ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film’s optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 °C. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

A sintering process for copper based films using a rapid thermal process with infrared lamps is proposed to improve the electrical properties. Compared with films produced by conventional thermal sintering, the microstructure of the copper based films contained fewer internal and interfacial pores and larger grains after the rapid thermal process. This high-density microstructure is due to the high heating rate, which causes the abrupt decomposition of the organic shell at higher temperatures than is the case for the low heating rate; the high heating rate also induces densification of the copper based films. In order to confirm the effect of the rapid thermal process on copper nanoink, copper based films were prepared under varying of conditions such as the sintering temperature, time, and heating rate. As a result, the resistivity of the copper based films showed no significant changes at high temperature (300 oC) according to the sintering conditions. On the other hand, at low temperatures, the resistivity of the copper based films depended on the heating rate of the rapid thermal process.

The electrical property of polymer matrix composites with added carbon powder is studied based on the temperature dependency of the conduction mechanism. The temperature coefficient of the resistance of the polymer matrix composites below the percolation threshold (x) changed from negative to positive at 0.20 < x < 0.21; this trend decreased with increasing of the percolation threshold. The temperature dependence of the electrical property(resistivity) of the polymer matrix composites below the percolation threshold can be explained by using a tunneling conduction model that incorporates the effect of the thermal expansion of the polymer matrix composites into the tunneling gap. The temperature coefficient of the resistance of the polymer matrix composites above the percolation threshold has a positive value; its absolute value increased with increasing volume fraction of carbon powder. By assuming that the electrical conduction through the percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of the carbon power, the temperature dependency of the resistivity above the percolation threshold can be well explained without violating the universal law of conductivity.

ZnO nanorods were successfully fabricated on Zn foil by chemical bath deposition (CBD) method. The ZnO precursor concentration and immersion time affected the surface morphologies, structure, and electrical properties of the ZnO nanorods. As the precursor concentration increased, the diameter of the ZnO nanorods increased from ca. 50 nm to ca. 150 nm. The thicknesses of the ZnO nanorods were from ca. 1.98μm to ca. 2.08μm. ZnO crystalline phases of (100), (002), and (101) planes of hexagonal wurtzite structure were confirmed by XRD measurement. The fabricated ZnO nanorods showed a photoluminescene property at 380 nm. Especially, the ZnO nanorods deposited for 6 h in solution with a concentration of 0.005M showed a stronger (101) peak than they did (100) or (002) peaks. In addition, these ZnO nanorods showed a good electrical property, with the lowest resistance among the four samples, because the nanorods were densely in contact and relatively without pores. Therefore, a ZnO nanorod substrate is useful as a highly sensitive biochip substrate to detect biomolecules using an electrochemical method.

A Li2O-2SiO2 (LS2) glass was investigated as a lithium-ion conducting oxide glass, which is applicable to a fast ionic conductor even at low temperature due to its high mechanical strength and chemical stability. The Li2O-2SiO2 glass is likely to be broken into small pieces when quenched; thus, it is difficult to fabricate a specifically sized sample. The production of properly sized glass samples is necessary for device applications. In this study, we applied spark plasma sintering (SPS) to fabricate LS2 glass samples which have a particular size as well as high transparency. The sintered samples, 15mmφ×2mmT in size, (LS2-s) were produced by SPS between 480˚C and 500˚C at 45MPa for 3~5mim, after which the thermal and dielectric properties of the LS2-s samples were compared with those of quenched glass (LS2-q) samples. Thermal behavior, crystalline structure, and electrical conductivity of both samples were analyzed by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and an impedance/gain-phase analyzer, respectively. The results showed that the LS2-s had an amorphous structure, like the LS2-q sample, and that both samples took on the lithium disilicate structure after the heat treatment at 800˚C. We observed similar dielectric peaks in both of the samples between room temperature and 700˚C. The DC activation energies of the LS2-q and LS2-s samples were 0.48±0.05eV and 0.66±0.04eV, while the AC activation energies were 0.48±0.05eV and 0.68±0.04eV, respectively.

