In this study, two alignment methods were used to create a Fringe-Field Switching (FFS) mode liquid crystal device using an organic thin film (polyimide: PI) as an alignment layer. In addition, the electro-optical (EO) characteristics of the liquid crystal device manufactured in this way were investigated to evaluate the feasibility of mass production application of the technology. In general, the photo-alignment method using unpolarized ultraviolet rays can obtain a relatively low pretilt angle, so a liquid crystal device in FFS mode, which is a driving mode of the liquid crystal device that reflects the characteristics of liquid crystal alignment, was manufactured, and the liquid crystal has a high reactivity with the alignment film. Considering this, nematic liquid crystal (NLC) was used. In addition, in order to improve the misalignment, it was observed whether more stable orientation occurred by irradiating ultraviolet rays for an additional 1 to 3 hours in the aligned state. As a result of the experiment, it was found that NLC alignment occurs through a photodecomposition reaction caused by unpolarized UV irradiation oblique to the PI surface. In addition to the existing orientation method, UV irradiation was used to achieve a more stable orientation state and stable V-T curve and response characteristics. With liquid crystal alignment completed, more stable orientation characteristics and EO characteristics at the mass production level were obtained through additional UV irradiation for 3 hours. This method can further stabilize the orientation stability caused by existing UV irradiation through an additional process.

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with a coplanar structure were fabricated to investigate the feasibility of their potential application in large size organic light emitting diodes (OLEDs). Drain currents, used as functions of the gate voltages for the TFTs, showed the output currents had slight differences in the saturation region, just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages of the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. After the application of a positive bias voltage stress for 50,000 s, the values of the threshold voltage of the coplanar structure TFTs were only slightly shifted, by 0.18 V, indicative of their stability. The coplanar structure TFTs were embedded in OLEDs and exhibited a maximum luminance as large as 500 nits, and their color gamut satisfied 99 % of the digital cinema initiatives, confirming their suitability for large size and high resolution OLEDs. Further, the image density of large-size OLEDs embedded with the coplanar structure TFTs was significantly enhanced compared with OLEDs embedded with conventional TFTs.

This paper proposes a mathematical model that can calculate the luminescence characteristics driven by alternating current (AC) power using the current-voltage-luminance (I-V-L) properties of organic light emitting devices (OLED) driven by direct current power. Fluorescent OLEDs are manufactured to verify the model, and I-V-L characteristics driven by DC and AC are measured. The current efficiency of DC driven OLED can be divided into three sections. Region 1 is a section where the recombination efficiency increases as the carrier reaches the emission layer in proportion to the increase of the DC voltage. Region 2 is a section in which the maximum luminous efficiency is stably maintained. Region 3 is a section where the luminous efficiency decreases due to excess carriers. Therefore, the fitting equation is derived by dividing the current density and luminance of the DC driven OLED into three regions, and the current density and luminance of the AC driven OLED are calculated from the fitting equation. As a result, the measured and calculated values of the AC driving I-V-L characteristics show deviations of 4.7% for current density, 2.9% for luminance, and 1.9% for luminous efficiency.

본 논문에서는 유연/인쇄 전자 기술을 활용해 고성능의 유기물 반도체 기반 트랜지스터를 개발하고, 이를 통해 인공지능용 반도체 및 폴리모픽 전자회로에 응용하기 위해 공액구조 고분자 반도체 소재의 광파 어닐링 방법에 따른 특성 향상 효과를 연구하였다. 일반적으로 열처리를 위해 가장 많이 활용되는 핫플레이트의 경우 반도체 소자 특성의 균일도 문제와 높은 온도 및 열-용량으로 인한 플라스틱 기판 사용의 제한, 긴 어닐링 시간 등의 문제로 인해 실제 산업에서 활용하는데 어려움이 있다. 이를 해결하기 위해 광파를 활용한 효과적인 유기물 반도체 필름의 열처리 공정을 개발함으로써 Roll-to-Roll 방식의 고속/대면적 인쇄 공정에 적합한 열처리 방법과 반도체 층 전체의 높은 결정화도 유도를 통한 성능 향상과 소자 균일도 개선을 위한 방법을 개발하였다.

