional rigid glass substrates with flexible substrates is required. Here, we demonstrate flexible CISe QDSCs based on vertically aligned TiO2 nanotube (NT) electrodes. The highly uniform TiO2 NT electrodes are prepared by two-step anodic oxidation. Using these flexible photoanodes and semi-transparent Pt counter electrodes, we fabricate the QDSCs and examine their photovoltaic properties. In particular, photovoltaic performances are optimized by controlling the nanostructure of TiO2 NT electrodes

Inorganic semiconductor compounds, e.g., CIGS and CZTS, are promising materials for thin film solar cells because of their high light absorption coefficient and stability. Research on thin film solar cells using this compound has made remarkable progress in the last two decades. Vacuum-based processes, e.g., co-evaporation and sputtering, are well established to obtain high-efficiency CIGS and/or CZTS thin film solar cells with over 20% of power conversion. However, because the vacuum-based processes need high cost equipment, they pose technological barriers to producing low-cost and large area photovoltaic cells. Recently, non-vacuum based processes, for example the solution/nanoparticle precursor process, the electrodeposition method, or the polymer-capped precursors process, have been intensively studied to reduce capital expenditure. Lately, over 17% of energy conversion efficiency has been reported by solution precursors methods in CIGS solar cells. This article reviews the status of non-vacuum techniques that are used to fabricate CIGS and CZTS thin films solar cells.

Cu2ZnSn(S,Se)4 (CZTSSe) films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu(CZT) precursor films. The precursor was dried in a capped state with aqueous NaOH solution. The CZT precursor films were sulfo-selenized in the S + Se vapor atmosphere. Sodium was doped during the sulfo-selenization treatment. The effect of sodium doping on the structural and electrical properties of the CZTSSe thin films were studied using FE-SEM(field-emission scanning electron microscopy), XRD(X-ray diffraction), XRF(X-ray fluorescence spectroscopy), dark current, SIMS(secondary ion mass spectrometry), conversion efficiency. The XRD, XRF, FE-SEM, Dark current, SIMS and cell efficiency results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the sodium doping. Further detailed analysis and discussion for effect of sodium doping on the properties CZTSSe thin films will be discussed.

Uniform TiO2 blocking layers (BLs) are fabricated using ultrasonic spray pyrolysis deposition (USPD) method. To improve the photovoltaic performance of dye-sensitized solar cells (DSSCs), the BL thickness is controlled by using USPD times of 0, 20, 60, and 100 min, creating TiO2 BLs of 0, 40, 70, and 100 nm, respectively, in average thickness on fluorine-doped tin oxide (FTO) glass. Compared to the other samples, the DSSC containing the uniform TiO2 BL of 70 nm in thickness shows a superior power conversion efficiency of 7.58±0.20% because of the suppression of electron recombination by the effect of the optimized thickness. The performance improvement is mainly attributed to the increased open-circuit voltage (0.77±0.02 V) achieved by the increased Fermi energy levels of the working electrodes and the improved short-circuit current density (15.67±0.43 mA/cm2) by efficient electron transfer pathways. Therefore, optimized TiO2 BLs fabricated by USPD may allow performance improvements in DSSCs.

Continuous efforts are being made to improve the efficiency of Si solar cells, which is the prevailing technology at this time. As opposed to the standard front-lit solar cell design, the back-lit design suffers no shading loss because all the metal electrodes are placed on one side close to the pn junction, which is referred to as the front side, and the incoming light enters the denuded back side. In this study, a systematic comparison between the two designs was conducted by means of computer simulation. Medici, a two-dimensional semiconductor device simulation tool, was utilized for this purpose. The 0.6 μm wavelength, the peak value for the AM-1.5 illumination, was chosen for the incident photons, and the minority-carrier recombination lifetime (τ), a key indicator of the Si substrate quality, was the main variable in the simulation on a p-type 150 μm thick Si substrate. Qualitatively, minority-carrier recombination affected the short circuit current (Isc) but not the opencircuit voltage (Voc). The latter was most affected by series resistance associated with the electrode locations. Quantitatively, when τ ≥ 500 μs, the simulation yielded the solar cell power outputs of 20.7 mW·cm−2 and 18.6 mW·cm−2, respectively, for the front-lit and back-lit cells, a reasonable 10 % difference. However, when τ < 500 μs, the difference was 20 % or more, making the back-lit design less than competitive. We concluded that the back-lit design, despite its inherent benefits, is not suitable for a broad range of Si solar cells but may only be applicable in the high-end cells where float-zone (FZ) or magnetic Czochralski (MCZ) Si crystals of the highest quality are used as the substrate.

