We report a simple benchtop method to synthesize diamonds from ethyl alcohol ( C2H6O) at ambient pressure and room temperature via solvothermal reactions in a liquid solution of table salt (NaCl) and their structural characterization using electron diffraction and high-resolution electron microscopy. In addition to the usual cubic phase of diamond, the hexagonal phase of diamond (lonsdaleite) has also been obtained and identified unambiguously. Many of the synthesized diamonds often contain structural defects including twinnings, stacking faults, and dislocations. The formation and growth of diamond under ambient conditions provide further insights into understanding of the natural existence of diamond on Earth as well as in outer space. While only nanometric diamonds have been observed in the present study, we believe this discovery will open up new ways that have long been sought to grow diamonds, including large size diamonds, in organic solutions at ambient conditions.

The ultrahigh pressure process for synthesizing diamond grits is due to make a quantum leap: the raw materials will incorporate diamond seeds with a predetermined pattern. The result is doubling the diamond yield with a narrower size distribution. Moreover, the shape of diamond crystals can be precisely tuned. For example, diamond octahedra or diamond cubes, that are not available today, can be mass-produced. The new technology is now being implemented worldwide so the future diamond grits will have improved quality at reduced prices.

This paper described the preparation method for composing high-grade synthetic diamond by water atomizing using FeNi30 powder catalyst. The objective of this article is about powder making process using super high water atomizing in the atmosphere of inert gas, and then corroded the powder with a corrosion inhibitor. Finally, FeNi30 catalyst powder with lower oxygen content and good sphericity is produced. The experiment of making diamonds by using cubic press and the performance of the diamonds are also discussed.

연소화염법을 이용한 다이아몬드 박막합성은 기판의 표면상태에 크게 의존한다. 특히 탄소결합상이 기판에 조재하는 경우 다이아몬드 핵생성과 성장은 크게 영향을 받는다. 본 연구에서는 일정한 흡입가스비율(R=O2/C2H2)과 기판온도 조건의 연소화염법을 이용하여 몰리브덴 기판위에 다리아몬드박막을 합성하는 과정에서 박막의 핵생성에 미치는 기판 탄소화합물의 영향을 조사하였다. Mb 금속기판표면에 형성된 탄화물로는 Mo2C상과 soot를 택하여 박막합성 전에 Mo기판상에 형성시켰다. Mo 금속기판표면에 형성된 탄화물(Mo2C)상에는 다이아몬드 핵생성과 입자성장이 촉진되어 가장 조대한 양질의 다이아몬드 입자가 형성되었다. 이것은 탄화물상이 반응가스중의 탄소의 확산을 저지함과 동시에 핵생성의 필요한 잠복기간을 감소키켰기 때문이다. 그러나 soot를 구성하는 미세한 탄소결합상들이 다이아몬드 핵생성 장소로 작용하여 결과적으로 다이아몬드 수밀도가 가장 크게 관찰된 반면, 입자성장은 Mo2C기판에 비해 작았다.