Three new asymmetric light emitting organic compounds were synthesized with diphenylamine or triphenylamine side groups; 10-(3,5-diphenylphenyl)-N,N-diphenylanthracen-9-amine (MADa), 4-(10-(3,5-diphenylphenyl)anthracen-9-yl)-N,N-diphenylaniline (MATa), and 4-(10-(30,50-diphenylbiphenyl-4-yl) anthracen-9-yl)-N,N-diphenylaniline (TATa). MATa and TATa had a PLmax at 463 nm in the blue region, and MADa had a PLmax at 498 nm.
The EL efficiency and color coordinate values (respectively) were 10.3 cd/A and (0.199, 0.152; bluish-green) for the MADa device, 4.67 cd/A and (0.151, 0.177) for the MATa device, and 6.07 cd/A and (0.149, 0.177) for the TATa device.
The TATa device had a high external quantum efficiency (EQE) of 6.19%, and its luminance and power efficiencies and life-time were more than twice those of the MADN device.
시설 토마토 온실에서 다양한 발광 램프가 장착된 트랩을 가지고 온실가루이의 유인 효과에 미치는 영향에 대하여 조사하였다. 설치된 램프의 종류는 청색, 황색 그리고 흰색 발광 램프가 장착된 트랩을 이용하였다. 실험 결과 청색 발광 램프가 설치된 트랩에서 110마리로 가장 많은 온실가루이 성충이 유인되었고 황색램프 트랩과 흰색램프 트랩에서는 각각 71마리와 45마리가 포획 되었다. 이때 청색 발광램프 트랩의 파장대역은 330nm에서 430nm를 나타내었다. 그러나, 황색광과 흰색광 발광램프 트랩에서도 청색광 램프의 파장대역을 가지고는 있었으나 한편으로 온실가루이가 회피하는 파장대역 또한 동시에 포함하고 있었다. 이 결과 이들 두 개의 트랩에서 보다 청색광 발광트랩이 유인 포획률이 높아 시설 토마토 온실에서 온실가루이의 방제와 예찰에 효과적으로 사용될 수 있을 것으로 판단되었다.
LuNbO4:0.2Yb3+,xTm3+ powders were prepared using a solid-state reaction process. The effects of the amount of Tm on up-conversion(UC) and down-conversion(DC) luminescence properties are investigated. X-ray diffraction patterns confirm that Yb3+ and Tm3+ ions are successfully incorporated into Lu sites. Under 980 nm excitation, the UC spectra of the powders predominantly exhibit strong near-infrared emission bands that peak at 805 nm, whereas weak 480 nm emission bands are observed as well. The emission bands are assigned to the 1G4→ 3H6 (480 nm) and 3H4→ 3H6 (805 nm) transitions of the Tm3+ ions via an energy transfer from Yb3+ to Tm3+; two- and three-photon UC processes are responsible for the 805 and 480 nm emissions, respectively. The DC emission spectra exhibit blue emission (1D2→ 3F4) of Tm3+ at 458 nm. The amount of Tm affects the emission intensity with the strongest emissions at x = 0.007 and 0.02 for the UC and DC luminescence, respectively. The results demonstrate that LuNbO4:Yb3+,Tm3+ phosphors are suitable for bio-applications.
New carbazole derivatives including coumarin moiety, 7-(3-Carbazol-9-yl-phenyl)-chromen-2-one (C-PCa), 7-(9-Phenyl-9H-carbazol-3-yl)-chromen-2-one (PCa-C), 7-[9-(3-Carbazol-9-yl-phenyl)-9H-carbazol-3-yl]-chromen-2-one (PDCa-C) were synthesized by Suzuki reaction. In film state, maximum UV-Vis absorption of three synthesized compounds appeared in the range 331 to 345 nm. PL spectrum of C-PCa, PCa-C and PDCa-C showed miximum emission wavelength of 449, 467 and 467 nm, respectively. C-PCa showed white emission of current efficiency of 1.16 cd/A, power efficiency of 0.59 lm/W and C.I.E of (0.26, 0.33). PCa-C showed current efficiency of 1.13 cd/A, power efficiency of 0.62 lm/W and C.I.E of (0.19, 0.27). PDCa-C showed the highest current efficiency of 1.34 cd/A, power efficiency of 0.62 lm/W and C.I.E of (0.18, 0.23).
This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have beendifficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about 3.6 × 108 cm−2 with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa etched region without the MQW total TD density was about 2.5 × 108 cm−2 with a relative ratio of Edge- : Screw- :Mixed TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.
