To realize high-performance thin film solar cells, we prepared CIGS by the co-evaporation technique on both sodalime and Corning glass substrates. The structural and efficient properties were investigated by varying the thickness of the Mo:Na layer, where the total thickness of the back contact was fixed at 1μm. As a result, when the Mo:Na thickness was 300 nm on soda-lime glass, the measured Na content was 0.28 %, the surface morphology was a plate-like compact structure, and the crystallinity by XRD showed a strong peak of (112) preferential orientation together with relatively intense (220) and (204) peaks as the secondary phases influenced crystal formation. In addition, the substrates on soda-lime glass effected the lowest surface roughness of 2.76 nm and the highest carrier density and short circuit current. Through the optimization of the Mo:Na layer, a solar conversion efficiency of 11.34% was achieved. When using the Corning glass, a rather low conversion efficiency of 9.59% was obtained. To determine the effects of the concentration of sodium and in order to develop a highefficiency solar cells, a very small amount of sodium was added to the soda lime glass substrate.

‘후지’ 사과의 MA 저장성 향상을 위해 저장 온도별로 적합한 비천공 breathable 필름 종류를 구명하고자 본 연구를 수행하였다. 저장중 생체중 감소율은 모든 저장 온도의 비천공 breathable 필름 처리구에서 저장 최종일까지 약 2.0% 이하를 나타냈다. 포장내 대기조성으로 볼 때 1oC에서 1,300cc 필름, 8oC에서 5,000cc 필름, 그리고 20oC에서 10,000cc 필름이 최적 MA 조건에 가장 근접하였다. 저장 중 포장내 에틸렌 농도는 모든 저장온도에서 산소 투과도가 가장 높았던 40,000cc 필름 처리구가 낮게 유지되었다. 저장 최종일의 1oC 1,300cc 필름이 당도, 비타민 C 함량, 그리고 외관 품질이 우수하였 고, 8oC 5,000cc 필름이 당도와 이취 정도가 양호하였으며, 그리고 20oC 10,000cc 필름이 경도와 외관상 품질이 높은 수치를 나타내었다. 이상의 결과로 포장내 대기조성과 과실의 내외적 품질을 비교한 결과 ‘후지’ 사과의 MA 저장시 1oC는 1,300cc 필름, 8oC는 5,000cc 필름, 그리고 20oC에서는 10,000cc 필름이 적합하다고 판단된다.

인지질(L-α-phosphatidylethanolamine, LAPE) 단분자층 LB막의 전기화학적 특성을 통하여 그 안정성을 순환전압전류법으로 조사하였다. LAPE 단분자층 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적특성은 0.5 N, 1.0 N, 1.5 N 및 2.0 N KClO₄ 용액에서 3 전극 시스템으로 순환전압전류법에 의해 측정하였다. 측정범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s로 설정하였다. 그 결과 LAPE LB 막은 순환전압전류곡선으로부터 산화전류로 인한 비가역공정으로 나타났다. LAPE LB막은 전해질농도가 0.01 N, 0.05 N. 0.10 N, 0.15 N 과 0.20 N KClO4 용액에서 확산계수(D)는 각각 195, 15.9, 5.75, 1.38 및 0.754 cm²s-¹×10-9을 얻었다.

The aim of this work was to investigate the effects of electrodeposition conditions on the microstructural characteristics of copper thin films. The microstructure of electroplated Cu films was found to be highly dependent on electrodeposition conditions such as system current and current density, as well as the bath solution itself. The current density significantly changed the preferred orientation of electroplated Cu films in a DC system, while the solution itself had very significant effects on microstructural characteristics in a pulse-reverse pulse current system. In the DC system, polarization at high current above 30 mA, changed the preferred orientation of Cu films from (220) to (111). However, Cu films showed (220) preferred orientation for all ranges of current density in the pulse-reverse pulse current system. The grain size decreased with increasing current density in the DC system while it remained relatively constant in the pulse-reverse pulse current system. The sheet resistance increased with increasing current density in the DC system due to the decreased grain size.

