Fluorine-doped SnO2 (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of 300 oC, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (~14.9Ω/□), high optical transmittance (~88.6 %), the best FOM (~19.9 × 10−3 Ω−1), and excellent thermal stability at an annealing temperature of 300 oC owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a 90o glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at 0o. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

Pt nanopowder-dispersed SiO2 (SOP) films were prepared by RF co-sputtering method using Pt and SiO2 targets in Ar atmosphere. The growth rate and Pt content in the film were controlled by means of manipulating the RF power of Pt target while that of SiO2 was fixed. The roughness of the film was increased with increasing the power of Pt target, which was mainly due to the increment of the size and planar density of Pt nanopowder. It was revealed that SOP film formed at 10, 15, 20 W of Pt power contained 2.3, 2.7, and 3.0 nm of spherical Pt nanopowder, respectively. Electrical conductivity of SOP films was exponentially increased with increasing Pt power as one can expect. Interestingly, conductivity of SOP films from Hall effect measurement was greater than that from DC I-V measurement, which was explained by the significant increase of electron density.

포화지방산과 인지질(DMPC)혼합 LB막에 대한 전기화학적 특성을 조사하였다. 포화지방산과 DMPC 혼합 단분자 LB막은 ITO glass에 Langmuir-Blodgett법을 사용하여 제막하였다. 전기화학적 특 성은 NaClO4 용액에서 3 전극 시스템 (Ag/AgCl 기준전극, 백금선 카운터 전극 및 LB 필름이 코팅된 ITO 작업 전극)으로 순환전압전류법을 사용하여 측정하였다. 그 결과 포화지방산과 인지질(DMPC)의 LB막은 순환전압전류도표로부터 산화전류로 인한 비가역공정으로 나타났다. 포화지방산과 인지질 (DMPC)혼합(몰비 1:1) LB막(C14, C16, C18, C20)에서 확산계수(D)는 0.05 N NaClO4에서 각각 1.2x10-3, 2.1x10-3, 1.4x10-4 및 1.1x10-3 cm2/s로 산출되었다.

ZrO2 films were coated on aluminum etching foil by the sol-gel method to apply ZrO2 as a dielectric material in an aluminum(Al) electrolytic capacitor. ZrO2 films annealed above 450˚C appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The ZrO2 films annealed at 500˚C exhibited a dielectric constant of 33 at 1 kHz. Also, uniform ZrO2 tunnels formed in Al etch-pits 1μm in diameter. However, ZrO2 film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, ZrO2-coated Al etching foils were anodized at 300 V. After being anodized, the Al2O3 film grew in the directions of both the Al-metal matrix and the ZrO2 film, and the ZrO2-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the ZrO2-coated Al foil exhibited only a small increase because the thickness of the Al2O3 film was 4-5 times thicker than that of ZrO2 film.

Ultra-thin liquid films on solid substrates in contact with the saturated vapor are studied by using molecular dynamics simulation. The properties of evaporation and condensation of the films of various adsorptive strengths and thicknesses are obtained during the quasi-steady film evolution. Net condensations occur when the ultra-thin films on the high energy surface come into contact with the saturated vapor phase because the normal film pressure stays lower than the saturated vapor pressure. The net condensation rate is higher for the material combination of higher adsorptive strength. It becomes more so when the film thickness is of a lesser size. On the other hand, that of lower adsorptive strength has lower net condensation rate and depends less on the film thickness. Therefore, the size effect of the condensation phenomenon is more significant for the system of a higher adsorptive strength. This properties come from the state of ultra-thin film, which can be quantified by using disjoining pressure in the quasi-steady processes. These results have implications in practical problems concerning the moving contact line when the precursor film formation is critica

