In this study, a multifunctional ophthalmic lens material with an electromagnetic shielding effect, high oxygen permeability, and high water content is tested, and its applicability is evaluated. Metal oxide nanoparticles are applied to the ophthalmic lens material for vision correction to shield harmful electromagnetic waves; the pyridine group is used to improve the antibacterial effect; and silicone substituted with urethane and acrylate is employed to increase the oxygen permeability and water content. In addition, multifunctional tinted ophthalmic lens materials are studied using lens materials with an excellent antibacterial effect (2,6-difluoropyridine, 2-fluoro-4-pyridinecarboxylic acid) and functional (UV protection, high wettability) lens materials (2,4-dihydroxy benzophenone, 2-hydroxy-4-(methacryloyloxy)benzophenone). To solve problems such as air bubbles generated during the polymerization process for the manufacturing and turbidity of the lens surface, polymerization conditions in which the defect rate is minimized are determined. The results show that the polymerization temperature and time are most appropriate when they are 110 oC and 40 minutes, respectively. The optimum injection amount of the polymerization solution is 350 ms. The turbid phenomenon that appears in lens processing is improved by 10 to 95% according to the test time and conditions.

The property changes of 18, 14, and 8K green gold alloys for jewelry are observed by adding 0.0, 3.0, and 5.0 wt% of indium (In), respectively. To check the composition of the alloys, an energy dispersive spectroscopy (EDS) analysis is conducted. Color and microstructure analysis is executed through bare-eye, macro camera, UV-VIS-NIR-colormeter, and optical microscope. The melting point, wetting angle, and hardness are measured using TGA-DTA, a wetting angle tester, and a Vickers hardness tester. The EDS analysis result demonstrates that each of the green gold alloys was manufactured with purposed contents. The color analysis result shows that the color of the alloys is similar to the color of the conventional 4 wt%- Cd 18K green gold, and the green color improves as the In content increases. The micro structure analysis result demonstrates that grain refinement improves as the amount of In increases. Enhancements in the melting point, wettability, and Vickers hardness changes appear as the In content increases and Au content decreases. The hardness is up to 260, which implies good durability. Therefore, the results suggest that the proposed 18, 14, and 8K In-added green gold alloys enhance the properties of jewelry products with regard to the green color, castability, and durability.

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/ SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below 350℃. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and H2O increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., Al2O3) that can sufficiently prevent the diffusion of impurities into the channel.

The properties of 18 K red gold solder alloys were investigated by changing the content of In up to 10.0 wt% in order to replace the hazardous Cd element. Cupellation and energy dispersive X-ray spectroscopy (EDS) were used to check the composition of each alloy, and FE-SEM and UV-VIS-NIR-Colormeter were employed for microstructure and color characterization. The melting temperature, hardness, and wetting angle of the samples were determined by TGA-DTA, the Vickers hardness tester, and the Wetting angle tester. The cupellation result confirmed that all the samples had 18K above 75.0wt%-Au. EDS results showed that Cu and In elements were alloyed with the intended composition without segregation. The microstructure results showed that the amount of In increased, and the grain size became smaller. The color analysis revealed that the proposed solders up to 10.0 wt% In showed a color similar to the reference 18 K substrate like the 10.0 wt% Cd solder with a color difference of less than 7.50. TGA-DTA results confirmed that when more than 5.0 wt% of In was added, the melting temperature decreased enough for the soldering process. The Vickers hardness result revealed that more than 5.0 wt% In solder alloys had greater hardness than 10.0 wt% Cd solder, which suggested that it was more favorable in making a wire type solder. Moreover, all the In solders showed a lower wetting angle than the 10.0 wt% Cd solder. Our results suggested that the In alloyed 18 K red gold solders might replace the conventional 10.0 wt% Cd solder with appropriate properties for red gold jewelry soldering.

본 연구에서는 0.5, 1.0, 1.5 wt%의 TiO2를 함유하는 인듐-티타늄 수산화물을 졸 및 염기 첨가에 의해 얻었고, 200oC와 500oC에서 겔화 과정을 통해 ITiO(Indium Titanate Oxide)를 얻었다. 200oC에서 겔화 과정 후 얻어지는 ITiO 입자가 작아서 조밀성이 있는 ITiO 타겟을 제조하였다. 0.5, 1.0, 1.5 wt%의 TiO2를 함유하는 ITiO 타겟을 스퍼터링하여 ITiO 박막을 유리판위에 제작하여 비저항, 전하 이동도, 캐리어 농도를 조사하였다. 이들 박막 중에서 산소 조성이 0.4 %인 조건에서 0.5 wt% 중량% TiO2를 함유하는 ITiO 타겟으로부터 제작된 ITiO 박막이 가장 낮은 비저항, 가장 큰 전하이동도 및 가장 낮은 캐리어 농도를 보임을 알 수 있었고, 얻어진 ITiO 박막의 광투과율을 측정하여 적외선 영역에서 광투과율이 ITO(Indium Tin Oxide) 박막에 비해 현저히 증가함을 발견하였다.