To understand how reactivity between reinforcing nanoparticles and aqueous solution affects electrodeposited Cu thin films, two types of commercialized cerium oxide (ceria, CeO2) nanoparticles were used with copper sulfate electrolyte to form in-situ nanocomposite films. During this process, we observed variation in colors and pH of the electrolyte depending on the manufacturer. Ceria aqueous solution and nickel sulfate (NiSO4) aqueous solutions were also used for comparison. We checked several parameters which could be key factors contributing to the changes, such as the oxidation number of Cu, chemical impurities of ceria nanoparticles, and so on. Oxidation number was checked by salt formation by chemical reaction between CuSO4 solution and sodium hydroxide (NaOH) solution. We observed that the color changed when H2SO4 was added to the CuSO4 solution. The same effect was obtained when H2SO4 was mixed with ceria solution; the color of ceria solution changed from white to yellow. However, the color of NiSO4 solution did not show any significant changes. We did observe slight changes in the pH of the solutions in this study. We did not obtain firm evidence to explain the changes observed in this study, but changes in the color of the electrolyte might be caused by interaction of Cu ion and the by-product of ceria. The mechanical properties of the films were examined by nanoindentation, and reaction between ceria and electrolyte presumably affect the mechanical properties of electrodeposited copper films. We also examined their crystal structures and optical properties by X-ray diffraction (XRD) and UV-Vis spectroscopy.

Tungsten oxide films were prepared by an electrochemical deposition method for use as the anode in rechargeable lithium batteries. Continuous potentiostatic deposition of the film led to numerous cracks of the deposits while pulsed deposition significantly suppressed crack generation and film delamination. In particular, a crack-free dense tungsten oxide film with a thickness of ca. 210 nm was successfully created by pulsed deposition. The thickness of tungsten oxide was linearly proportional to deposition time. Compositional and structural analyses revealed that the as-prepared deposit was amorphous tungsten oxide and the heat treatment transformed it into crystalline triclinic tungsten oxide. Both the as-prepared and heat-treated samples reacted reversibly with lithium as the anode for rechargeable lithium batteries. Typical peaks for the conversion processes of tungsten oxides were observed in cyclic voltammograms, and the reversibility of the heat-treated sample exceeded that of the as-prepared one. Consistently, the cycling stability of the heat-treated sample proved to be much better than that of the as-prepared one in a galvanostatic charge/discharge experiment. These results demonstrate the feasibility of using electrolytic tungsten oxide films as the anode in rechargeable lithium batteries. However, further works are still needed to make a dense film with higher thickness and improved cycling stability for its practical use.

In this study, we present a facile method of fabricating graphene oxide (GO) filmson the surface of polyimide (PI) via layer-by-layer (LBL) assembly of charged GO. The positively charged amino-phenyl functionalized GO (APGO) is alternatively complexed with the nega-tively charged GO through an electrostatic LBL assembly process. Furthermore, we investi-gated the water vapor transmission rate and oxygen transmission rate of the prepared (reduced GO [rGO]/rAPGO)10 deposited PI film(rGO/rAPGO/PI) and pure PI film.The water vapor transmission rate of the GO and APGO-coated PI composite filmwas increased due to the intrinsically hydrophilic property of the charged composite films.However, the oxygen trans-mission rate was decreased from 220 to 78 cm3/m2·day·atm, due to the barrier effect of the graphene filmson the PI surface. Since the proposed method allows for large-scale production of graphene films, it is considered to have potential for utiliation in various applications.

Chalcopyrite CuInSe2(CIS) is considered to be an effective light-absorbing material for thin film photovoltaic solarcells. CIS thin films have been electrodeposited onto Mo coated and ITO glass substrates in potentiostatic mode at roomtemperature. The deposition mechanism of CIS thin films has been studied using the cyclic voltammetry (CV) technique. Acyclic voltammetric study was performed in unitary Cu, In, and Se systems, binary Cu-Se and In-Se systems, and a ternaryCu-In-Se system. The reduction peaks of the ITO substrate were examined in separate Cu2+, In3+, and Se4+ solutions.Electrodeposition experiments were conducted with varying deposition potentials and electrolyte bath conditions. Themorphological and compositional properties of the CIS thin films were examined by field emission scanning electronmicroscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The surface morphology of as-deposited CIS films exhibitsspherical and large-sized clusters. The deposition potential has a significant effect on the film morphology and/or grain size,such that the structure tended to grow according to the increase of the deposition potential. A CIS layer deposited at −0.6Vnearly approached the stoichiometric ratio of CuIn0.8Se1.8. The growth potential plays an important role in controlling thestoichiometry of CIS films.

