In the new media environment, the two different media types, game and film, fused to each other to create a qualitative change to form a new media type. In recent years, there has been an increasing trend in the background of the convergence of virtual technology and media. Therefore, movies based on the game were produced. In this heat, it is necessary to analyze the gains and losses of the reorganization in a cool way, to review the current state of filming of the game, and to examine the new convergence of games and films in the rapid environment of new media technology. In addition, it is necessary to consider the problems presented in the fusion process of the two mediators and how to develop them in the future.

정공 수송 층 (HTL)은 PSC의 효율 및 안정성을 증가시키기 위해 페로브스카이트 태양 전지 (PSC)에서 중요한 역할을 한다. 본 연구에서, 우리는 PSCs에서 HTL 스핀 코팅 및 블레이드 코팅 방법으로 니켈 산화물 구리 산화물 (NiO-CuO) 나노 입자 (NPs) 박막을 준비하였다. 스핀 코팅 및 블레이드 코팅 된 NiO-CuO 필름의 필름 특성은 원자력 현미경 (AFM)을 사용하여 조사하었고, 장치 성능에 대한 효과는 J-V 특성, 양자 효율 및 광 강도의 Voc 의존성을 사용하여 조사하었다. 결과적으로, 스핀 코팅으로 15.28 % 효율, 블레이드 코팅으로 11.18 % 효율을 달성하였다.

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO2) have led to the expectation that HfO2 could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO2 thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO2-based MFM capacitors by applying various ferroelectric switching characteristics models.

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90% due to the increase of Ncarr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H2 molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

The gas response characteristic toward C2H5OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 oC. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.

이 글은 조선 후기 성리학적 유교 전통의 귀신관과 괴기담 소설과의 연관성을 통해, 한국 괴물 서사의 형성 기반에 대해 알아보았다. 이를 바탕으로 한국 영화 속 괴물 서사와 전통적 귀신관과의 영향 관계 분석을 통해, 2000년 이후 괴물 서사의 변모 양상을 살펴 보고 있다. 조선 후기 성리학자들의 귀신관은 귀신을 ‘초월적이고 신이한 존재’로 파악하기보다는, 조상신에 대한 제사 의례의 하나로 ‘귀’와의 교감 행위를 통해 현실에서의 도덕의식을 강화하려 했다. 현실에서의 도덕 윤리를 강조했던 성리학적 귀신관은 이후 귀신 설화나 괴기담 소설에 지대한 영향을 끼친다. 조선 후기 대표적 괴기담 소설이라 할 수 있는 <장화홍련전>과 아랑형 전설은 ‘여귀의 복수담과 해원’을 주된 서사 구조로 한다. 그들은 가부장제의 과잉 억압에 의해 원귀가 되었지만, 해원 과정에서 현세의 유교적인 봉건 질서를 추수하는 특징을 보인다. 이는 당시 귀신관에 내재된 성리학적 유교 윤리가 적용된 결과다. 1960년대 이후 본격적으로 제작되기 시작한 한국 공포영화 속 괴물 서사는 조선 후기 <장화홍련전>이나 아랑형 전설과 같은 원귀 설화의 전통과 그 맥락을 같이한다. 그러나 유교적 가부장제에 기반한 여귀의 복수담과 해원이라는 한국 괴물 서사 구조는 사회가 급변함에 따라 변화하기 시작한다. 과거 영화 속 괴물이 가부장제의 억압에 의해 귀환한 타자였다면, IMF 이후 괴물 서사는 오히려 가부장제의 질서를 위반하거나, 교란 혹은 와해시키는 존재로 출몰한다. 2000년 이후 괴물 서사의 이러한 변화는 오랜 기간 전통적 가치관으로 자리 잡아온 가부장제의 질서가 흔들리고 있음을 보여주는 것이며, 영화 속 괴물 서사가 당대의 사회문화적 맥락과 함께 변화하고 있음을 반증하는 것이다.

