The high temperature deformation behavior of the activated sintered W powder compacts was investigated. The W compact showed the relative density of 94% with the average W grain size of by activated sintering at for 1 hour. Compression tests were carried out in the temperature range of at the strain rate range of /sec - /sec. True stress-strain curve and microstructure exhibited the grain boundary brittleness which was dependent on the compression test temperature. The activated sintered W compact showed that the maximum stress as well as the strain at the maximum stress was abruptly decreased as the test temperature increase from to 1000 and regardless of the strain rate. The discrepancy of the microstructure in the specimen center was obviously observed with the increase of the test temperature. After compression test at the W grain was severely deformed normally against the compression axis. However, after compression test at and the W grain was not deformed, but the microcrack was formed in the W grain boundary. The Ni-rich second phase segregated along the W grain boundary could be partly unstable over and affect the poor mechanical property of the activated sintered W compact.

본 연구에서는 산화텅스텐() 분말을 이용하여 여러 금속 기판에 텅스텐 박막을 코팅하는 방법에 관한 연구를 수행하였다. 본 연구에서 언급되는 W 코팅은 Lee 등이 보고한 W, Cu 산화물을 이용하여 W-Cu 복합분말을 제조하는 것으로부터 아이디어가 출발되었으며, 본 연구의 결과는 기존의 6불화 텅스텐 가스() 를 열 분해하여 증착시키는 화학증착법(CVD: chemical vapor deposition)과 순수 텅스텐 target을 sputtering하여

Nanosized tungsten carbide powders were synthesized by the chemical vapor condensation(CVC) process using the pyrolysis of tungsten hexacarbonyl(). The effect of CVC parameters on the formation and the microstructural change of as-prepared powders were studied by XRD, BET and TEM. The loosely agglomerated nanosized tungsten-carbide() particles having the smooth rounded tetragonal shape could be obtained below in argon and air atmosphere respectively. The grain size of powders was decreased from 53 nm to 28 nm with increasing reaction temperature. The increase of particle size with reaction temperature represented that the condensation of precursor vapor dominated the powder formation in CVC reactor. The powder prepared at was consisted of the pure W and cubic tungsten-carbide (), and their surfaces had irregular shape because the pure W was formed on the powders. The and W powders having the average particles size of about 5 nm were produced in vacuum.

In the present study, the effect of Ni content on densification and grain growth in Ni doped W compacts was investigated by using the dilatometric analysis. The Ni-doped W compacts with various amount of Ni activator from 0.02 to 0.4 wt％ were sintered in hydrogen atmosphere up to 140. As the amount of Ni and heating rates, the Ni-doped W compacts show a greatly different dilatometric behavior during the sintering. The sintered specimen was densified over 98％ of theoretical density by adding only 0.06 wt％ Wi in sub-micron W powder and the appropriate heating rate. It was also observed that the microstructure development strongly depended on the change of the Ni amount. In addition, it was found that the critical content of Ni showing large grain growth in microstructure was below 0.1 wt％.

표면 탄성과 디바이스의 전극재료로 사용되는 Al-%Cu(4000Å)/tungsten nitride 박막을 magnetron sputtering 법으로 제조하고 전기저항을 평가한 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해 질소비(R =N2/(Ar+N2)가 10~40% 정도 필요하다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu 합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 3.6μΩ-cm의 저항을 나타냈는데, 이는 박막내 결정립 성장과 결함의 감소에 기인하였다.

Copper-10 wt. % tungsten alloyed powder was obtained by co-reduction of mixed tungsten-trioxide and copper oxide powders at 973 K for 7.2 Ks. In the alloy obtained by pressure-assisted sintering of this co-reduced powder, ultra fine tungsten particles (about 100nm) were dispersed uniformly in the copper matrix. At room temperature, the hardness of this alloy was Hv151 and the electrical conductivity was 85% IACS. After annealing at 1173 K for 3.6 Ks, the hardness and electrical conductivity were Hv147 and 84% IACS, respectively, and were same as before annealing. It was confirmed that the hardness and electrical conductivity of this alloy were hardly influenced by annealing condition since the microstructure of this alloy is highly stabilized.

In all larger hardmetal workshops furnaces for dewaxing, vacuum sintering or vacuum and overpressure sintering are today's standard. The furnace technology is well established. Equipment specifications such as operating overpressure, determine sintering cost, product quality, safety and reliability of the furnace and ultimately influence the competitiveness of the hard metal procucer in the global market. Essential furnace requirements are an efficient utilization of the furnace, an environmental friendly dewaxing system, high temperature uniformity, metallurgical treatment with process gases, as well as reduced cooling time by means of rapid cooling. Examples of reduced sintering costs are described achieved using a new design of vacuum sintering furnace with an improved rapid cooling device, cooling times are reduced by up to 45%. Additionally, a cost comparison of two different designs of vacuum overpressure sintering furnaces are included.

WNx 는 리소그라피 마스크의 흡수체나 VLSI 기술에서 금속연결의 확산방지재로써 주목을 받고 있다. RF마르네트론 스퍼터링법으로 여러 증착변수에서 제조한 WNx 막을 고찰하였다. SiNx 멤브레인 위에 증착된 박막의 결정구조는 질소아르곤 가스유량비(0-30%), 가스압력(10-43mTorr), RF출력(0150W)및 기판과 타겟사이의 거리 6cm에서 증착한 WNx 박막은 비정질이였으며 다른 조건에서는 표면이 거친 다결정질이었다. 비정질 박막은 rms가 3.1Å으로 아주 매끈하여 X-선 마스크용 흡착제로써 적합할 것으로 기대된다.