A stoichiometric mixture of evaporating materials for ZnAl2Se4 single-crystal thin films was prepared in a horizontalelectric furnace. These ZnAl2Se4 polycrystals had a defect chalcopyrite structure, and its lattice constants were a0=5.5563Åand c0=10.8897Å.To obtain a single-crystal thin film, mixed ZnAl2Se4 crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were 620oCand 400oC, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ω-2θ scans. The carrier density and mobility of the ZnAl2Se4 single-crystal thin filmwere 8.23×1016cm−3 and 287m2/vs at 293K, respectively. To identify the band gap energy, the optical absorption spectra ofthe ZnAl2Se4 single-crystal thin film was investigated in the temperature region of 10-293K. The temperature dependence ofthe direct optical energy gap is well presented by Varshni's relation: Eg(T)=Eg(0)−(αT2/T+β). The constants of Varshni'sequation had the values of Eg(0)=3.5269eV, α=2.03×10−3eV/K and β=501.9K for the ZnAl2Se4 single-crystal thin film.The crystal field and the spin-orbit splitting energies for the valence band of the ZnAl2Se4 were estimated to be 109.5meVand 124.6meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicatethat splitting of the ∆so definitely exists in the Γ5 states of the valence band of the ZnAl2Se4/GaAs epilayer. The threephotocurrent peaks observed at 10K are ascribed to the A1-, B1-exciton for n=1 and C21-exciton peaks for n=21.

순환전압전류법에 의한 인지질(sphingomyelin, SP)과 polyamic acid(PAA) 혼합물의 농도(몰비 1:1, 2:1 및 3:1)를 변화시켜 혼합단분자 LB막에 대한 전기화학적 특성을 조사하였다. SP과 PAA 혼합물의 단분자 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 KClO₄ 용액에서 3 전극 시스템으로 측정하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50∼250 mV/s로 설정하였다. 그 결과 SP와 PAA 혼합물의 LB막은 순환전압전류도표로부터 환원전류로 인한 비가역공정으로 나타났다. 혼합물 LB막의 혼합(SP:PAA) 몰비가 1:1, 2:1 및 3:1에서 확산계수(D)는 각각 2.670×10-5, 3.562×10-5 및 1.005×10-5 cm²s-¹을 얻었다.

Silk fibroin can be damaged or degraded during degumming process. Therefore, it is expected that different structure and properties of silk fibroin can be obtained by different degumming method. However, effect of degumming method on the structure and properties of regenerated silk has not been considered, yet. In this study, Effect of degumming method on the structure and properties of solution, film, and electrospun fiber of regenerated silk was examined. Order of viscosity of regenerated silk solution as follows : Urea method > Acid method, HTHP method > Soap/soda method, Soda method. This viscosity difference among the degumming method strongly influenced the electro-spinning performance of regenerated silk perpared from different degumming method. Also, solution turbidity, crystallinity index (from FTIR), mechanical properties of silk were remarkably affected by degumming method.

In this study, silk sericin solutions and films were prepared with different solvents: formic acid and water. Also, silk sericin film from aqueous solution was prepared at different casting temperature. Regardless of solvent type, silk sericin solutions showed a shear thinning implying highly molecular entangled state of silk sericin. Silk sericin aqueous solution showed a higher turbidity than that of formic acid solution. Silk sericin aqueous solution showed shorter gelation time than formic acid. FTIR results showed β-sheet crystallization of silk sericin was affected by casting solvent and temperature. Silk sericin film from aqueous solution showed more β-sheet conformation as the casting temperature was decreased. Silk sericin film from formic acid showed higher crystallinity index than silk sericin films cast from aqueous solution. XRD diffraction measurement showed similar results to those of FTIR. In case of mechanical properties, tensile strength of sericin film from formic acid was higher than sericin films from aqueous solution.

In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of BaTiO3 thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of BaTiO3 thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from 700˚C. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/BaTiO3 are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of BaTiO3 thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed BaTiO3 thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.