Reactive Ion Etching (RIE) and wet etching are employed in existing texturing processes to fabricate solar cells. Laser etching is used for particular purposes such as selective etching for grooves. However, such processes require a higher level of cost and longer processing time and those factors affect the unit cost of each process of fabricating solar cells. As a way to reduce the unit cost of this process of making solar cells, an atmospheric plasma source will be employed in this study for the texturing of crystalline silicon wafers. In this study, we produced the atmospheric plasma source and examined its basic properties. Then, using the prepared atmospheric plasma source, we performed the texturing process of crystalline silicon wafers. The results obtained from texturing processes employing the atmospheric plasma source and employing RIE were examined and compared with each other. The average reflectance of the specimens obtained from the atmospheric plasma texturing process was 7.88 %, while that of specimens obtained from the texturing process employing RIE was 8.04 %. Surface morphologies of textured wafers were examined and measured through Scanning Electron Microscopy (SEM) and similar shapes of reactive ion etched wafers were found. The Power Conversion Efficiencies (PCE) of the solar cells manufactured through each process were 16.97 % (atmospheric plasma texturing) and 16.29% (RIE texturing).

The BCBJ (Back Contact and Back Junction) or back-lit solar cell design eliminates shading loss by placing the pn junction and metal electrode contacts all on one side that faces away from the sun. However, as the electron-hole generation sites now are located very far from the pn junction, loss by minority-carrier recombination can be a significant issue. Utilizing Medici, a 2-dimensional semiconductor device simulation tool, the interdependency between the substrate thickness and the minority-carrier recombination lifetime was studied in terms of how these factors affect the solar cell power output. Qualitatively speaking, the results indicate that a very high quality substrate with a long recombination lifetime is needed to maintain the maximum power generation. The quantitative value of the recombination lifetime of minority-carriers, i.e., electrons in p-type substrates, required in the BCBJ cell is about one order of magnitude longer than that in the front-lit cell, i.e., 5 × 10−4 sec vs. 5 × 10−5 sec. Regardless of substrate thickness up to 150 μm, the power output in the BCBJ cell stays at nearly the maximum value of about 1.8 × 10−2 W·cm−2, or 18 mW·cm−2, as long as the recombination lifetime is 5 × 10−4 s or longer. The output power, however, declines steeply to as low as 10 mW·cm−2 when the recombination lifetime becomes significantly shorter than 5 × 10−4 sec. Substrate thinning is found to be not as effective as in the front-lit case in stemming the decline in the output power. In view of these results, for BCBJ applications, the substrate needs to be only mono-crystalline Si of very high quality. This bars the use of poly-crystalline Si, which is gaining wider acceptance in standard front-lit solar cells.

Ni nanoparticles (NPs)-graphitic carbon nanofiber (GCNF) composites were fabricated using an electrospinning method. The amounts of Ni precursor used as catalyst for the catalytic graphitization were controlled at 0, 2, 5, and 8 wt% to improve the photovoltaic performances of the nanoparticles and make them suitable for use as counter electrodes for dyesensitized solar cells (DSSCs). As a result, Ni NPs-GCNF composites that were fabricated with 8 wt% Ni precursors showed a high circuit voltage (0.73 V), high photocurrent density (14.26 mA/cm2), and superb power-conversion efficiency (6.72 %) when compared to those characteristics of other samples. These performance improvements can be attributed to the reduced charge transport resistance that results from the synergetic effect of the superior catalytic activity of Ni NPs and the efficient charge transfer due to the formation of GCNF with high electrical conductivity. Thus, Ni NPs-GCNF composites may be used as promising counter electrodes in DSSCs.