In this study, we fabricated a polymer light emitting diode (PLED) and investigated its electrical and optical characteristics in order to examine the effects of the PFO [poly(9,9-dioctylfluorene-2-7-diyl) end capped with N,N-bis(4-methylphenyl)-4-aniline] concentrations in the emission layer (EML). The PFO polymer was dissolved in toluene ranging from 0.2 to 1.2 wt%, and then spin-coated. To verify the influence of the TPBI [2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]electron transport layer, TPBI small molecules were deposited by thermal evaporation. The current density, luminance, wavelength and current efficiency characteristics of the prepared PLED devices with and without TPBI layer at various PFO concentrations were measured and compared. The luminance and current efficiency of the PLED devices without TPBI layer were increased, from 117 to 553 cd/m2 and from 0.015 to 0.110 cd/A, as the PFO concentration increased from 0.2 to 1.0 wt%. For the PLED devices with TPBI layer, the luminance and current efficiency were 1724 cd/m2 and 0.501 cd/A at 1.0 wt% PFO concentration. The CIE color coordinators of the PLED device with TPBI layer at 1.0 wt% PFO concentration showed a more pure blue color compared with the one without TPBI, and the CIE values varied from (x, y) = (0.21, 0.23) to (x, y) = (0.16, 0.11).
ZnO thin film was grown on a sapphire single crystal substrate by plasma assisted molecular beamepitaxy. In addition to near band edge (NBE) emissions, both blue and green luminescences are also observedtogether. The PL intensity of the blue luminescence (BL) range from 2.7 to 2.9eV increased as the amountof activated oxygen increased, but green luminescence (GL) was weakly observed at about 2.4eV without muchchange in intensity. This result is quite unlike previous studies in which BL and GL were regarded as thetransition between shallow donor levels such as oxygen vacancy and interstitial zinc. Based on the transitionlevel and formation energy of the ZnO intrinsic defects predicted through the first principle calculation, whichemploys density functional approximation (DFA) revised by local density approximation (LDA) and the LDA+Uapproach, the green and blue luminescence are nearly coincident with the transition from the conduction bandto zinc vacancies of V2-Zn and V-Zn, respectively.
Blue-emitting BAM:Eu phosphor powders were formed by post-treatment of precursor powders with hollow or dense morphologies. The morphologies of the precursor powders obtained by spray pyrolysis were controlled by changing the preparation conditions and by changing the type of spray solution. The effects of the morphologies of the precursor powders on the characteristics of the BAM : Eu phosphor powders reacted with AlF3 flux were investigated. Precursor powders with a spherical shape and a hollow morphology produced BAM : Eu phosphor powders with a plate-like morphology, a fine size and a narrow size distribution. On the other hand, precursor powders with a spherical shape and dense morphology produced BAM : Eu phosphor powders with a plate-like morphology and a large size. AlF3 flux improved the photoluminescence intensities of the BAM : Eu phosphor powders. The photoluminescence intensity of the fine-sized BAM : Eu phosphor powders with a plate-like morphology was 90% of the commercial product under vacuum ultraviolet conditions.
A new blue phosphorescent material for organic light emitting diodes (OLEDs), Iridium(III)bis[2-(4-fIuoro-3-benzonitrile)-pyridinato-N,C2'] picolinate (Firpic-CN), was synthesized and studied. We compared characteristics of Firpic-CN and Bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) which has been used for blue dopant materials frequently. The devices structure were indium tin oxide (ITO) (1000 a)/N,N'-diphenyl-N,N'-(2-napthyl)-(1,1'-phenyl)-4,4'-diamine (NPB) (500 a)/4,4'-N,N'-dicarbazole-biphyenyl (CBP) : FIrpic and FIrpic-CN (X wt%)/4,7-diphenyl-1,10-phenanthroline (BPhen) (300 a)/lithum quinolate (Liq) (20 a)/Al (1000 a). 15 wt% FIrpic-CN doped device exhibits a luminance of 1450 cd/m2 at 12.4 V, luminous efficiency of 1.31 cd/A at 3.58mA/cm2, and Commission Internationale d'Eclairage (CIEx,y) coordinates of (0.15, 0.12) at 12 V which shows a very deep blue emission. We also measured lifetime of devices and was presented definite difference between devices of FIrpic and FIrpic-CN. Device with FIrpic-CN as a dopant presented lower longevity due to chemical effect of CN ligand.
Y2SiO5:Ce 형광체를 In2O3, Al2O3 및 SiO2로 코팅한 후 전계 방출 디스플레이에 요구되는 음극선 발광 특성을 조사하였다. Al2O3 코팅으로 Y2SiO(sub)5:Ce 형광체의 발광 효율과 에이징 특성은 감소되었다. 한편 Al2O3코팅으로 형광체의 발광효율은 증가하였으나 발광스펙트럼과 색좌표는 일부 변화하였다. 그러나 Y2SiO5:Ce 청색 형과체의 발광 효율은 SiO2코팅으로 크게 증가하였으며, 또한 SiO2 코팅한 Y2SiO5:Ce 형광체의 에이징 특성은 코팅 전에 비하여 크게 향상되었다.