Surface plasmon resonance is the resonant oscillation of conduction electrons at the interface between negative and positive permittivity material stimulated by incident light. In particular, when light transmits through the metallic microhole structures, it shows an increased intensity of light. Thus, it is used to increase the efficiency of devices such as LEDs, solar cells, and sensors. There are various methods to make micro-hole structures. In this experiment, micro holes are formed using a wet chemical etching method, which is inexpensive and can be mass processed. The shape of the holes depends on crystal facets, temperature, the concentration of the etchant solution, and etching time. We select a GaAs(100) single crystal wafer in this experiment and satisfactory results are obtained under the ratio of etchant solution with H2SO4:H2O2:H2O = 1:5:5. The morphology of micro holes according to the temperature and time is observed using field emission - scanning electron microscopy (FE-SEM). The etching mechanism at the corners and sidewalls is explained through the configuration of atoms.

The expansion of the display market could mass-produce the product which becomes the super-slim and ultra-lighting according to the demand of customer. This change etched the mobile display panel in order to make the thin glass. The wet etching refers to the process of removing selectively the unnecessary part in order to form the circuit pattern among the semi-conductor or the LCD manufacturing process. The wet etching can progress the etching about a large amount at a time but the thickness of glass is not smooth or not etched according to the process condition. In this study, the defect factor in the etching process tries to be analyze. The experimental design was established and the processing condition was optimized in order to minimize under non-etch part generation by the experiment of design.

The relationship the between electrical properties and surface roughness (Ra) of a wet-etched silicon wafer were studied. Ra was measured by an alpha-step process and atomic force microscopy (AFM) while varying the measuring range 10×10, 40×40, and 1000×1000μm. The resistivity was measured by assessing the surface resistance using a four-point probe method. The relationship between the resistivity and Ra was explained in terms of the surface roughness. The minimum error value between the experimental and theoretical resistivities was 4.23% when the Ra was in a range of 10×10μm according to AFM measurement. The maximum error value was 14.09% when the Ra was in a range of 40×40μm according to AFM measurement. Thus, the resistivity could be estimated when the Ra was in a narrow range.

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM (80˚ tilted at ×200) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 μm/min was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 ohm·cm at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.

본 연구를 통해 반도체 산업에서 유래된 마이크로웨이브 증폭 에칭기술(MEE)을 이용하여, 마이카의 표면 구조를 변화시키고 오일 흡유량을 조절할 수 있었다. 마이크로웨이브 에너지가 마이카에 조사되면, 마이카 표면이 몇 분 이내에 에칭이 된다. 에칭의 결과로 마이카의 오일 흡유량이 증가되고, 마이카 SiO2층의 표면 변화에 의해 백색도가 증가한다. 추가적으로, 땀을 흡수한 이후에도 높은 백색도가 유지된다. 마이카의 표면구조의 변화는 불산에 슬러리화된 마이카에 마이크로웨이브 조사를 통해서 이루어졌다. 에칭의 정도는 산의 농도, 조사 시간, 조사 에너지의 양, 슬러리의 농도에 의해 조절되었다. 에칭된 마이카의 표면 구조는 ‘달' 표면 모양과 유사하게 보인다. 표면적과 거칠기 등의 특성은 Brunauer-Emmett-Teller (BET), atomic force microscopy (AFM), scanning electron microscopy (SEM), Spectrophotometer, goniophometer로 측정되었다.