In order to replace 14K white gold alloys, the properties of 5K white gold alloys (Au20-Ag80) were investigated by changing the contents of In (0.0-10.0 wt%). Energy dispersive X-ray spectroscopy (EDS) was used to determine the precise content of alloys. Properties of the alloys such as hardness, melting point, color difference, and corrosion resistance were determined using Vickers Hardness test, TGA-DTA, UV-VIS-NIR-colorimetry, and salt-spray tests, respectively. Wetting angle analysis was performed to determine the wettability of the alloys on plaster. The results of the EDS analysis confirmed that the Au-Ag-In alloys had been fabricated with the intended composition. The results of the Vickers hardness test revealed that each Au-Ag-In alloy had higher mechanical hardness than that of 14K white gold. TGA-DTA analysis showed that the melting point decreased with an increase in the In content. In particular, the alloy containing 10.0 wt% In showed a lower melting temperature (> 70 °C) than the other alloys, which implied that alloys containing 10.0 wt% In can be used as soldering materials for Au-Ag-In alloys. Color difference analysis also revealed that all the Au-Ag-In alloys showed a color difference of less than 6.51 with respect to 14K white gold, which implied a white metallic color. A 72-h salt-spray test confirmed that the Au-Ag- In alloys showed better corrosion resistance than 14K white gold alloys. All Au-Ag-In alloys showed wetting angle similar to that of 14K white gold alloys. It was observed that the 10.0 wt% In alloy had a very small wetting angle, further confirming it as a good soldering material for white metals. Our results show that white 5K Au-Ag-In alloys with appropriate properties might be successful substitutes for 14K white gold alloys.

The micron-sized indium zinc tin oxide (IZTO) particles were prepared by spray pyrolysis from aqueous precursor solution for indium, zinc, and tin and organic additives such as citric acid (CA) and ethylene glycol (EG) were added to aqueous precursor solution for indium, zinc, and tin. The obtained IZTO particles prepared by spray pyrolysis from the aqueous solution without organic additives had spherical and filled morphologies, whereas the IZTO particles obtained with organic additives had more hollow and porous morphologies. The micron-sized IZTO particles with organic additives were changed fully to nano-sized IZTO particles, whereas the micron-sized IZTO particles without organic additives were not changed fully to nano-sized IZTO particle after post-treatment at 700 °C for 2 hours and wet-ball milling for 24 hours. Surface resistances of micron-sized IZTO’s before post-heat treatment and wet-ball milling were much higher than those of nano-sized IZTO’s after post-heat treatment and wet-ball milling. From IZTO with composition of 80 wt. % In2O3, 10 wt. % ZnO, and 10 wt. % SnO2 which showed a smallest surface resistance IZTO after post-heat treatment and wet-ball milling, thin films were deposited on glass substrates by pulsed DC magnetron sputtering, and the electrical and optical properties were investigated.

마이크론 크기를 가지는 ITO(indium tin oxide) 입자들은 인듐과 틴의 수용성 전구체들과 유기 첨가제를 분무 열분해하여 얻었다. 유기 첨가제로서는 에틸렌글리콜과 시트르산을 이용하였다. 분무 열분해 시 에틸렌글리콜과 시트르산과 같은 유기첨가제를 첨가하지 않고 얻어진 ITO 입자들은 구형이며 속이 꽉찬 형태를 가지는데 비해 유기 첨가제를 첨가하여 분무 열분해를 하면 얻어지는 ITO 입자들은 유기 첨가제의 양이 증가 할수록 껍질이 얇고 다공성이 증대된 중공 입자가 얻어진다. 유기첨가제를 첨가하지 않고 분무 열분해를 통해 얻어지는 마이크론 크기를 가지는 ITO는 700℃에서 두 시간 동안의 후소성과 24 시간동안의 습식 볼밀링에 의해 나노 크기의 ITO로 전환되지 않으나, 유기첨가제를 첨가하고 분무 열분해를 통해 얻어지는 마이크론 크기를 가지는 ITO는 700℃에서 두 시간 동안의 후소성과 24 시간 동안의 습식 볼밀링에 의해 나노 크기의 ITO로 쉽게 전환되었다. 응집된 나노 크기의 ITO의 일차 입자의 크기를 Debye-Scherrer 식에 의해 계산하였고 ITO 입자를 압축하여 만든 펠렛의 표면저항을 측정하였다.

In this paper, we studied a p-type reflector based on indium tin oxide (ITO) for vertical-type ultraviolet light-emitting diodes (UV LEDs). We investigated the reflectance properties with different deposition methods. An ITO layer with a thickness of 50 nm was deposited by two different methods, sputtering and e-beam evaporation. From the measurement of the optical reflection, we obtained 70% reflectance at a wavelength of 382 nm by means of sputtering, while only 30% reflectance resulted when using the e-beam evaporation method. Also, the light output power of a 1mm×1mm vertical chip created with the sputtering method recorded a twofold increase over a chip created with e-beam evaporation method. From the measurement of the root mean square (RMS), we obtained a RMS value 1.3 nm for the ITO layer using the sputtering method, while this value was 5.6 nm for the ITO layer when using the e-beam evaporation method. These decreases in the reflectance and light output power when using the e-beam evaporation method are thought to stem from the rough surface morphology of the ITO layer, which leads to diffused reflection and the absorption of light. However, the turn-on voltage and operation voltage of the two samples showed identical results of 2.42 V and 3.5 V, respectively. Given these results, we conclude that the two ITO layers created by different deposition methods showed no differences in the electric properties of the ohmic contact and series resistance.