New type of White-Light Emitting Diode (WOLED) that emits three primary colors of red, green and blue has been demonstrated. WOLED is properly laid out with emitting layers so that all three wavelengths of light can be emitted by using fit energy level, and the organic functional layer named white balanced layer (WBL) is introduced. As for the material used as WBL, the experiment used NPB that has electron blocking effect with its large LUMO value. The color purity of such WOLED can be easily adjusted through the adjustment of the number of electron carriers injected into light emitting layer. In this of study, color coordinate was (0.341, 0.424) and light emitting efficiency was 16.5 cd/A at current density 10 mA/cm2, so the WOLED demonstrated highly efficient characteristics of over commercial level.

Two different emitting compounds, 1-[1,1;3,1]Terphenyl-5-yl-6-(10-[1,1;3,1]terphenyl-5-ylanthracen-9-yl)-pyrene (TP-AP-TP) and Poly-phenylene vinylene derivative (PDY 132) were used to white OLED device. By incorporating adjacent blue and yellow emitting layers in a multi-layered structure, highly efficient white emission has been attained. The device was fabricated with a hybrid configuration structure: ITO/PEDOT (40 nm)/PDY-132 (8∼50 nm)/NPB (10 nm)/TP-AP-TP (30 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). After fixing TP-AP-TP thickness of 30 nm by evaporation, PDY-132 thickness varied with 8, 15, 35, and 50 nm by spin coating in device. The luminance efficiency of the white devices at 10 mA/cm2 were 2.93 cd/A∼6.55 cd/A. One of white devices showed 6.55 cd/A and white color of (0.290, 0.331).

4-Methyl-7-(10-phenyl-anthracen-9-yl)-chromen-2-one (PhAC), 4-Methyl-7-(10-naphthalen-1-yl-anthracen-9-yl)-chromen-2-one (1-NAC), 4-Methyl-7-(10-naphthalen-2-yl-anthracen-9-yl)-chromen-2-one (2-NAC), and 7-Anthracen-9-yl-4-methyl-chromen-2-one (AC) were synthesized through Suzuki aryl-aryl coupling reaction. Four compounds were used as emitting layer (EMLs) in non-doped OLEDs with the following structures: ITO/2-TNATA (60 nm)/NPB (15 nm)/EMLs (35 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). Non-doped devices showed luminescence efficiency of 2.14, 2.07, 1.52, and 1.12 cd/A at a current density of 10 mA/cm2.

New three emitting compounds, AK-1, AK-2 and AK-3 including diazocine moiety were synthesized through Suzuki-coupling reaction. Physical properties such as optical, electroluminescent properties were investigated. UV-visible spectrum of AK-1, AK-2 and AK-3 in film state showed maximum 392, 393 and 401 nm. PL spectrum of AK-1, AK-2 and AK-3 showed maximum emission wavelength of 472, 473 and 435 nm. Three compounds were used as EML in OLED device: ITO/2-TNATA (60 nm)/NPB (15 nm)/EML (35 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). AK-3 OLED device showed C.I.E value of (0.18, 0.26) and luminance efficiency of 0.51 cd/A at 10 mA/cm2. New derivatives including diazocine moiety were introduced as OLED emitting material and the EL efficiency was increased by the proper combination of core and side group.

4-methyl-7-(10-(pyren-1-yl)anthracen-9-yl)-2H-chromen-2-one (PAC), 7,7’-(anthracene-9,10-diyl)bis(4- methyl-2H-chromen-2-one) (CAC), 7-Anthracen-9-yl-4-methyl-chromen-2-one(AC), and 7-(naphthalen-1-yl)-2Hchromen-2-one (NC) were synthesized through Suzuki aryl-aryl coupling reaction. Optical and electroluminescence (EL) properties were evaluated by UV-visible absorption, photoluminescence (PL) spectra, and EL devices. Synthesized compounds were used as an emitting layer (EML) in non-doped device with the following structures: ITO/2-TNATA (60 nm)/NPB (15 nm)/synthesized compounds (35 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). Non-doped devices showed luminance efficiency (L.E.) of 1.38, 1.03, 1.12, and 0.39 cd/A at a current density of 10 mA/cm2.