In this work, we study physical and mechanical properties of oxide films formed on AZ91D magnesium alloy by plasma anodization at different temperatures. It is found that the higher the electrolyte temperature, the lower is the breakdown voltage of oxide layer. This is probably because films formed at higher temperatures are thinner and denser. Moreover, electrolyte temperature plays an important role in the physical properties of the films. As the electrolyte temperature increases from 20 to 50℃, the hardness of the oxide layer increases. Friction test against steel balls indicates that wear scars become narrower for films formed at higher temperatures because the films are harder, as indicated by the Vickers hardness. The thinner and denser nature of the oxide film formed at 50°C is also advantageous for heat transfer when film is used as a heat sink. Laser flash test results show very fast heat transfer for AZ91D with plasma anodized oxide layer formed at higher temperatures.

In order to observe the microstructure and morphology of porous titanium -oxide thin film, deposition is performed under a higher Ar gas pressure than is used in the general titanium thin film production method. Black titanium thin film is deposited on stainless steel wire and Cu thin plate at a pressure of about 12 Pa, but lustrous thin film is deposited at lower pressure. The black titanium thin film has a larger apparent thickness than that of the glossy thin film. As a result of scanning electron microscope observation, it is seen that the black thin film has an extremely porous structure and consists of a separated column with periodic step differences on the sides. In this configuration, due to the shadowing effect, the nuclei formed on the substrate periodically grow to form a step. The surface area of the black thin film on the Cu thin plate changes with the bias potential. It has been found that the bias of the small negative is effective in increasing the surface area of the black titanium thin film. These results suggest that porous titanium-oxide thin film can be fabricated by applying the appropriate oxidation process to black titanium thin film composed of separated columns.

In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qualities of AlN films. The full width at half maximum (FWHM) values of (1015) X-ray rocking curves (XRCs) change from 0.22 to 0.31° with changing of the Al/N ratios, but the curves of (0002) XRCs change from 0.04 to 0.45° with changing of the Al/N ratios. This means that structural deformation due to dislocations is slightly affected by the Al/N ratio in the (1015) XRCs but affected strongly for the (0002) XRCs. From the viewpoint of growth rate, the AlN films with high growth rate (HGR) show better crystal quality than the low growth rate (LGR) films overall, as shown by the FWHM values of the (0002) and (1015) XRCs. Based on cross-sectional transmission electron microscope observation, the HGR sample with an Al/N ratio of 3.1 shows more edge dislocations than there are screw and mixed dislocations in the LGR sample with Al/N ratio of 3.5.

Boron-doped amorphous carbon (BDAC) thin films with a regular oxygen reduction reaction (ORR) catalytic activity were synthesized in a hot filament chemical vapor deposition device using a mixture of CH4 and H2 as a gas source and B2O3 as a boron source and then oxidized in air at 380–470 °C for 15–75 min. Scanning electron microscope, transmission electron microscope, Raman spectroscopy, X-ray photoelectron spectroscopy, and electrochemical tests were used to characterize the physical and electrochemical properties of the BDAC catalysts. It was concluded that the BDAC catalyst oxidized at 450 °C for 45 min showed the best ORR catalytic activity in alkaline medium. The oxygen reduction potential and the transfer electron number n, respectively, are − 0.286 V versus Ag/AgCl and 3.24 from the rotating disk electrode experiments. The treated carbon film has better methanol resistance and stability than the commercial Pt/C catalyst.

Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of 150~550 oC with alkyl/amine or chloride precursors. Due to the low reactivity with NH3 reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.

In the historical flow of the Second Revolution of China, the reform and opening, Chinese films have achieved rapidly developing revolution and expansion. These revolutions and expansions are expressed mainly in four respects. That is, the ecological environment of film, the change from closed to open film production mechanism (change), the film management mechanism, from single to pluralization (change), to market from film marketing market (change), from domestic to overseas (change). It is through this transformation and expansion that China has already developed to a movie superpower. But in order for China to become a true film powerhouse, there are still many problems to solve. If these problems are not solved in a timely manner, the dream of a "movie powerhouse" may not be realized quickly. At present, in each field of China, all kinds of projects for full and intensified reform are ongoing, and the formation of a new structure of external openness is accelerating in all directions. Under these circumstances and in the context of the society, Chinese film will be able to make quicker and better development in each field only when they spur to construction of movie power country by continuously strengthening its core competitiveness with continuous realizing and executing the "Film Industry Promotion Act" and reform and opening policies, while adapting to the new changes in the new era and also they can smoothly complete conversion and development from a movie power country to a great film power.