본 연구에서는 아세틸화된 메틸 셀룰로스를 복합박막 정삼투막의 지지층으로 사용하였다. 계면중합법을 이용하여 선택성이 우수한 폴리아미드 활성층을 다양한 지지층 위에 코팅하였다. 아세틸화된 메틸 셀룰로스 지지층 위에 코팅된 복합 박막 정삼투막의 구조와 성능을 다른 지지층 위에 코팅된 복합박막 정삼투막과 비교하였다. 실험적 결과는 아세틸화된 메틸 셀룰로스 지지층 위에 코팅된 복합박막 정삼투막의 성능이 다른 정삼투막들에 비해서 우수하였으며 이것은 구조적인 특성과 염의 낮은 역확산속도 때문인 것으로 사료된다.

Vanadium dioxide (VO2) is an attractive material for smart window applications where the transmittance of light can be automatically modulated from a transparent state to an opaque state at the critical temperature of ~68˚C. Meanwhile, F : SnO2 (F-doped SnO2, FTO) glass is a transparent conductive oxide material that is widely used in solar-energy-related applications because of its excellent optical and electrical properties. Relatively high transmittance and low emissivity have been obtained for FTO-coated glasses. Tunable transmittance corresponding to ambient temperature and low emissivity can be expected from VO2 films deposited onto FTO glasses. In this study, FTO glasses were applied for the deposition of VO2 thin films by pulsed DC magnetron sputtering. VO2 thin films were also deposited on a Pyrex substrate for comparison. To decrease the phase transition temperature of VO2, tungsten-doped VO2 films were also deposited onto FTO glasses. The visible transmittance of VO2/FTO was higher than that of VO2/pyrex due to the increased crystallinity of the VO2 thin film deposited on FTO and decreased interface reflection. Although the solar transmittance modulation of VO2/FTO was lower than that of VO2/pyrex, room temperature solar transmittance of VO2/FTO was lower than that of VO2/pyrex, which is advantageous for reflecting solar heat energy in summer.

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at 200˚C and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

우리는 순환전압전류법에 의한 인지질(sphingomyelin)과 polyamic acid 혼합물의 단분자 LB막에 대한 전기화학적 특성을 조사하였다. Sphingomyelin과 polyamic acid 혼합물의 단분자 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 KClO4 용액에서 3 전극 시스템으로 측정하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s로 설정하였다. 그 결과 sphingomyelin과 polyamic acid 혼합물의 LB막은 순환전압전류도표로부터 환원전류로 인한 비가역공정으로 나타났다. Sphingomyelin과 polyamic acid 혼합물 LB막에서 전해질농도가 0.1N과 0.2N에서 확산계수(D)는 각각 2.67cm2s-1×105과 5.23cm2s-1×106을 얻었다.

우리는 순환전압전류법에 의한 폴리이미드와 인지질혼합 나노LB 필름에 대한 전기화학적 특성을 조사하였다. polyamic acid와 인지질 단분자 LB막은 ITO glass에 Langmuir-Blodgett법을 사용하여 제막하였다. 전기화학적 특성은 KClO4 용액에서 3 전극 시스템 (Ag/AgCl 기준전극, 백금선 카운터 전극 및 LB 필름이 코팅된 ITO 작업 전극)으로 순환전압전류법을 사용하여 측정하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s였다. 그 결과 polyamic acid와 인지질 혼합물의 LB 필름은 순환전압전류도표로부터 환원전류로 인한 비가역공정으로 나타났다. Polyamic acid와 인지질혼합 LB막에서 확산계수(D)효과는 LAPC를 사용한 경우가 LLPC를 사용한 것 보다 확산계수 값이 적었다.

Thin film electrode consisting purely of porous anodic tin oxide with well-defined nano-channeled structure was fabricated for the first time and its electrochemical properties were investigated for application to an anode in a rechargeable lithium battery. To prepare the thin film electrode, first, a bi-layer of porous anodic tin oxides with well-defined nano-channels and discrete nano-channels with lots of lateral micro-cracks was prepared by pulsed and continuous anodization processes, respectively. Subsequent to the Cu coating on the layer, well-defined nano-channeled tin oxide was mechanically separated from the specimen, leading to an electrode comprised of porous tin oxide and a Cu current collector. The porous tin oxide nearly maintained its initial nano-structured character in spite of there being a series of fabrication steps. The resulting tin oxide film electrode reacted reversibly with lithium as an anode in a rechargeable lithium battery. Moreover, the tin oxide showed far more enhanced cycling stability than that of powders obtained from anodic tin oxides, strongly indicating that this thin film electrode is mechanically more stable against cycling-induced internal stress. In spite of the enhanced cycling stability, however, the reduction in the initial irreversible capacity and additional improvement of cycling stability are still needed to allow for practical use.