In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at 1000˚C for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at 1500˚C for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

Nano-indium-coated ZnO:In thick films were prepared by a hydrothermal method. ZnO:In gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties of the gas sensors were investigated for hydrocarbon gas. The effects of the indium concentration of the ZnO:In gas sensors on the structural and morphological properties were investigated by X-ray diffraction and scanning electron microscopy. XRD patterns revealed that the ZnO:In with wurtzite structure was grown with (1 0 0), (0 0 2), and (1 0 1) peaks. The quantity of In coating on the ZnO surface increased with increasing In concentration. The sensitivity of the ZnO:In sensors was measured for 5 ppm CH4 gas and CH3CH2CH3 gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to CH4 gas and CH3CH2CH3 gas of the ZnO:In sensors was observed at the In 6 wt%. The response and recovery times of the 6 wt% indiumcoated ZnO:In gas sensors were 19 s and 12 s, respectively.

In this research, the indium dissolution properties of the waste LCD panel powders were investigated as a function of milling time fabricated by high-energy ball milling (HEBM) process. The particle morphology of waste LCD panel powders changed from sharp and irregular shape of initial cullet to spherical shape with an increase in milling time. The particle size quickly decreased to 15 until the first minute, then decreased gradually about 6 with presence of agglomerated particles after 5 minutes, which increased gradually reaching a uniform size of 13 consist of agglomerated particles after 30 minutes. The glass recovery, after dissolution, was over 99% at initial cullet, which decreased to 90.1 and 78.6% with increasing milling time of 1 and 30 minute respectively, due to a loss in remaining powder of the surface ball and jar, as well as the filter paper. The dissolution amount of indium out of the initial cullet was 208 ppm before milling, turning into 223 ppm for the mechanically milled powder after 1 minute, and nearly 146~125 ppm with further increase in milling time because of the reaction surface decrease of powders due to agglomeration. With this process, maximum dissolving indium amount (223 ppm) could be achieved at a particle size of 15 with 1 minute of milling.

Indium doped SnO2 thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the SnO2 were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the SnO2:In by X-ray diffraction showed a (110) dominant SnO2 peak. The size of SnO2 particles ranged from 0.05 to 0.1 μm, and SnO2 particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped SnO2 thick films for gas sensors was about 20 μm, as confirmed by cross sectional SEM image. Sensitivity of the SnO2:In gas sensor to 2000 ppm of CO2 gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to CO2 gas and H2S gas of the indium-doped SnO2 thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped SnO2 gas sensors to CO2 gas were attributed to the increase of oxygen vacancies and surface area in the SnO2:In. The SnO2:In gas sensors showed good selectivity to CO2 gas.

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO)as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based light-emitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beamevaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers werein excess of 80% throughout the visible region of the spectrum. Specific contact resistances of 3.4×10−4,1.2×10−4, 9.2×0−5, and 3.6×10−5Ω·cm2 for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. Theforward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15V lower andwas increased by 38.9%, respectively, at a forward current of 20mA compared to that of a standard GaN LEDwith an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

Density functional theory was utilized to investigate the growth of an indium nanowire on a Si (001) buckled surface. A site between the edge of two Si dimers is most favorable when the first In atom is adsorbed on the surface at an adsorption energy level of 2.26 eV. The energy barriers for migration from other sites to the most favorable site are low. When the second In atom is adsorbed next to the first In atom to form an In dimer perpendicular to the Si dimer row, the adsorption energy is the highest among all adsorption sites. The third In atom prefers either of the sites next to the In dimer along the In dimer direction. The fourth In atom exhibited the same tendency showed by the second atom. The second and fourth In adsorption energy levels are higher than the first and third levels as the In atoms consume the third valence electron by forming In dimers. Therefore, the In nanowire grows perpendicular to the Si dimer row on the Si (001) surface, as it satisfies the bonding of the three valence electrons of the In atoms.

The objectives of this study were the development of a synthesis technique for highly active nanosized ITO powder and the understanding of the reaction mechanisms of the ITO precursors. The precipitation and agglomeration phenomena in ITO and precursors are very sensitive to reaction temperature, pH, and coexisting ion species. Excessive ion and ions had a negative effect an synthesizing highly active powders. However, with a relevant stabilizing treatment the shape and size of ITO and precursors could be controlled and high density sintered products of ITO were obtained. By applying the reprecipitation process (or stabilization technique), highly active ITO and powders were synthesized. Sintering these powders at for 5 hours produced 97% dense ITO bodies.