Cu2ZnSn(Sx,Se1-x)4 (CZTSSe) thin films were prepared by sulfurization of evaporated precursor thin films. Precursor was prepared using evaporation method at room temperature. The sulfurization was carried out in a graphite box with S powder at different temperatures. The temperatures were varied in a four step process from 520˚C to 580˚C. The effects of the sulfurization temperature on the micro-structural, morphological, and compositional properties of the CZTSSe thin films were investigated using X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The XRD and Raman results showed that the sulfurized thin films had a single kesterite crystal CZTSSe. From the FE-SEM and TEM results, the Mo(Sx,Se1-x)2 (MoSSe) interfacial layers of the sulfurized CZTS thin films were observed and their thickness was seen to increase with increasing sulfurization temperature. The microstructures of the CZTSSe thin films were strongly related to the sulfurization temperatures. The voids in the CZTSSe thin films increased with the increasing sulfurization temperature.

To observe the formation of defects at the interface between an oxide semiconductor and SiO2, ZnO was preparedon SiO2 with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on thecharacteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionicinteractions after an annealing process, whereas that of ZnO on SiO2 changed due to the various types of defects which hadformed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defectdeformations at the interface between the ZnO and SiO2, the O 1s electron spectra were convoluted into three sub-peaks bya Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5eV), O2− ions in an oxygen-deficient region (at 531.66eV) and OH bonding (at 532.5eV). In view of the crystallinity from the peak (103) in the XRDpattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum)at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66eV due tothe generation of O2− ions in the oxygen-deficient region formed by thermal activation energy.

We report a highly sensitive NO2 gas sensor based on multi-layer graphene (MLG) films synthesized by a chemical vapor deposition method on a microheater-embedded flexible substrate. The MLG could detect low-concentration NO2 even at sub-ppm (<200 ppb) levels. It also exhibited a high resistance change of ~6% when it was exposed to 1 ppm NO2 gas at room temperature for 1 min. The exceptionally high sensitivity could be attributed to the large number of NO2 molecule adsorption sites on the MLG due to its a large surface area and various defect-sites, and to the high mobility of carriers transferred between the MLG films and the adsorbed gas molecules. Although desorption of the NO2 molecules was slow, it could be enhanced by an additional annealing process using an embedded Au microheater. The outstanding mechanical flexibility of the graphene film ensures the stable sensing response of the device under extreme bending stress. Our large-scale and easily reproducible MLG films can provide a proof-of-concept for future flexible NO2 gas sensor devices.

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type CuAlO2 thin film gas sensors. The CuAlO2 film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type CuAlO2 active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type CuAlO2 layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type CuAlO2 thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of 180˚C. We also found that these CuAlO2 thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor CuAlO2 thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor CuAlO2 thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlledthe uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films,AZO films using ALD was controlled to be three different thicknesses (50nm, 100nm, and 150nm). The structural, chemical,electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy,field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Visspectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased,and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The averagesurface roughnesses of the samples using atomic force microscopy were ~3.01nm, ~2.89nm, and ~2.44nm, respectively. Asthe thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and opticalproperties of AZO thin films. Therefore, the thickest AZO thin films with 150nm exhibited excellent resistivity (~7.00×10−4Ω·cm), high transmittance (~83.2%), and the best FOM (5.71×10−3Ω−1). AZO thin films fabricated using ALD may be usedas a promising cadidate of TCO materials for optoelectronic applications.