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and O2 mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and roomtemperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when O2 is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ± 3 V of the reverse and forward bias voltage is about 5.8 × 103, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

In the present study, vanadium oxide(V2O5) films for electrochromic(EC) application are fabricated using sol-gel spin coating method. In order to optimize the EC performance of the V2O5 films, we adjust the amounts of polyvinylpyrrolidone(PVP) added to the solution at 0, 5, 10, and 15 wt%. Due to the effect of added PVP on the V2O5 films, the obtained films show increases of film thickness and crystallinity. Compared to other samples, optimum weight percent(10 wt%) of PVP led to superior EC performance with transmittance modulation(45.43 %), responding speeds(6.0 s at colored state and 6.2 s at bleached state), and coloration efficiency(29.8 cm2/C). This performance improvement can be mainly attributed to the enhanced electrical conductivity and electrochemical activity due to the increased crystallinity and thickness of the V2O5 films. Therefore, V2O5 films fabricated with optimized amount of PVP can be a promising EC material for high-performance EC devices.

The passivation of AZ91D Mg alloys through plasma anodization depends on several process parameters, such as power mode and electrolyte composition. In this work, we study the dependence of the thickness, composition, pore formation, surface roughness, and corrosion resistance of formed films on the electrolyte temperature at which anodization is performed. The higher the electrolyte temperature, the lower is the surface roughness, the smaller is the oxide thickness, and the better is the corrosion resistance. More specifically, as the electrolyte temperature increases from 10 to 50 oC, the surface roughness (Ra) decreases from 0.7 to 0.15 μm and the corrosion resistance increases from 3.5 to 9 in terms of rating number in a salt spray test. The temperature increase from 10 to 50 oC also causes an increase in magnesium content in the film from 25 to 63 wt% and a decrease in oxygen from 66 to 21 wt%, indicating dehydration of the film.

Lead free (Ba0.7Ca0.3) TiO3 thick films with nano-sized grains are prepared using an aerosol deposition (AD) method at room temperature. The crystallinity of the AD thick films is enhanced by a post annealing process. Contrary to the sharp phase transition of bulk ceramics that has been reported, AD films show broad phase transition behaviors due to the nanosized grains. The polarization-electric hysteresis loop of annealed AD film shows ferroelectric behaviors. With an increase in annealing temperature, the saturation polarization increases because of an increase in crystallinity. However, the remnant polarization and cohesive field are not affected by the annealing temperature. BCT AD thick films annealed at 700 ℃/2h have an energy density of 1.84 J/cm3 and a charge-discharge efficiency of 69.9%, which is much higher than those of bulk ceramic with the same composition. The higher energy storage properties are likely due to the increase in the breakdown field from a large number of grain boundaries of nano-sized grains.

Tungsten trioxide (WO3) is a promising candidate as a photocatalyst because of its outstanding electrical and optical properties. In this study, we prepare WO3 thin films by electrodeposition and characterize the photocatalytic degradation of methylene blue using these films. Depending on the voltage conditions (static and pulse), compact and porous WO3 films are fabricated on a transparent ITO/glass substrate. The morphology and crystal structure of electrodeposited WO3 thin films are investigated by scanning electron microscopy, atomic force microscopy, and X-ray diffraction. An application of static voltage during electrodeposition yields a compact layer of WO3, whereas a highly porous morphology with nanoflakes is produced by a pulse voltage process. Compared to the compact film, the porous WO3 thin film shows better photocatalytic activities. Furthermore, a much higher reaction rate of degradation of methylene blue can be achieved after post-annealing of WO3 thin films.

