As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 °C The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

가송이(Tricholoma bakamatsutake Hongo)는 주름버섯목(Agaricales), 송이과(Tricholomataceae)에 속 하는 외생균근성 버섯류의 하나로, 송이(T. matsutake)와 일반적인 외형이 거의 비슷하며, 송이향과 맛이 강하게 나기 때문에 이 두 균종은 쉽게 혼동되며, 실제 분류 및 계통발생학적으로도 가송이와 송이는 유연 관계가 있는 것으로 밝혀졌다. 가송이는 한국, 일본, 대만, 중국의 신갈나무 등과 같은 활엽수림에 분포하는 것으로 알려져 있으며, 최근에는 제주도 구실잣밤나무림에서 발견되었다. 가송이는 균사생장이 매우 느려 연구에 어려움이 많아 균사배양 최적 조건을 구명하고자 본 연구를 실시하였다. 온도에 따른 가송이 균주 별 균사생장 특성을 조사한 결과, 모든 균주에서 25℃에서 가장 균사생장속도가 가장 빨랐으며, 특히 3833 균주가 다른 균주에 비해 약 1.5배 빠른 것으로 조사되었다.

In this review, we examine the latest technological developments in the utilization of truffles, a gourmet ingredient reputed to be one of the "world's three greatest delicacies," considering changing global consumption trends. Global demand for truffles is expected to increase steadily, with an average annual growth rate of 8.9% from 2023 to 2030. As truffles are expensive, the demand for truffles is expected to be concentrated in developed countries such as the United States, European countries, and Japan. In Korea, truffles are utilized in various industries, including food, functional foods, and cosmetics. Korean consumer demand for truffles has consistently remained high since 2019, and truffle products have been performing well in the market. Consequently, there exists substantial potential demand for newly developed truffle-related products and technologies. This review aims to provide objective research information through the systematic analysis of patent applications in Korea and internationally, focusing on technologies involving truffles, and can aid in setting directions for research and development.

Bio-based alternative leathers may be produced from biomass fiber, protein polymers, bacterial cellulose, and mushroom mycelia. Of these components, mushroom mycelia are of greatest interest. In this study, the potential of Fomes fomentariusas a mushroom mycelial mat was confirmed, and the optimal strain for the development of the mycelial mat was determined. Moreover, the quality of the mycelial mat was improved by identifying an efficient culture method to increase productivity. Mutant strains whose independence was verified were obtained by treatment with gamma irradiation under various conditions. Biofilm formation by the resulting strains was examined in sawdust and liquid media and the characteristics of the biofilms were analyzed. The biofilm of the mutant strains showed results that were similar to or better than the biofilms of longevity and cypress mushrooms. These findings are expected to be utilized in future research aimed at discovering new biomaterials using mushroom mycelia.

Eco-friendly materials, such as alternative vegan materials using various fungal resources, are being actively researched to reduce environmental pollution and facilitate a healthy lifestyle. The fungal mycelium-based mushroom mycelium mat is one such emerging material. In this study, the commonly used mushroom mycelium culture method was modified to reduce the time required to produce the mycelium mat, lower the possibility of contamination, and improve the properties and quality of the mat. Shortening the period required for the previously used primary bag culture and secondary mat production culture. A culture method in which the bag culture was omitted was attempted using a mycelium mutated by gamma irradiation to the mycelium of Trametes orientalis. In addition, various nutrients were added to the fungal solution to observe the change in physical properties of the fungal mat. High-quality mycelium mats were produced in the experimental group containing 1.5% CaCO3 in sawdust medium, and the period was also reduced by more than 10 days compared to the existing production method. In the future, for mass producing mycelium mats, additional selection of medium components and optimization of culture conditions are essential.

As the size of market for electric vehicles and energy storage systems grows, the demand for lithium-ion batteries (LIBs) is increasing. Currently, commercial LIBs are fabricated with liquid electrolytes, which have some safety issues such as low chemical stability, which can cause ignition of fire. As a substitute for liquid electrolytes, solid electrolytes are now being extensively studied. However, solid electrolytes have disadvantages of low ionic conductivity and high resistance at interface between electrode and electrolyte. In this study, Li7La3Zr2O12 (LLZO), one of the best ion conducting materials among oxide based solid electrolytes, is fabricated through RF-sputtering and various electrochemical properties are analyzed. Moreover, the electrochemical properties of LLZO are found to significantly improve with co-sputtered Li2O. An all-solid thin film battery is fabricated by introducing a thin film solid electrolyte and an Li4Ti5O12 (LTO) cathode; resulting electrochemical properties are also analyzed. The LLZO/Li2O (60W) sample shows a very good performance in ionic conductivity of 7.3  108 S/cm, with improvement in c-rate and stable cycle performance.

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300oC is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, Vth, and VH of 6.45 cm2/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30cm2/Vs) and large on/off ratio.