7-(4-([1,1-biphenyl]-4-yl(9,9-dimethyl-9H-fluoren-2-yl)amino)phenyl)-4-methyl-2H-chromen-2-one (BPFA-C) including coumarin moiety was synthesized through Suzuki aryl-aryl coupling reaction. Optical and electrical properties were examined by UV-visible absorption spectra, PL spectra, and AC-2. UV-visible spectrum of BPFA-C in a film state showed maximum absorption wavelength of 367 nm. PL spectrum of BPFA-C show maximum emission wavelength of 511 nm. BPFA-C showed highly efficient luminescence property. EL spectrum of BPFA-C exhibited a maximum value of 504 nm and BPFA-C device provided luminescence efficiency of 4.59 cd/A, power efficiency of 3.17 lm/W, and CIE (x,y) of (0.25, 0.53) at a current density of 10 mA/cm².

본 연구에서는 SiO2 나노파티클-전도성 고분자 PEDOT:PSS 복합 구조 기반의 유기발광다이오 드용 내부 광추출 구조를 간단한 용액 공정으로 제작하였다. 또한, 다양한 농도의 SiO2 나노파티클을 PEDOT:PSS에 분산하여 그 구조를 확인하였고, 상부/하부 버퍼레이어의 도입이 내부 광추출 구조 형성에 미치는 영향에 관하여 알아보았다.

본 연구에서는 대기 중 용액공정으로 유기발광다이오드(OLED)를 구현하였으며, 발광재료로서 고분자와 저분자 가 혼합된 하이브리드 host 물질과 저분자 dopant를 사용하였고, 고분자 소재의 홀이동층과 저분자 소재의 전자이동층 을 사용하였다. 모든 유기층들을 대기 중에서 용액공정으로 스핀코팅 되었으며, 용액공정 기반 OLED의 효율 향상을 위 해서 발광층의 두께 및 열처리 공정의 최적화 조건에 대해서 살펴보았다.

유기 발광 다이오드(OLED)는 차세대 조명으로 많은 관심을 받고 있으며, 디스플레이로서의 상용화에 이미 성공하였고, 대체 조명 시장에까지 그 영역을 넓혀가고 있다. OLED의 급격한 기술 발전에도 불구하고, OLED의 유 기층/투명전극과 기판에서 발생하는 내부 전반사에 의해서 일반적인 OLED의 외부 광자 효율은 현재 20~30% 정도에 머무르고 있는 실정이다. 따라서, 고효율의 OLED의 구현을 위해서는 고성능의 광추출 구조의 개발이 절실히 필요하 다. 내부 광추출 구조를 소자에 적용하기 위해서는 많은 어려움이 있으며, 특히 소자의 누설전류를 방지하기 위해서 광추출 구조의 표면 거칠기를 최소화하는 것이 매우 중요하다. 본 연구에서는 ZnO 나노파티클-투명 고분자 복합 구 조의 광추출 구조를 쉬운 제작 방법으로 구현하였으며, 나노파티클의 분산에 따른 광추출 구조의 광학적 특성 및 표 면 구조의 영향에 대해서 알아보았다.

본 연구는 해양 미세조류에서 추출한 물질에 대한 광 발광(Photoluminescence) 측정 및 GC-MS 분석을 통해 유기발광다이오드 소자로 이용 가능한 물질을 탐색하고자 하였다. 국내에서 주로 서식하는 해양 미세조류 14종의 추출물을 분획으로 얻었으며 광 발광 측정 결과, Nitzschia denticula, Navicula cacellata, Nannochloropsis salina 총 3종의 추출물에서 광 발광 반응이 나타났다. 광 발광 반응을 보인 물질의 특성을 알아내기 위해 GC-MS로 분석하였으며, 그 결과 3종의 추출물이 imidazole, purine 및 quinoline기를 가진다는 것을 확인하였고, 이 계열의 물질들이 광 발광에 영향을 주는 것으로 판단된다.