15년 정도의 짧은 역사를 가지고 있는 중온 아스팔트 포장은 국내·외적으로 현재 가장 관심대상이 되는 에너지 절약과 환경보호를 추구하는 도로건설분야의 그린기술이다. 본 연구는 이러한 중온 아스팔트의 물성평가를 아스팔트 덩어리 전체 거동으로 고려한 기존 침입도, 점도, 그리고 수퍼페이브에 의한 아스팔트 시험방식으로부터 벗어나 아스팔트 피막두께에 따른 물성평가로 시각을 바꾸어 새로운 프로토콜을 제시하고 결과분석에 따른 새로운 평가기준제안을 하는 것이 목적이다. 이를 위해 기존에 개발한 DSR Moisture Damage의 실험 및 분석의 기본틀을 ARES장비를 통해 각 피막두께별 물성을 측정하고 분석하였다. 분석결과를 통해 200μm와 400μm 사이에 물성의 급격한 변화를 볼 수 있는 한계피막두께가 존재하고 또한 가열아스팔트와 중온아스팔트가 가지고 있는 한계피막두께근처에서 발생하는 물성의 급격한 변화가 서로 다르다는 것을 확인할 수 있었다. 이런 결과를 통해 기존 가열 아스팔트와 성질이 다른 중온 아스팔트를 제대로 평가하기 위해서는 200μm와 400μm 사이 피막두께의 물성평가를 고려해야한다는 것을 제안한다.

Microelectromechanical systems (MEMS)-fabricated suspended devices were used to measure the in-plane electrical conductivity, Seebeck coefficient, and thermal conductivity of 304 nm and 516 nm thick InGaAlAs films with 0.3% ErAs nanoparticle inclusions by volume. The suspended device allows comprehensive thermoelectric property measurements from a single thin film or nanowire sample. Both thin film samples have identical material compositions and the sole difference is in the sample thickness. The measured Seebeck coefficient, electrical conductivity, and thermal conductivity were all larger in magnitude for the thicker sample. While the relative change in values was dependent on the temperature, the thermal conductivity demonstrated the largest decrease for the thinner sample in the measurement temperature range of 325 K to 425 K. This could be a result of the increased phonon scattering due to the surface defects and included ErAs nanoparticles. Similar to the results from other material systems, the combination of the measured data resulted in higher values of the thermoelectric figure of merit (ZT) for the thinner sample; this result supports the theory that the reduced dimensionality, such as in twodimensional thin films or one-dimensional nanowires, can enhance the thermoelectric figure of merit compared with bulk threedimensional materials. The results strengthen and provide a possible direction in locating and optimizing thermoelectric materials for energy applications.

The power capacitors used as vehicle inverters must have a small size, high capacitance, high voltage, fast response and wide operating temperature. Our thin film capacitor was fabricated by alumina layers as a dielectric material and a metal electrode instead of a liquid electrolyte in an aluminum electrolytic capacitor. We analyzed the micro structures and the electrical properties of the thin film capacitors fabricated by nano-channel alumina and metal electrodes. The metal electrode was filled into the alumina nano-channel by electroless nickel plating with polyethylene glycol and a palladium catalyst. The spherical metals were formed inside the alumina nano pores. The breakdown voltage and leakage current increased by the chemical reaction of the alumina layer and PdCl2 solution. The thickness of the electroless plated nickel layer was 300 nm. We observed the nano pores in the interface between the alumina layer and the metal electrode. The alumina capacitors with nickel electrodes had a capacitance density of 100 nF/cm2, dielectric loss of 0.01, breakdown voltage of 0.7MV/cm and leakage current of 104μA.