Ni nanoparticles (NPs)-graphitic carbon nanofiber (GCNF) composites were fabricated using an electrospinning method. The amounts of Ni precursor used as catalyst for the catalytic graphitization were controlled at 0, 2, 5, and 8 wt% to improve the photovoltaic performances of the nanoparticles and make them suitable for use as counter electrodes for dyesensitized solar cells (DSSCs). As a result, Ni NPs-GCNF composites that were fabricated with 8 wt% Ni precursors showed a high circuit voltage (0.73 V), high photocurrent density (14.26 mA/cm2), and superb power-conversion efficiency (6.72 %) when compared to those characteristics of other samples. These performance improvements can be attributed to the reduced charge transport resistance that results from the synergetic effect of the superior catalytic activity of Ni NPs and the efficient charge transfer due to the formation of GCNF with high electrical conductivity. Thus, Ni NPs-GCNF composites may be used as promising counter electrodes in DSSCs.

본 연구에서는, F4-ZnPc 광활성층 기반의 저분자 유기태양전지의 성능을 최적화 하기 위해서 다 양한 조건의 홀이동층과 전자이동층을 조합하는 연구를 진행하였다. BF-DPB 호스트 유기물에 C60F36 또 는 NDP9 도펀트를 도핑한 조합을 홀이동층으로 사용하였고, 전자이동층으로는 W2(hpp)4가 도핑된 C60 또는 순수 C60/Bphen 물질을 사용하였다. 다양한 홀/전자이동층의 조합은 유기태양전지의 단락전류밀도와 fill factor, 효율에 영향을 끼치는 것을 관찰할 수 있었다.

With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance (Rs) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance (Rs) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance (Rs) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance (Rs) based on the light I-V curves.

Octahedral Co3O4/carbon nanofiber (CNF) composites are fabricated using electrospinning and hydrothermal methods. Their morphological characteristics, chemical bonding states, and electrochemical properties are used to demonstrate the improved photovoltaic properties of the samples. Octahedral Co3O4 grown on CNFs is based on metallic Co nanoparticles acting as seeds in the CNFs, which seeds are directly related to the high performance of DSSCs. The octahedral Co3O4/CNFs composites exhibit high photocurrent density (12.73 mA/m2), superb fill factor (62.1 %), and excellent power conversion efficiency (5.61 %) compared to those characteristics of commercial Co3O4, conventional CNFs, and metallic Co-seed/CNFs. These results can be described as stemmnig from the synergistic effect of the porous and graphitized matrix formed by catalytic graphitization using the metal cobalt catalyst on CNFs, which leads to an increase in the catalytic activity for the reduction of triiodide ions. Therefore, octahedral Co3O4/CNFs composites can be used as a counter electrode for Pt-free dye-sensitized solar cells.

Carbon nanofiber (CNF) composites coated with spindle-shaped Fe2O3 nanoparticles (NPs) are fabricated by a combination of an electrospinning method and a hydrothermal method, and their morphological, structural, and chemical properties are measured by field-emission scanning electron microscopy, transmission electron microscopy, Xray diffraction, and X-ray photoelectron spectroscopy. For comparison, CNFs and spindle-shaped Fe2O3 NPs are prepared by either an electrospinning method or a hydrothermal method, respectively. Dye-sensitized solar cells (DSSCs) fabricated with the composites exhibit enhanced open circuit voltage (0.70 V), short-circuit current density (12.82 mA/cm2), fill factor (61.30%), and power conversion efficiency (5.52%) compared to those of the CNFs (0.66 V, 11.61 mA/cm2, 51.96%, and 3.97%) and spindle-shaped Fe2O3 NPs (0.67 V, 11.45 mA/cm2, 50.17%, and 3.86%). This performance improvement can be attributed to a synergistic effect of a superb catalytic reaction of spindle-shaped Fe2O3 NPs and efficient charge transfer relative to the one-dimensional nanostructure of the CNFs. Therefore, spindle-shaped Fe2O3-NPcoated CNF composites may be proposed as a potential alternative material for low-cost counter electrodes in DSSCs.

