To improve ferroelectric properties of PZT, many studies have attempted to fabricate dense PZT films. The AD process has an advantage for forming dense ceramic films at room temperature without any additional heat treatment in low vacuum. Thick films coated by AD have a higher dielectric breakdown strength due to their higher density than those coated using conventional methods. To improve the breakdown strength, glass (SiO2-Al2O3-Y2O3, SAY) is mixed with PZT powder at various volume ratios (PZT-xSAY, x = 0, 5, 10 vol%) and coating films are produced on silicon wafers by AD method. Depending on the ratio of PZT to glass, dielectric breakdown strength and energy storage efficiency characteristics change. Mechanical impact in the AD process makes the SAY glass more viscous and fills the film densely. Compared to pure PZT film, PZT-SAY film shows an 87.5% increase in breakdown strength and a 35.3 % increase in energy storage efficiency.

Lead free (Ba0.7Ca0.3) TiO3 thick films with nano-sized grains are prepared using an aerosol deposition (AD) method at room temperature. The crystallinity of the AD thick films is enhanced by a post annealing process. Contrary to the sharp phase transition of bulk ceramics that has been reported, AD films show broad phase transition behaviors due to the nanosized grains. The polarization-electric hysteresis loop of annealed AD film shows ferroelectric behaviors. With an increase in annealing temperature, the saturation polarization increases because of an increase in crystallinity. However, the remnant polarization and cohesive field are not affected by the annealing temperature. BCT AD thick films annealed at 700 ℃/2h have an energy density of 1.84 J/cm3 and a charge-discharge efficiency of 69.9%, which is much higher than those of bulk ceramic with the same composition. The higher energy storage properties are likely due to the increase in the breakdown field from a large number of grain boundaries of nano-sized grains.

Abstract Y2Ti2O7 nanoparticles (0.3 mol%) have been successfully synthesized by the co-precipitation process. The samples, adjusted to pH7 with ammonia solution as catalyst and calcined at 700~900 ℃, exhibit very fine particles with close to spherical shape and average size of 10-30 nm. It was possible to control the size of the synthesized Y2Ti2O7 particles by manipulating the conditions. The Y2Ti2O7 nanoparticles were coated on a glass substrate by a dipping coating process with inorganic binder. The Y2Ti2O7 solution coated on the glass substrate had excellent adhesion of 5B; pencil hardness test results indicated an excellent hardness of 6H. The thickness of the thick film was about 30 μm. Decomposition of MB on the Y2Ti2O7 thin film shows that the photocatalytic properties were excellent.

A thick film of Li7La3Zr2O12 (LLZO) solid-state electrolyte is fabricated using the tape casting process and is compared to a bulk specimen in terms of the density, microstructure, and ion conductivity. The final thickness of LLZO film after sintering is 240 μm which is stacked up with four sheets of LLZO green films including polymeric binders. The relative density of the LLZO film is 83%, which is almost the same as that of the bulk specimen. The ion conductivity of a LLZO thick film is 2.81 × 10−4 S/cm, which is also similar to that of the bulk specimen, 2.54 × 10−4 S/ cm. However, the microstructure shows a large difference in the grain size between the thick film and the bulk specimen. Although the grain boundary area is different between the thick film and the bulk specimen, the fact that both the ion conductivities are very similar means that no secondary phase exists at the grain boundary, which is thought to originate from nonstoichiometry or contamination.

Porous thick film of alumina which is fabricated by freeze tape casting using a camphene-camphor-acrylate vehicle. Alumina slurry is mixed above the melting point of the camphene-camphor solvent. Upon cooling, the camphene- camphor crystallizes from the solution as particle-free dendrites, with the Al2O3 powder and acrylate liquid in the interdendritic spaces. Subsequently, the acrylate liquid is solidified by photopolymerization to offer mechanical properties for handling. The microstructure of the porous alumina film is characterized for systems with different cooling rate around the melting temperature of camphor-camphene. The structure of the dendritic porosity is compared as a function of ratio of camphene-camphor solvent and acrylate content, and Al2O3 powder volume fraction in acrylate in terms of the dendrite arm width.

The effects of an addition of CNT on the sensing properties of nano ZnO:CNT-based gas sensors were studied for H2S gas. The nano ZnO sensing materials were grown by a hydrothermal reaction method. The nano ZnO:CNT was prepared by ball-milling method. The weight range of the CNT addition on the ZnO surface was from 0 to 10%. The nano ZnO:CNT gas sensors were fabricated by a screen-printing method on alumina substrates. The structural and morphological properties of the ZnO:CNT sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns revealed that nano ZnO:CNT powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The size of the ZnO was about 210 nm, as confirmed by SEM images. The sensitivity of the nano ZnO:CNT-based sensors was measured for 5 ppm of H2S gas at room temperature by comparing the resistance in air with that in target gases.

The performance of electric boiler using thick-film heater has been investigated experimentally. Electric boilers are using thick film heater is composed of four to a water chamber. In this study, the water flow rate while changing then umber of heaters and heating performance was evaluated. One water chamber, the average heat release is approximately 6.63kW. And average heat release of four water chamber is about 29.08kW. The energy efficiency of the water chamber 4 was 95.4%. Finally, the average heat release and energy-efficiency of electric boiler is increased with increasing water chamber number.

