Single OLED and tandem OLED was manufactured to analyze the electroluminescence characteristics of DC driving, AC driving, and full-wave rectification driving. The threshold voltage of OLED was the highest in DC driving, and the lowest in full-wave rectification driving due to an improvement of current injection characteristics. The luminance at a driving voltage lower than 10.5 V (8,534 cd/m2) of single OLED and 20 V (7,377 cd/m2) of a tandem OLED showed that the full-wave rectification drive is higher than that of DC drive. The luminous efficiency of OLED is higher in full-wave rectification driving than in DC driving at low voltage, but decrease at high voltage. The full-wave rectification power source may obtain higher current density, higher luminance, and higher current efficiency than the AC power source. In addition, it was confirmed that the characteristics of AC driving and full-wave rectification driving can be predicted from DC driving characteristics by comparing the measured values and calculated values of AC driving and full-wave rectification driving emission characteristics. From the above results, it can be seen that OLED lighting with improved electroluminescence characteristics compared to DC driving is possible using full-wave rectification driving and tandem OLED.

This paper proposes a mathematical model that can calculate the luminescence characteristics driven by alternating current (AC) power using the current-voltage-luminance (I-V-L) properties of organic light emitting devices (OLED) driven by direct current power. Fluorescent OLEDs are manufactured to verify the model, and I-V-L characteristics driven by DC and AC are measured. The current efficiency of DC driven OLED can be divided into three sections. Region 1 is a section where the recombination efficiency increases as the carrier reaches the emission layer in proportion to the increase of the DC voltage. Region 2 is a section in which the maximum luminous efficiency is stably maintained. Region 3 is a section where the luminous efficiency decreases due to excess carriers. Therefore, the fitting equation is derived by dividing the current density and luminance of the DC driven OLED into three regions, and the current density and luminance of the AC driven OLED are calculated from the fitting equation. As a result, the measured and calculated values of the AC driving I-V-L characteristics show deviations of 4.7% for current density, 2.9% for luminance, and 1.9% for luminous efficiency.

High voltage impulse (HVI) has been gained attention as an alternative technique that could control the CaCO3 scale problems encountered in water main, pipe, cooling tower and heat exchanger vessels. The aim of this study was to investigate the effect of electric field (E) and contact time (t) of HVI on reduction of Ca2+ concentration at two different temperatures of 25℃ and 60℃. A kinetic model on the effect of E and t was investigated too. As the E and t increased, the Ca2+ concentration decreased more than that of the control (= no HVI). The Ca2+ concentration decreased up to 81% at 15 kV/cm at 60℃, which was nearly 2 times greater than the control. With these experimental data-set of reduction of Ca2+ concentration under different E and t, the kinetic model was developed. The relationship between E and t required to reduce the concentration of Ca2+ by 30% was modeled at each temperature. The empirical model equations were; E0.83· t = 60.3 at 25℃ and E0.08· t = 1.1 at 60℃. These equations state the products of En and t is always constant, which means that the required contact time can be reduced in accordance with the increment of E and vice versa.

본 논문에서는 유연/인쇄 전자 기술을 활용해 고성능의 유기물 반도체 기반 트랜지스터를 개발하고, 이를 통해 인공지능용 반도체 및 폴리모픽 전자회로에 응용하기 위해 공액구조 고분자 반도체 소재의 광파 어닐링 방법에 따른 특성 향상 효과를 연구하였다. 일반적으로 열처리를 위해 가장 많이 활용되는 핫플레이트의 경우 반도체 소자 특성의 균일도 문제와 높은 온도 및 열-용량으로 인한 플라스틱 기판 사용의 제한, 긴 어닐링 시간 등의 문제로 인해 실제 산업에서 활용하는데 어려움이 있다. 이를 해결하기 위해 광파를 활용한 효과적인 유기물 반도체 필름의 열처리 공정을 개발함으로써 Roll-to-Roll 방식의 고속/대면적 인쇄 공정에 적합한 열처리 방법과 반도체 층 전체의 높은 결정화도 유도를 통한 성능 향상과 소자 균일도 개선을 위한 방법을 개발하였다.

