Buckwheat (Fagopyrum esculentum), which is a traditional Korean crop, has been known as a health food due to its rich nutrition. This study was conducted to evaluate the change in flavonoid content of flowers and seeds during post-flowering growth of Korean tartary buckwheat variety ‘Hwanggeummiso’, with the aim of providing basic data for the development of functional food and feed additive. Tartary buckwheat took 69 and 99 days from the sowing date to reach the flowering and maturity stages, respectively. As a result of examining the flavonoid components of each part of tartary buckwheat, chlorogenic acid, rutin, and isoquercitrin of flowers increased from the flowering period on 22 May (0 days after flowering) to 42 days after flowering, while quercetin increased until 21 days after flowering and then decreased thereafter. In seeds, chlorogenic acid, rutin, and isoquercitrin were most abundant at the time of seed-bearing on 14 days after flowering, and showed a decreasing tendency thereafter. On the other hand, quercetin showed a tendency to increase until 21 days after flowering and then decrease. Overall, the flavonoid content was higher in flowers than in seeds, with rutin being particularly prominent. Based on this, the possibility as food materials and feed additives was confirmed using buckwheat produced in Korea.

Essential macleod program (EMP) was used to optimize the transmittance of the transparent conducting layers in an oxidemetal- oxide structure. For EMP simulation, the optical coefficient of the material was extracted using an ellipsometer. Following the simulation studies, oxide-metal-oxide samples were fabricated experimentally, and their optical and electrical properties were analyzed. Multilayer SiInZnO/Ag/Siinzno (S/A/S) structures were grown on glass substrates using radio frequency (RF) and direct current (DC) sputtering at room temperature. Due to the occurrence of destructive interference at the metal and oxide interface, the S/A/S structure exhibited excellent optical properties. As the thickness of the top and bottom oxide layers was increased, the transmittance spectrum was red-shifted due to partial wave interference at the Ag interface. Change in thickness of the top oxide layer had a greater effect on the transmittance than that of the bottom oxide layer. This was due to the difference in refractive index occurring at each interface. Change in Ag thickness shifted the absorption edge in the short wavelength region. Whereas electrical properties, such as sheet resistance and carrier concentration, were found to be dependent on thickness of the sandwiched metal layer. An excellent figure of merit of 63.20 ×10−3Ω−1 was obtained when the thickness of the Ag layer was 11 nm, and the top and bottom oxide layer thickness were 45 and 60 nm, respectively. These values suggest promising optoelectronic properties and are encouraging for future transparent electrode applications.

Devices with negative differential transconductance (NDT) and negative differential resistance (NDR) have shown a strong potential for digital electronics with high information density due to their N-shaped current–voltage (I–V) characteristics leading to multiple threshold voltages ( Vths). The 2D materials, such as graphene, hBN, MoS2, WS2, etc., offer an attractive platform to achieve NDT and NDR because of the absence of dangling bonds on the surface, leading to a high-quality interface between the layers. The 2D materials' unique property of the weak van der Waals (vdW) interactions without dangling bonds on the heterostructure devices shows the way for the applications more than-Moore devices. This review holds a well-timed overview of 2D materials-based devices to develop future multi-valued logic (MVL) circuits exhibiting high information density. Notably, the recent advances in emerging 2D materials are reviewed to support the directions for future research on MVL applications.