The effect of oxygen pressure on the synthesis of ZnO nanowires by means of melt-oxidation of an Al-Zn mixture was investigated. The samples were prepared in oxygen ambient for 1 h at 1,000˚C under oxygen pressure ranging from 0.5 to 100 Torr. ZnO nanowires were formed at oxygen pressures lower than 10 Torr. As the oxygen pressure increased from 0.5 to 10 Torr, the width of the nanowires increased, but their length decreased. The ZnO nanowires had a needle shape, which became gradually thinner toward the tip. X-ray diffraction patterns showed that the nanowires had a hexagonal wurtzite structure. However, ZnO nanowires were not observed when the oxygen pressure increased from 10 Torr to 100 Torr. In roomtemperature cathodeluminescence spectra of the ZnO nanowires, the intensity of ultra-violet emission at 380 nm increased with decreasing oxygen pressure, which indicated that the lower the oxygen pressure, the better the crystallinity of the ZnO nanowires.

A non-volatile resistive random access memory (RRAM) device with a Cr-doped SrZrO3/SrRuO3 bottom electrode heterostructure was fabricated on SrTiO3 substrates using pulsed laser deposition. During the deposition process, the substrate temperature was 650˚C and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped SrZrO3 film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped SrZrO3 film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped SrZrO3. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped SrZrO3 perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of 100-200 Ω and a typical OFF state resistance of 1-2 kΩ, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

WC-TiC-TaC binderless cemented carbide was oxidized under low partial pressure of oxygen (50ppm) at 873K for 1 to 20 h. Surface roughness was measured using atomic force microscope, and effect of TiC amount on oxidation behavior of the carbide was investigated. WC phase was oxidized more easily than WC-TiC-TaC solid solution phase. With an increase in TiC amount, WC-TiC-TaC phase increased and the oxidation resistance of the carbide increased.

기판온도 320˚C에서 알루미나 기판 위에 형성한 NTC 써미스터용 Mn-Ni계 산화물 박막의 산소가스 농도 변화와 막 형성 후 열처리에 따른 미세구조, 결정상 비저항, B정수 변화에 관하여 연구하였다. 미세구조는 주상 구조(columnar structure)를 지녔으며 열처리 온도가 증가함에 따라 700˚C 부근에서 등축 결정립 (equiaxed grain) 형태의 미세구조로 바뀌기 시작하였다. 박막의 결정상은 대부분 입방 스피넬 (cubic spinel) 상과 입방 Mn2O3, 상이 공존하였으며 산소농도 0.16%~0.7%의 경우 800˚C에서 열처리하였을 때 입방 스피넬 상만이 존재하였다. 분위기 산소의 농도가 증가함에 따라 비저항과 B정수도 급격하게 감소하다가 다소 증가하였으며, 600˚C-700˚C 로 열처리할 경우 이 값들이 대체로 낮고 안정된 특성을 보였다.

This study was conducted to evaluate the effects of pressure and dissolved oxygen concentration on the activated sludge and to determine the optimum depth of deep shaft process. Some results from this study were summarized as follows. 1. It is considered that low sludge product in the activated sludge system maintaining high dissolved oxygen concentration is attributed to the increase of endogeneous respiration rate caused by the increase of aerobic zone in the sludge floc. 2. The increase of dissolved oxygen concentration does not affect to the increase of organic removal efficiency greatly and therefore the limiting factor is the substrate transfer into the inner part of floc. 3. The yield coefficient, Y is decreased in proportion to the increase of oxygen concentration. In this study, Y values arre ranged from 0.70 to 0.41 according to the variation of dissolved oxygen concentration from 18.0㎎/ℓ to 258 ㎎/ℓ. 4. The optimum depth of deep shaft process should be determined within the limits of non-toxicity to the microorganism and it is about 100m in this study.