In this paper two aspects of the percolation and conductivity of carbon black-filled polyethylene matrix composites will be discussed. Firstly, the percolation behavior, the critical exponent of conductivity of these composites, are discussed based on studying the whole change of resistivity, the relationship between frequency and relative permittivity or ac conductivity. There are two transitions of resistivity for carbon black filling. Below the first transition, resistivity shows an ohmic behavior and its value is almost the same as that of the matrix. Between the first and second transition, the change in resistivity is very sharp, and a non-ohmic electric field dependence of current has been observed. Secondly, the electrical conduction property of the carbon black-filled polyethylene matrix composites below the percolation threshold is discussed with the hopping conduction model. This study investigates the electrical conduction property of the composites below the percolation threshold based on the frequency dependence of conductivity in the range of 20 Hz to 1 MHz. There are two components for the observed ac loss current. One is independent of frequency that becomes prevalent in low frequencies just below the percolation threshold and under a high electrical field. The other is proportional to the frequency of the applied ac voltage in high frequencies and its origin is not clear. These results support the conclusion that the electrical conduction mechanism below the percolation threshold is tunneling.

Thin films of single-wall carbon nanotubes (SWNT) with various thicknesses were fabricated, and their optical andelectrical properties were investigated. The SWNTs of various thicknesses were directly coated in the arc-discharge chamberduring the synthesis and then thermally and chemically purified. The crystalline quality of the SWNTs was improved by thepurification processes as determined by Raman spectroscopy measurements. The resistance of the film is the lowest for thechemically purified SWNTs. The resistance vs. thickness measurements reveal the percolation thickness of the SWNT film tobe ~50nm. Optical absorption coefficient due to Beer-Lambert is estimated to be 7.1×10-2nm-1. The film thickness for 80%transparency is about 32nm, and the sheet resistance is 242Ω/sq. The authors also confirmed the relation between electricalconductance and optical conductance with very good reliability by measuring the resistance and transparency measurements.

전기전자 및 디스플레이 산업에 다양한 응용이 기대되는 전도성 고분자인 PPP(Polyparaphenylene)는 단순한 구조와 비교적 높은 열적 안정성을 가지고 있으나 전기적 특성은 기존의 물질보다 낮아 그 응용이 더디게 진행되고 있다. 본 연구에서는 전도성 고분자의 전기적 특성을 개선하기 위해 이온주입법을 이용하여 전기전도성을 개선하는 연구를 진행하였다. 5keV에서 30keV 정도의 아주 낮은 에너지를 이용하여 이온을 가속시킴으로서 시편의 특성 열화를 최소화 할 수 있었다. 이온주입법으로 개선된 시편의 전기전도성은 향후 OTFT와 같은 Organic Electronics Device로서의 사용 가능성을 보였으며 이온의 종류와 주입정도에 따라 Thermoelectric power의 크기가 달라지는 반도체 소재로서의 특성을 나타내어 향후 다양한 형태의 소자에 응용될 수 있는 가능성을 확인하였다. 실험으로 확인된 최적의 이온주입에너지는 10keV에서 15keV의 값을 나타내었다.

When was added to Ti-excess ((Ba+Y)/Ti =1), the area occupied by ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value () in system. A donor-doped behavior was observed at various Y contents ( mol% Y) when was added to -excess . As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

Electrical contact property of the W-20wt%Cu contact materials manufactured by liquid phase sintering of nanocomposite W-Cu powders was investigated and discussed in terms of microstructural development during performance test. Nanocomposite powders were prepared by hydrogen reduction of ball milled W-Cu oxide mixture. They underwent complete densification and microstructural homogenization during liquid phase sintering. As a consequence, the W-Cu contacts produced from nanocomposite powders showed superior contact property of lower arc erosion and stable contact resistance. This might be mostly due to the fact that the arc erosion by evaporation of Cu liquid droplets and surface cracking remarkably became weakened. It is concluded that the improvement of anti-arc erosion of the composite specimen is basically attributed to microstructural homogeneity.

최근 디지털 방사선 영상획득을 위한 평판형 X선 검출기에 이용되는 광도전체(a-Se, HgI2, PbO, CdTe, PbI2 등)에 대 한 관심이 증대되고 있다. 본 연구에서는 HgI2 와 a-Se 필름 변환체에 대해 X선에 대한 전기적 신호검출 특성을 조사하였 다. 수백 마이크로의 두꺼운 광도전체 필름 제작을 위해 HgI2는 입자침전방법을 이용하였고, a-Se은 종래의 진공열증착법 을 이용하였다. 제작된 시편에 대한 전기적 특성 실험은 누설전류, 신호응답 특성, 민감도 등을 측정하였다. 실험결과로부 터, HgI2는 상용화된 a-Se에 비해 낮은 동작전압특성과 우수한 신호 발생율을 보임을 알 수 있었다.