The numerical calculation was carried out using OmniCADDⓇ HCS Hydraulic Calculation Software to certify if flow velocities in pipes reduced in diameter were satisfied with fire codes for a dry system of underground parking area in apartment complex. The design pressure and flow rate for the dry system were 4.3 bar and 1633.8 lpm. The maximum discharge pressure and flow rate of sprinklers were 2.2 bar and 118.2 lpm. The maximum flow velocities in main pipe, branch line and other pipe of the dry system were 1.5 m/s, 5.0 m/s and 3.5 m/s. The design propriety could be clearly certified by satisfying with fire codes related to flow velocities for the pipe network of the dry system.

EBR-II사용후핵연료의 파이로건식처리공정에 의해 발생된 우라늄의 순도에 대한 포괄적인 분석을 수행하였다. 분석결과를 미국 아이다호 국립연구소 및 한국원자력연구원의 협력과제 하에서 한국과 미국의 저준위 폐기물 기준으로 비교하였다. 미국의 저준위 폐기물 기준은 우라늄 동위원소를 포함하지 않으나, 한국의 경우는 포함하는 것으로 조사되었다. 분석결과 EBR-II 우라늄 생성물 내에서 저준위 기준을 초과하는 유일한 알파 핵종은 우라늄 동위원소가 아니라 Pu-239였다. 생성물 내의 Pu 오염은 개량된 염증류공정을 통한 예비실험 결과 획기적으로 줄일 수 있음을 알 수 있었으며, 보다 공정을 개선 시킨다면 제안된 기술을 이용하여 미국의 저준위 기준을 만족시킬 수 있을 것으로 판단된다

We report on the capacitively coupled O2 plasma etching of PMMA and polycarbonate (PC) with a diffusion pump. Plasma process variables were process pressure and CCP power at 5 sccm O2 gas flow rate. Characterization was done in order to analyze etch rate, etch selectivity, surface roughness, and morphology using stylus surface profilometry and scanning electron microscopy. Self bias decreased with increase of process pressure in the range of 25~180 mTorr. We found an important result for optimum pressure for the highest etch rate of PMMA and PC, which was 60 mTorr. PMMA and PC had etch rates of 0.46 and 0.28 μm/min under pressure conditions, respectively. More specifically, etch rates of the materials increased when the pressure changed from 25 mTorr to 60 mTorr. However, they reduced when the pressure increased further after 60 mTorr. RMS roughnesses of the etched surfaces were in the range of 2.2~2.9 nm. Etch selectivity of PMMA to a photoresist was ~1.5:1 and that of PC was ~0.9:1. Etch rate constant was about 0.04 μm/minW and 0.02 μm/minW for PMMA and PC, respectively, with the CCP power change at 5 sccm O2 and 40 mTorr process pressure. PC had more erosion on the etched sidewall than PMMA did. The OES data showed that the intensity of the oxygen atomic peak (777.196 nm) proportionally increased with the CCP power.

A study on the dry beneficiation of sericite occurring in the Daehyun Mine of the Republic of Korea region as performed by applying selective grinding and air classification techniques. Quartz and sericite occurred in the raw ore as major components. The results of liberation using a ball mill and an impact mill showed that the contents of R2O were increased while SiO2 was decreased in proportion to decreasing particle size. According to the XRD, XRF analysis and the EDS of SEM analysis, the ball mill gave a better grade product in R2O content than the impact mill when the particle size was the same. When the raw ore was ground by the impact mill with arotor speed 57.6 m/sec and then followed by 15,000rpm classification using an air classifier, the chemical composition of the over flowed product was 49.65wt% SiO2, 32.15wt% Al2O3, 0.13wt% Fe2O3, 10.37wt% K2O, and 0.14wt% Na2O. This result indicates that the R2O contents were increased by 49.5% compared to that of the raw ore. From these results described above, it is suggested that hard mineral such as Quartz little ground by selective grinding using impact mill whereas soft mineral such as sericite easily ground to small size. As a result of that hard minerals can be easily removed from the finely ground sericite by air classification and the R2O grade of thus obtained concentrate was improved to higher than 10wt% which can be used for ceramics raw materials.

This study investigates GaAs dry etching in capacitively coupled BCl3/N2 plasma at a low vacuum pressure (>100 mTorr). The applied etch process parameters were a RIE chuck power ranging from 100~200W on the electrodes and a N2 composition ranging from 0~100% in BCl3/N2 plasma mixtures. After the etch process, the etch rates, RMS roughness and etch selectivity of the GaAs over a photoresist was investigated. Surface profilometry and field emission-scanning electron microscopy were used to analyze the etch characteristics of the GaAs substrate. It was found that the highest etch rate of GaAs was 0.4μm/min at a 20 % N2 composition in BCl3/N2 (i.e., 16 sccm BCl3/4 sccm N2). It was also noted that the etch rate of GaAs was 0.22μm/min at 20 sccm BCl3 (100 % BCl3). Therefore, there was a clear catalytic effect of N2 during the BCl3/N2 plasma etching process. The RMS roughness of GaAs after etching was very low (~3nm) when the percentage of N2 was 20 %. However, the surface roughness became rougher with higher percentages of N2.

This study investigated dry etching of acrylic in capacitively coupled SF6, SF6/O2 and SF6/CH4 plasma under a low vacuum pressure. The process pressure was 100 mTorr and the total gas flow rate was fixed at 10 sccm. The process variables were the RIE chuck power and the plasma gas composition. The RIE chuck power varied in the range of 25~150 W. SF6/O2 plasma produced higher etch rates of acrylic than pure SF6 and O2 at a fixed total flow rate. 5 sccm SF6/5 sccm O2 provided 0.11μm/min and 1.16μm/min at 25W and 150W RIE of chuck power, respectively. The results were nearly 2.9 times higher compared to those at pure SF6 plasma etching. Additionally, mixed plasma of SF6/CH4 reduced the etch rate of acrylic. 5 sccm SF6/5 sccm CH4 plasma resulted in 0.02μm/min and 0.07μm/min at 25W and 150W RIE of chuck power. The etch selectivity of acrylic to photoresist was higher in SF6/O2 plasma than in pure SF6 or SF6/CH4 plasma. The maximum RMS roughness (7.6 nm) of an etched acrylic surface was found to be 50% O2 in SF6/O2 plasma. Besides the process regime, the RMS roughness of acrylic was approximately 3~4 nm at different percentages of O2 with a chuck power of 100W RIE in SF6/O2 plasma etching.