In this paper, the structural optimization and experimental validation of lightweight, high stiffness rollers for roll-to-roll(R2R) processing of lithium metal electrodes are presented. Precise dimensional control of electrode thickness below 50㎛ is essential for next-generation high energy density batteries, yet elastic recovery during rolling hinders the achievement of target specifications. To address this challenge, finite element(FE) analysis was employed to determine the optimal rolling gap and roller geometry, and the results were verified through R2R experiments. Simulations indicated that a rolling gap of 153㎛ yielded a final sheet thickness of about 49.6㎛, meeting the design requirement. Experimental results confirmed the validity of the numerical model, with thickness measurements deviating less than ±10% from FE analysis predictions. These findings demonstrate that the proposed roller design not only ensures thickness precision but also improves system efficiency, offering practical guidelines for scalable lithium metal electrode manufacturing.

고분자 분리막의 대표적인 형태 중 하나인 평판형 분리막은 제조가 용이하여 실험실에서 분리막 소재 연구에서부 터 실제 상용 분리막 생산에 이르기까지 널리 활용되는 분리막의 형태이다. 정밀여과 및 한외여과 등에 사용되는 평판형의 다공성 고분자 분리막은 주로 상분리 공정을 통해 제조할 수 있으며, 여기에는 비용매 유도 및 증기 유도 상분리 공정이 활 용된다. 그러나 상분리 공정 특성상 주변 환경과 실험자에 따라 샘플 간 편차가 쉽게 발생하여 재현성의 확보가 어려운 점이 있다. 따라서 개발된 제조기술을 스케일업 및 재현성 확보를 위해 제어된 환경에서 연속식 대면적 제조가 가능한 롤투롤 제 조장치가 필요하며, 본 연구에서는 실험실 스케일의 제조기술을 나이프 및 슬롯다이 롤투롤 공정으로 스케일 업 했을 때 나 타나는 제조 환경 차이에 따른 분리막의 특성 변화를 비교하였다. 최종적으로 연속식 제조공정 인자에 대한 최적화를 통해 대면적 제조 시 분리막의 균일성을 확보하였다.

This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with hightransparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolvedthese problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetronroll-to-roll sputter system utilizing ITO and SiO2 targets of ITO and SiO2. In this experiment, the effect of D.C. power, windingspeed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point ofsheet resistance, transmittance, and chromaticity(b*). The deposition of SiO2 was performed with RF power of 400W, Ar gasof 50sccm and the deposition of ITO, DC power of 600W, Ar gas of 50sccm, O2 gas of 0.2sccm, and winding speed of 0.56m/min. High quality ITO thin films without SiO2 layer had chromaticity of 2.87, sheet resistivity of 400ohm/square, and trans-mittance of 88% and SiO2-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709ohm/square, and transmittanceof more than 90% were obtained. As a result, SiO2 was coated on PET before deposition of ITO, their chromaticity(b*) andtransmittance were better than previous results of ITO films. These results show that coating of SiO2 induced arisingchromaticity(b*) and transmittance. If the thickness of SiO2 is controlled, sheet resistance value of ITO film will be expected tobe better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.

Indium Tin Oxide (ITO) thin films on Polyethylene Terephtalate (PET) substrate were prepared by Roll-to-Roll sputter system with targets of 5 wt% and 10 wt% SnO2 at room temperature. The influence of the chromaticity (b*) and transmittance properties of the ITO Films were investigated. The ITO thin films were deposited as a function of the DC power, rolling speed, and Ar/O2 gas flow ratio, and then characterized by spectrophotometer. Their crystallinity and surface resistance were also analyzed by X-ray diffractometer and 4-point probe. As a result, the chromaticity (b*) and transmittance of the ITO films were broadly dependent on the thickness, which was controlled by the rolling speed. When the ITO films were prepared with the DC power of 300 W and the Ar/O2 gas flow ratio of 30/1 sccm using 10 wt% SnO2 target as a function of the rolling speeds 0.01 through 0.10 m/min, its chromaticity (b*) and transmittance were about -4.01 to 11.28 and 75.76 to 86.60%, respectively. In addition, when the ITO films were deposited with the DC power of 400W and the Ar/O2 gas flow ratio of 30/2 sccm used in 5 wt% SnO2 target, its chromaticity (b*) and transmittance were about -2.98 to 14.22 and 74.29 to 88.52%, respectively.