Transparent and conducting thin films of Ta-doped SnO2 were fabricated on a glass substrate by a pulse laserdeposition(PLD) method. The structural, optical, and electrical properties of these films were investigated as a function ofdoping level, oxygen partial pressure, substrate temperature, and film thickness. XRD results revealed that all the deposited filmswere polycrystalline and the intensity of the (211) plane of SnO2 decreased with an increase of Ta content. However, theorientation of the films changed from (211) to (110) with an increase in oxygen partial pressure (40 to 100mTorr) and substratetemperature. The crystallinity of the films also increased with the substrate temperature. The electrical resistivity measurementsshowed that the resistivity of the films decreased with an increase in Ta doping, which exhibited the lowest resistivity(ρ~1.1×10−3Ω·cm) for 10wt% Ta-doped SnO2 film, and then increased further. However, the resistivity continuouslydecreased with the oxygen partial pressure and substrate temperature. The optical bandgap of the 10wt% Ta-doped SnO2 filmincreased (3.67 to 3.78eV) with an increase in film thickness from 100-700nm, and the figure of merit revealed an increasingtrend with the film thickness.

ZIF 재료는 독특한 기체 분리 특성을 포함한 물리적, 화학적 특성 때문에 큰 관심을 받아왔다. 본 연구에서는 α-alumina 지지체 위에 결함 없고 연속적인 ZIF-7 막을 형성하는 새롭고 효율적인 방법이 연구되었다. 지지체 위에 시딩 (seeding)을 하지 않고 직접 ZIF-7 박막을 합성하는데 정전분무법이 처음으로 적용되었다. 이 방법은 전구체 용액을 직접 정 전분무함으로 α-alumina 지지체에 ZIF-7 박막을 형성할 수 있었다. ZIF-7 박막은 XRD, FE-SEM, 단일 기체 투과 장치 등을 이용해 분석하였다.

We investigated the nanostructural, chemical and optical properties of nc-Si:H films according to deposition conditions. Plasma enhanced chemical vapor deposition(PECVD) techniques were used to produce nc-Si:H thin films. The hydrogen dilution ratio in the precursors, [SiH4/H2], was fixed at 0.03; the substrate temperature was varied from room temperature to 600˚C. By raising the substrates temperature up to 400˚C, the nanocrystalite size was increased from ~2 to ~7 nm and the Si crystal volume fraction was varied from ~9 to ~45% to reach their maximum values. In high-resolution transmission electron microscopy(HRTEM) images, Si nanocrystallites were observed and the crystallite size appeared to correspond to the crystal size values obtained by X-ray diffraction(XRD) and Raman Spectroscopy. The intensity of high-resolution electron energy loss spectroscopy(EELS) peaks at ~99.9 eV(Si L2,3 edge) was sensitively varied depending on the formation of Si nanocrystallites in the films. With increasing substrate temperatures, from room temperature to 600˚C, the optical band gap of the nc-Si:H films was decreased from 2.4 to 1.9 eV, and the relative fraction of Si-H bonds in the films was increased from 19.9 to 32.9%. The variation in the nanostructural as well as chemical features of the films with substrate temperature appears to be well related to the results of the differential scanning calorimeter measurements, in which heat-absorption started at a substrate temperature of 180˚C and the maximum peak was observed at ~370˚C.

Effects of the amount of nickel powder (Ni) in Ni-carbon fiber (CF) hybrid filler systems on the conductivity(or resistivity) and thermal coefficient of resistance (TCR) of filled high density polyethylene were studied. Increases of the resistivity and TCR with increasing Ni concentration at a given hybrid filler content were observed. Using the fiber contact model, we showed that the main role of Ni in the hybrid filler system is to decrease the interfiber contact resistance when Ni concentration is less than the threshold point. The formation of structural defects leading to reduced reinforcing effect resulted in both a reduction of strength and an increase of the coefficient of thermal expansion in the composite film; these changes are responsible for the increases of both resistivity and TCR with increasing Ni concentration in the hybrid filler system.

In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of BaTiO3 thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of BaTiO3 thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from 700˚C. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/BaTiO3 are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of BaTiO3 thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed BaTiO3 thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.