본 연구에서는 발광층의 전자와 정공의 재결합 영역을 확인하고, 단계적 도핑구조를 이용하여 여기자들의 효율적인 분배를 통해 roll-off 효율을 감소시켜서 녹색 인광 유기발광다이오드의 수명 증가 를 나타냈다. 발광층 내 호스트는 양극성의 4,4,N,N'-dicarbazolebiphenyl (CBP)를 사용하여 전하의 이 동을 원활하게 하였다. 발광층을 네 구역으로 분할하여 각각 소자를 제작하였고, 네 구역의 도판트 농도 에 따라 발광효율과 수명 향상을 보였다. 이로써 발광층 내의 단계적 도핑구조를 이용하여 캐리어와 여 기자들이 원활하게 분배된 것을 확인하였다. 기준소자 대비 발광층의 도판트 농도를 5, 7, 11, 9% 순서 로 단계적 도핑구조를 적용한 device C의 수명이 약 73.70% 증가하였고, 휘도 효율은 51.10 cd/A와 외 부 양자 효율은 14.88%의 성능을 보였다.

본 연구에서는 전하 조절층을 이용하여 녹색 인광 유기발광다이오드의 효율의 향상을 나타냈다. 양극성의 4,4,N,N'-dicarbazolebiphenyl (CBP)를 호스트와 전하 조절층으로 사용하여 발광층 내에서 전하의 이동을 원활하게 할 수 있다. 게다가 전하 조절층의 삽입으로 엑시톤을 효과적으로 발광층 내에 제한하여, 삼중항-삼중항 소멸 현상을 억제할 수 있음을 확인하였다. 발광층의 전체 두께는 유지하고, 전하 조절층의 변화를 준 다섯 개의 소자를 제작하여 최적화된 전하 조절층의 두께를 이용한 Device D는 외부 양자 효율 16.22%와 휘도 효율 55.76 cd/A의 성능을 보였다.

본 연구에서 7,7'-(2,2'dimethoxy-1,1'-binaphthyl-3,3'-diyl) bis(4-(thiophen-2-yl) benzo[e] [1,2,5] thiadiazole (TBT) 라는 binaphthyl기를 기반으로 가지는 녹색 도판트 물질을 합성하였다. 추가적으로 인광 발광 물질인 iridium(III)bis[(4,6-di-fluoropheny)-pyridinato -N,C2]picolinate (FIrpic)을 홀 수송용 호스트 물질인 N,N'-dicarbazolyl-3,5-benzene (mCP)에 도핑하고, TBT와 bis(2-phenylquinolinato)-acetylacetonate iridium(III) (Ir(pq)2acac)를 전자 수송용 호스트 물질인 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi)에 도핑하여 백색 빛을 발광하는 white organic light emitting diode (OLED)를 제작하였다. TBT를 사용하여 제작한 white OLED의 최대발광 효율과 외부 양자 효율은 각각 5.94 cd/A 과 3.23%를 나타냄을 알 수 있었다. Commission Internationale de I'Eclairage (CIE) 색 좌표의 값은 1000 nit에서 (0.34, 0.36)을 띄면서 순백색을 구현함을 확인하였다.

New organic light-emitting diodes with structure of indium-tin-oxide[ITO]/N,N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolvlamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-poly-aminophenyl) cyclohexane[TAPC]/bis(10-hydroxy-benzo(h)quinolinato)beryllium[Bebq2]/Bebq2:iridium(III)bis(2-phenylquinoline-N,C2')acetylacetonate[(pq)2Ir(acac)]/ET-137[electron transport material from SFC Co]/LiF/Al using the selective doping of 5%-(pq)2Ir(acac) in a single Bebq2 host in the two wavelength (green, orange) emitter formation were proposed and characterized. In the experiments, with a 300Å-thick undoped emitter of Bebq2, two kinds of devices with the doped emitter thicknesses of 20Å and 40Å in the Bebq2:(pq)2Ir(acac) were fabricated. The device with a 20Å-thick doped emitter is referred to as "D-1" and the device with a 4Å-thick doped emitter is referred to as "D-2". Under an applied voltage of 9V, the luminance of D-1 and D-2 were 7780 cd/m2 and 6620 cd/m2, respectively. The electroluminescent spectrum of each fabricated device showed peak emissions at the same two wavelengths: 508 nm and 596 nm. However, the relative intensity of 596 nm to 508 nm at those wavelengths was higher in the D-2 than in the D-1. The D-1 and D-2 devices showed maximum current efficiencies of 5.2 cd/A and 6.0 cd/A, and color coordinates of (0.31, 0.50) and (0.37, 0.48) on the Commission Internationale de I'Eclairage[CIE] chart, respectively.