We prepared polymethyl methacrylate (PMMA) beads with a particle size of 80 nm to improve the energy conversion efficiency (ECE) by increasing the effective surface area and the dye absorption ability of the working electrodes (WEs) in a dye sensitized solar cell (DSSC). We prepared the TiO2 layer with PMMA beads of 0.0~1.0 wt%; then, finally, a DSSC with 0.45 cm2 active area was obtained. Optical microscopy, transmission electron microscopy, field emission scanning electron microscopy, and atomic force microscopy were used to characterize the microstructure of the TiO2 layer with PMMA. UV-VIS-NIR was used to determine the optical absorbance of the WEs with PMMA. A solar simulator and a potentiostat were used to determine the photovoltaic properties of the PMMA-added DSSC. Analysis of the microstructure showed that pores of 200 nm were formed by the decomposition of PMMA. Also, root mean square values linearly increased as more PMMA was added. The absorbance in the visible light regime was found to increase as the degree of PMMA dispersion increased. The ECE increased from 4.91% to 5.35% when the amount of PMMA beads added was increased from 0.0 to 0.4 wt%. However, the ECE decreased when more than 0.6 wt% of PMMA was added. Thus, adding a proper amount of PMMA to the TiO2 layer was determined to be an effective method for improving the ECE of a DSSC.

Co-embedded graphitic porous carbon nanofibers(Co-GPCNFs) are synthesized by using an electrospinning method. Their morphological, structural, electrochemical, and photovoltaic properties are investigated. To obtain the optimum condition of Co-GPCNFs for dye-sensitized solar cells(DSSCs), the amount of cobalt precursor in an electrospinning solutuion are controlled to be 0 wt%(conventional CNFs), 1 wt%(sample A), and 3 wt%(sample B). Among them, sample B exhibited a high degree of graphitization and porous structure compared to conventional CNFs and sample A, which result in the performance improvement of DSSCs. Therefore, sample B showed a high current density(JSC, 12.88 mA/cm2) and excellent power conversion efficiency(PCE, 5.33 %) than those of conventional CNFs(12.00 mA/cm2, 3.78 %). This result can be explained by combined effects of the increased contact area between the electrode and elecytolyte caused by improved porosity and the increased conductivity caused by the formation of a high degree of graphitization. Thus, the Co-GPCNFs may be used as a promising alternative of Pt-free counter electrode in DSSCs.

For rear metallization with Al paste, Al back contacts require good passivation, high reflectance, and a processing temperature window compatible with the front metal. In this paper, the effect of the firing ambient during the metallization process on the formation of Al rear metal was investigated. We chose three different gases as ambient gases during the firing process. Using SEM, we observed the formation of a back surface field in N2, O2, and Air ambients. To determine the effect of the ambient on Voc, the suns-Voc tool was used. In this study, we described the mechanism of burn-out of organic materials in Al paste during the firing process. The oxygen ambient plays an important role in the burn-out process. We calculated the efficiency with obtained the back surface recombination velocities using PC1D simulation. It was found that the presence of oxygen during the firing process influenced the uniform back surface field because the organic materials in the Al paste were efficiently burned out during heating. The optimized temperature with oxygen flow shows an absolute efficiency of 19.1% at PC1D simulation.

유기태양전지의 투명전극으로서 기존의 값비싸고 깨지기 쉬운 Indium Tin Oxide (ITO) 전극을 대체하고자, 전도성 고분자인 poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)를 적용하였다. 솔벤트의 도핑 농도에 따른 PEDOT:PSS 박막의 전기 전도도와 표면 거칠기의 특성 변화를 관찰하고, 그 결과가 PEDOT:PSS를 투명전극으로 사용한 유기태양전지의 특성에 미치는 영향을 연구하였다. PEDOT:PSS의 솔벤트 농도가 증가함에 따라, 박막의 표면 거칠기가 증가하고, 이는 유기태양전지의 단락전류의 변화를 야기했다. 또한, 소자의 홀 이동층이 얇아짐에 따라 광활성층의 단파장영역의 광흡수가 증가하는 것을 관찰할 수 있었다.