본 연구에서는 생분해성 고분자인 PLA(polylactic acid)의 기계적 열적 물성 향상을 위해 목재에서 얻은 펄프분말을 블랜딩하여 펄프분말의 함량에 따른 PLA/펄프 복합필름의 기계적, 열적 물성을 확인하였으며, 또한 이 복합필름에 가교제로 TDI(toluene diisocyanate)를 첨가하여 복합필름의 물성 향상을 확인하였다. 그 결과 순수한 PLA 필름의 경우 인장강도가 565.25kgf/cm2인 것을 확인하였으며, 펄프분말의 함량이 0.25 wt% 일 때의 인장강도가 624.20kgf/cm2로 약 9.1 % 증가하는 것을 확인하였다. 반면 연신율의 경우 전 복합필름이 순수 PLA 필름에 비해 약 50% 감소하는 것을 확인하였다. 그리고 가교제로 TDI를 첨가한 PLA/펄프분말의 경우도 TDI의 함량에 관계없이 0.25 wt%의 펄프분말만을 첨가한 복합필름에 비해 연신율이 낮았으며, 인장강도의 경우 500% TDI를 첨가한 경우 640.43kgf/cm2로 증가하였다. 또한, PLA/펄프 복합필름에서 TDI를 가교시킨 PLA/펄프 복합필름은 가교시키지 않은 PLA/펄프 복합필름에 비해 300℃ 이하에서의 열적 안정성은 우레탄기의 형성에 의해 TDI의 함량이 높은 경우 약간 증가하였다.

최근 신선 유통되는 퉁퉁마디는 식물 체내 수분 함량이 높고 조직이 단단하지 못해 저장성이 낮은 식물로 MA 저장을 통해 저장성을 향상시키고, 최근 새롭게 개발된 비천공 breathable(NPB) 필름을 적용하여 각기 5℃와 10℃로 저장하여 실제 유통 수준에서의 영향을 알아 보았다. 또한 신선 편이 제품으로의 유통 가능성을 알아보기 위하여 3cm, 5cm, 그리고 10cm로 각각 절단하여 저장성을 상호 비교하였다. 그 결과 10℃에 비하여 5℃ 저장 조건이 NPB 필름을 적용 하였을 경우 저장력이 우수한 결과를 보였는데 저장중 생체중의 감소율은 5℃에서 25일 저장 종료일까지 2% 이내의 결과를 보였고 10℃에서는 저장 15일 후에 100,000cc NPB 필름을 제외하고 2% 이내의 감소율을 나타내었다. 5℃와 동일 기간인 15일을 기준으로 비교하면 5℃가 1% 이내의 감소율을 나타내 상대적으로 우수한 결과를 보였다. 동일기간 동안 측정한 이산화탄소와 산소 농도의 변화에서는 5,000cc NPB 필름이 MA 저장시의 특징을 보였다. 저장중 포장내 에틸렌 농도는 진공 필름에서 NPB 필름처리들보다 10~100배까지 높았으나, 크기별 차이에 통계적 유의성은 없었다. 각기 5℃에서 25일간 그리고 10℃에서 15일간 저장한 이후 항산화 활성을 측정, 상호 비교한 결과 5℃가 10℃보다 두배 이상의 항산화 활성도를 나타내었고 100,000cc NPB 필름에서 높은 활성도를 보였고 크기별로는 10cm 크기가 활성도가 낮아지지 않는 것으로 나타났다. 저장 종료후 관능검사를 통한 외관품질과 이취를 평가한 결과 5℃ 처리와 5,000cc 필름을 적용한 구에서 상대적으로 높은 수준으로 나타났다. 본 실험을 통하여 5℃, 저장시 5,000cc NPB 필름을 MA 저장에 적용하는 것이 타당하다는 결과를 얻을 수 있었다. 다만 실제 유통 현장에서 사용되는 온도조건이 10℃임을 고려하면 10℃ 저장 시 10cm 크기에는 100,000cc NPB 필름이 단기유통이라는 측면에서 적용이 가능할 것 으로 판단되었다.