Inorganic semiconductor compounds, e.g., CIGS and CZTS, are promising materials for thin film solar cells because of their high light absorption coefficient and stability. Research on thin film solar cells using this compound has made remarkable progress in the last two decades. Vacuum-based processes, e.g., co-evaporation and sputtering, are well established to obtain high-efficiency CIGS and/or CZTS thin film solar cells with over 20% of power conversion. However, because the vacuum-based processes need high cost equipment, they pose technological barriers to producing low-cost and large area photovoltaic cells. Recently, non-vacuum based processes, for example the solution/nanoparticle precursor process, the electrodeposition method, or the polymer-capped precursors process, have been intensively studied to reduce capital expenditure. Lately, over 17% of energy conversion efficiency has been reported by solution precursors methods in CIGS solar cells. This article reviews the status of non-vacuum techniques that are used to fabricate CIGS and CZTS thin films solar cells.

Since the late 19 century, the Choseon dynasty forcibly opened the door to western countries, including Japan. In addition, cultural propagation called ‘modernity’ caused subtle changes in dietary life. Based on the theory of colonial dual society, this study examined the dietary modernity in Kyungsung (mid 1930s~early 1940s) when 50 years had passed since the Open-Door policy. Three films, <Turning point of the youngsters>(1934), <Sweet Dream>(1936) and <Spring of Korean Peninsula>(1941) (those made in 1930s~1940s) were analyzed. Twenty six scenes [14 scenes from <Turning point of the youngsters>, five scenes from <Sweet Dream>, and seven scenes from <Spring of Korean Peninsula>] related to the dietary life from films were chosen and classified according three criteria (degree of modernization, main influential countries, and benefit groups from modernization). The degree of modernization of all films was more than 80%. The average proportion of the countries that affected modernization were western (35%), western-Japan (28%) and Japan (20%). Approximately 33, 53 and 14% of the upper, middle, lower classes, respectively, benefited from diet modernization. The main places where modernized dietary culture could be enjoyed were cafes, western restaurants, tea rooms, and hotels. The main food or beverages that were considered as modernized dietary culture were liquor (especially beer), coffee, and western meals. People in Kyungsung in the mid 1930s~early 1940s experienced modernity in dietary life differently according to the social classes and these culture changes were generally accepted as a symbol of modernity.

중국의 제6세대 감독 중에서 왕차오는 노동자와 사회 주변인의 삶을 다루는 것으로 유명하다. 그의 영화에서 이들의 결말은 비극으로 귀결된다. 프랑스의 영화평론계에서는 그의 세 편의 영화, <안양의 고아>, <낮과 밤>, <럭셔리 카>를 ‘비극 삼부곡’이라 칭한다. 이는 영화에서 나타나는 비극적인 요소뿐만 아니라 인물이나 내용, 주제에서 뚜렷한 유사성과 연속성을 가지고 있다는 전제에서 명명된 것이라고 볼 수 있다. 그렇지만 이 글은 단순하게 영화에 서 나타나는 주인공 혹은 주인공과 관련 있는 인물의 비극적인 삶이나 죽음을 재차 ‘비극적’ 이라고 언급하기 위한 것은 아니다. 오히려 그의 영화는 비록 비극적인 내용을 다루고 있지 만 희망을 염원한다는 것을 밝혀내기 위한 목적이라고 볼 수 있다. 본고에서는 ‘비극 삼부곡’ 에서 나타나는 서사적 은유를 분석하고자 한다. ‘갓난아기’와 ‘강’, ‘江城’ 등의 은유적 장치 분석을 통하여 왕차오 영화에서 나타나는 주제와 특징, 즉 생존과 가족, 윤리와 속죄, 욕망과 귀향 등의 서사를 파악하고자 한다. 이러한 과정을 통하여 그가 세상을 바라보는 시선을 파악할 수 있으리라 판단된다. 종극적으로는 현대 중국에 대한 왕차오 감독의 온기어린 시선을 마주하게 될 것이다.