High voltage impulse(HVI) has been gained attention as an alternate technique controlling CaCO3 scale formation. Investigation of key operational parameters for HVI is important, however, those had not been reported yet. In this study, the effect of temperature and applied voltage of HVI on Ca2+ concentration was studied. As the applied voltage from 0 to 15kV and the temperature increased from 20 to 60°C, the Ca2+ concentration decreased, indicating that the aqueous Ca2+ precipitated to CaCO3. The Ca2+ concentration decreased up to 81% under the condition of 15kV and 60°C. Rate constant for the precipitation reaction, k was determined under different temper1ature and voltage. The reaction rate constant under the 15kV and 60°C condition was evaluated to 66☓10-3 L/(mmol·hr), which was 5 times greater than the k of the reaction without HVI at same temperature. The increases in k by HVI at higher temperature region(40 to 60°C) was much greater than at lower temperature region(20 to 40°C), which implies temperature is more important parameter than voltage for reducing Ca2+ concentration at high temperature region. These results show that the HVI induction accelerates the precipitation to CaCO3, particularly much faster at higher temperature.

New three emitting compounds, AK-1, AK-2 and AK-3 including diazocine moiety were synthesized through Suzuki-coupling reaction. Physical properties such as optical, electroluminescent properties were investigated. UV-visible spectrum of AK-1, AK-2 and AK-3 in film state showed maximum 392, 393 and 401 nm. PL spectrum of AK-1, AK-2 and AK-3 showed maximum emission wavelength of 472, 473 and 435 nm. Three compounds were used as EML in OLED device: ITO/2-TNATA (60 nm)/NPB (15 nm)/EML (35 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). AK-3 OLED device showed C.I.E value of (0.18, 0.26) and luminance efficiency of 0.51 cd/A at 10 mA/cm2. New derivatives including diazocine moiety were introduced as OLED emitting material and the EL efficiency was increased by the proper combination of core and side group.

본 연구에서는 전도성 고분자인 polystyrene sulfonic acid doped poly~3,4-ethylenedioxythiophene (PEDOT:PSS)을 소스/드레인 전극으로 사용한 펜타센 단분자 유기 반도체 기반의 전계효과 트랜지스터를 제작하고, 금을 소스/드레인 전극으로 하는 기준소자와 전기적 특성을 비교하여 평가하였다. 전기적 특성을 측정한 결과, PEDOT:PSS 박막은 금 박막에 비해 상대적으로 낮은 전도도를 가짐에도 불구하고 PEDOT:PSS 소스/드레인 전극을 갖는 펜타센 유기 트랜지스터는 금을 소스/드레인 전극으로 갖는 기준 소자와 비교할 만한 성능을 보였다. 이는 PEDOT:PSS와 펜타센 사이의 접촉저항이 금과 펜타센 사이의 접촉저항보다 낮아 상대적으로 낮은 전기전도도에 의한 성능 저하를 보상하기 때문으로 추측된다.

본 연구에서는 용액 공정으로 제작된 단분자 기반의 유기 반도체 전계효과 트랜지스터에 적용된 보호막이 유기 트랜지스터의 전기적 안정성에 미치는 영향에 대해여 살펴보았다. Solvay社에서 제공한 용액 공정형 유기 단분자 반도 체를 채널로 사용하여 제작한 유기 트랜지스터는 약 1 cm2/Vs의 상대적으로 높은 이동도를 보였으며, 대략 2.5 ~ 20 k Ωcm 범위의 낮은 접촉저항을 가진 것으로 측정되었다. 무엇보다 중요한 것은, 제작한 유기 트랜지스터에 불소원자가 함유된 Hyflon AD를 보호막으로 적용하였을 때, 보호막을 적용하기 전에 비해 훨씬 더 향상된 전기적 안정성을 보였 다. 이는 불소원자가 함유된 Hyflon AD 고분자막이 대기 중의 수분을 효과적으로 차단하기 때문으로 추측된다.

투명한 교류 분말형 전계발광 소자는 Electroluminescence (EL) 용 ZnS계 형광체와 시아노 에틸 유기바인더의 첨가량을 달리하여 제작하였다. 전면전극 indium thin oxide(ITO) glass 위에 약 3 μm 크기 의 형광체로 발광층을 형성하여 silver nanowire(Ag NW)를 스핀코팅으로 후면전극 형성 후 연구를 진행 하였다. 본 연구에 제작된 소자의 발광휘도와 투과도을 통해 등황색 계열의 약 585 nm의 주파장 스펙트 럼을 확인하였고 형광체의 첨가량이 낮아질수록 발광휘도가 약 80 %로 감소, 투과도는 약 30 % 증가하 는 것을 알 수 있었다.