The effects of a Ni coating on the sensing properties of nano ZnO:Ni based gas sensors were studied for CH4 and CH3CH2CH3 gases. Nano ZnO sensing materials were prepared by the hydrothermal reaction method. The Ni coatings on the nano ZnO surface were deposited by the hydrolysis of zinc chloride with NH4OH. The weight % of Ni coating on the ZnO surface ranged from 0 to 10 %. The nano ZnO:Ni gas sensors were fabricated by a screen printing method on alumina substrates. The structural and morphological properties of the nano ZnO : Ni sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns showed that nano ZnO : Ni powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The particle size of nano ZnO powders was about 250 nm. The sensitivity of nano ZnO:Ni based sensors for 5 ppm CH4 gas and CH3CH2CH3 gas was measured at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity of the ZnO:Ni sensor to CH4 gas and CH3CH2CH3 gas was observed at Ni 4 wt%. The response and recovery times of 4 wt% Ni coated ZnO:Ni gas sensors were 14 s and 15 s, respectively.

Thermoelectric-thick films were fabricated by using a screen printing process of n and p-type bismuth-telluride-based pastes. The screen-printed thick films have approximately 30 in thickness and show rough surfaces yielding an empty gap between an electrode and the thick film. The gap might result in an increase of an electrical resistivity of the fabricated thick-film-type thermoelectric module. In this study, we suggest a conductive metal coating onto the surfaces of the screen-printed paste in order to reduce the contact resistance in the module. As a result, the electrical resistivity of the thermoelectric module having a gold coating layer was significantly reduced up to 30% compared to that of a module without any metal coating. This result indicates that an introduction of conductive metal layers is effective to decrease the contact resistivity of a thick-film-typed thermoelectric module processed by screen printing.

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such assensors and temperature compensation devices. NTC thermistor thick films of Ni1+xMn2-xO4+δ (x=0.05, 0, −0.05) werefabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T)characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between 25oC and 85oCwithout heat treatment. When the film was annealed at 600oC 1h, the resistivity of the film gradually decreased due tocrystallization and grain growth. The resistivity and the activation energy of films annealed at 600oC for 1 h were 5.203, 5.95,and 4.772KΩ·cm and 351, 326, and 299meV for Ni0.95Mn2.05O4+δ, NiMn2O4, and Ni1.05Mn1.95O4+δ, respectively. The annealingprocess induced insulating Mn2O3 in the Ni deficient Ni0.95Mn2.05O4+δ composition resulting in large resistivity and activationenergy. Meanwhile, excess Ni in Ni1.05Mn1.95O4+δ suppressed the abnormal grain growth and changed Mn3+ to Mn4+, givinglower resistivity and activation energy.

Indium doped SnO2 thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the SnO2 were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the SnO2:In by X-ray diffraction showed a (110) dominant SnO2 peak. The size of SnO2 particles ranged from 0.05 to 0.1 μm, and SnO2 particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped SnO2 thick films for gas sensors was about 20 μm, as confirmed by cross sectional SEM image. Sensitivity of the SnO2:In gas sensor to 2000 ppm of CO2 gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to CO2 gas and H2S gas of the indium-doped SnO2 thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped SnO2 gas sensors to CO2 gas were attributed to the increase of oxygen vacancies and surface area in the SnO2:In. The SnO2:In gas sensors showed good selectivity to CO2 gas.

ZnS:Cu,Cl 형광체를 이용하여 ITO/glaas 기판위에 스크린인쇄법으로 적층형과 혼합형 구조로된 2종류의 교류전계 발광소자를 제작한 후 인가전압과 주파수에 따른 광학적, 전기적 특성을 조사, 비교하였다. 적층헝의 경우 발광휘도는 400Hz, 200V 구동전압에서 약 55 cd/m2를 나타내었다. 인가전압의 주파수를 400Hz에서 30Hz로 증가시킬 경우 휘도는 420 cd/m2로 크게 향상되었다. 혼합형의 경우 400Hz의 주파수에서 문턱전압은 45V이었고, 200V, 30KHz 주파수의 동작조건에서 최대휘도는 670 cd/m2 이었다. 휘도-전압 특성 측정결과 적층형구조 보다 혼합형 소자구조에서 발광강도가 약 1.5배 증가하였다. 주파수에 따른 주발광 파장의 변화는 양쪽시료 모두 유사하게 나타났다. 1KHz이하의 저주파에서는 652 nm의 청녹색 발광과장을 나타내었으며 5KHz이상에서는 452 nm과장의 청색발광을 나타내었다.

고온에서 증발된 금속 갈륨 (Ga)을 암모니아 (NH3) 기체와 직접 반응시켜 사파이어 (α-Al2O3) 기판 위에 GaN 후막을 성장하였다. 성장된 GaN는 주로 [0002] 방향으로 성장하였으나 낮은 성장온도에서는 [1011] 방향의 성장이 관찰되었으며 V-형태를 가진 매우 거친 표면을 보였다. 그러나 성장온도가 증가하면 [1010]와 [1011] 방향으로 성장이 관찰되었으며 피라미드면을 가진 육방정 결정이 성장되었다. 성장된 GaN의 두께는 온도가 증가할수록 증가하였으나, 1270˚C의 고온에서는 열분해를 일으켜 두께가 감소하였다. 공급된 NH3의 유량이 증가할수록 GaN의 결정성과 광특성은 향상되었다. X-선 회절기 (X-ray diffraction)와 광루미네센스(photoluminescence) 분석결과로 GaN 후막이 (1010) 면으로 성장되면 황색발광이 증가됨을 관찰할 수 있었다.