For rear metallization with Al paste, Al back contacts require good passivation, high reflectance, and a processing temperature window compatible with the front metal. In this paper, the effect of the firing ambient during the metallization process on the formation of Al rear metal was investigated. We chose three different gases as ambient gases during the firing process. Using SEM, we observed the formation of a back surface field in N2, O2, and Air ambients. To determine the effect of the ambient on Voc, the suns-Voc tool was used. In this study, we described the mechanism of burn-out of organic materials in Al paste during the firing process. The oxygen ambient plays an important role in the burn-out process. We calculated the efficiency with obtained the back surface recombination velocities using PC1D simulation. It was found that the presence of oxygen during the firing process influenced the uniform back surface field because the organic materials in the Al paste were efficiently burned out during heating. The optimized temperature with oxygen flow shows an absolute efficiency of 19.1% at PC1D simulation.

스크린 인쇄 방식을 통해 ZnS기반의 AC 분산형 EL 소자를 제작하였다. 유전체층 재료로 BaTiO3를 사용하였다. 소자의 경우는 쉽게 변수를 조정할 수 있는 수동 스크린 인쇄 방식을 사용하여 최적의 조건으로 제작하였다. TiO2는 내산성, 내알칼리성이 좋아 인체에 무해하기 때문에 광촉매제로 많이사용되고 있다. 기판은 투명전극인 ITO glass와 유연한 ITO PET film의 두가지 방식으로 제작하였다. 본연구에서는 형광체층에 TiO2의 첨가량을 변화시킨 EL소자를 SEM과 XRD를 통하여 구조를 분석하고, 발광 스펙트럼을 통하여 분석하였다. 그리고 TiO2의 첨가량이 증가할수록, 발광효율이 증가하는 것을 알 수 있었다.

스크린 인쇄 방식을 통해 Cu,Al 형광체와 BaTiO3를 혼합한 층의 무기 전계 발광소자를 제작하였다. 혼합층의 두깨는 60㎛로 제작하였다. 형광층의 비율이 유전층보다 높아질수록 발광효율은 증가하였으나. 안정성을 떨어졌다. 가장 높은 효율을 보인 비율은 형광층 3: 유전층 1의 비율이었다.

본 연구에서는 가속된 이온이 전기장이 걸려있는 freestanding 단결정 실리콘 나노 박막에 충돌했을 때 발생하는 열-전계 전자 방출 특성을 여러 전계 및 열적 조건 아래 체계적으로 분석하였다. 이온 충돌에 의한 열-전계 전자 방출은 쇼트키 효과 (schottky effect)의 선형영역의 특성에 의해 예측된 바와 같이 전계의 세기가 증가할수록 선형적으로 증가했으며, 이온 충돌에 의해 발생하는 열에너지의 제곱에 비례하는 특성을 보여주었다. 이러한 특성들은 실리콘 나노 박막의 질량 분석기용 이온 검출기로의 사용 가능성을 보여준다.

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick ZnSnOx with a resistivity of 10Ω·cm, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

The alignments of polystyrene particles of 1μm and 5μm sizes in an aqueous colloidal system were observed by varying the electric field strength, the frequency and the water flow. Spherical mono-dispersed polystyrene particles dispersed in pure water were put into a perfusion chamber; an AC electric field was applied to the Au/Cr electrodes with a 4 mm gap on the glass substrate. The mixture of the 1μm and 5μm sized polystyrene particles at 0.5 vol% concentrations for each size was set in the dielectrophoresis conditions of 1 kHz and 150 V/cm. Large particles of 5μm size were aligned to form chains as the result of the dielectrophoresis force interaction. On the contrary, small particles of 1μm size did not form chains because the dielectrophoresis force was not sufficiently large. When the electric field increased to 250 V/cm, small particles were able to form chains. After the chains were formed from both large and small particles, they began to coalescence as time passed. Owing to the electroosmotic flow of water, wave patterns along the perpendicular direction of the applied electric field appeared at the conditions of 200 Hz and 50 V/cm, when the dielectrophoresis force was small. This wave pattern also appeared for small particles at 1 kHz and 150 V/cm conditions due to the flow of solvent when water was forced to circulate.

To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to 89˚C/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at 400˚C under an N2/O2 atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from 400˚C to 600˚C. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under 500˚C, while nanowire structures begin to form on the beads above 600˚C. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of 2.0 V/μm was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

The effects of the field emission property in relation to the surface morphology and adhesion force were investigated. The single-wall-nanotube-based cathode was obtained by use of an in-situ arc discharge synthesis method, a screen-printing method and a spray method. The morphologies of the formed emitter layers were very different. The emission stability and uniformity were dramatically improved by employing an in-situ arc discharge synthesis method. In this study, it was confirmed that the current stability and uniformity of the field emission of the cathode depend on the surface morphology and adhesion force of the emitters. The current stability of the field emission device was also studied through an electrical aging process by varying the current and electric field.