Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

나노복합재료는 다기능성과 고성능을 가지는 혁신적인 복합재료이다. 나노 스케일 필러의 혼입함으로써 복합재료의 전기적, 역학 적 및 열적 특성이 크게 향상될 수 있기 때문에 나노 스케일 필러를 이용한 나노복합재료의 특성화에 관한 다양한 연구가 광범위하게 수행되어 왔다. 특히, 탄소계 나노 필러(탄소나노튜브, 카본블랙, 그래핀 나노판 등)를 활용하여 전기/역학적 특성을 향상시킨 나노복 합소재 개발에 관한 연구들이 복합재료 분야에서 큰 관심을 받고있다. 본 논문은 실제 응용에 필수적인 나노복합재료의 전기/역학적 특성을 문헌조사를 통해 고찰하는 것을 목표로 한다. 또한, 나노복합재료의 전기/역학적 특성 예측을 위한 최신 멀티스케일 모델링 연 구들에 대해서 검토하고, 멀티스케일 모델링에 대한 과제와 향후 발전 가능성에 대해서 논의한다.

This research studied the electrical characteristics, IR transmission characteristics, stealth functions, and thermal characteristics of infrared thermal-imaging cameras of copper-sputtered samples. Nylon samples were prepared for each density as a base material for copper-sputtering treatment. Copper-sputtered NFi, NM1, NM2, NM3, NM4, and NM5, showed electrical resistance of 0.8, 445.7, 80.7, 29.7, 0.3, and 2.2 Ω, respectively, all of which are very low values; for the mesh sample, the lower the density, the lower the electrical resistance. Measuring the IR transmittance showed that the infrared transmittance of the copper-sputtered samples was significantly reduced compared to the untreated sample. Compared to the untreated samples, the transmittance went from 92.0–64.1%. When copper sputtered surface was directed to the IR irradiator, the IR transmittance went from 73.5 to 43.8%. As the density of the sample increased, the transmittance tended to decreased. After the infrared thermal imaging, the absolute values of △R, △G, and △B of the copper phase increased from 2 to 167, 98 to 192, and 7 to 118, respectively, and the closer the density of the sample (NM5→NFi), the larger the absolute value. This proves that the dense copper phase-up sample has a stealth effect on the infrared thermal imaging camera. It is believed that the copper-sputtered nylon samples produced in this study have applications in multifunctional uniforms, bio-signal detection sensors, stage costumes, etc.

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300oC is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, Vth, and VH of 6.45 cm2/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

급증하는 전련소비량을 감당하기 위해서 발전소는 필수적인 사회기반시설이며 안정적인 에너지 공급을 위해 발전소 내 구조적/비구조적 요소의 외부하중에 의한 안전성 평가는 반드시 필요하다. 국내에서 발생되는 지진의 상당수는 고주파 영역의 지진으로 보고되고 있으며 국내외 선행연구들에 의해 비구조적 요소가 고주파 지진에 더 많이 피해가 발생할 수 있는 것으로 연구되었다. 발전소 내에 대표적인 비구조적 요수중 하나인 전기 캐비닛의 경우 선행연구들에서 고유진동수가 10Hz 이상의 고주파 영역에 속하는 것으로 나타났으며 이에 따라 고주파 지진에 의한 안전성 평가가 필요할 것으로 판단된다. 본 연구에서는 전기 캐비닛의 고주파 지진에 의한 영향성 평가에 앞서 양문형 전기 캐비닛의 유한요소 모델을 구축하여 모드해석을 수행하였으며 진동대를 이용한 공진탐색실험 결과와 비교하여 모델의 타당성을 검토하였다. 또한 모델의 신뢰성을 높이기 위해 ABAQUS와 ANSYS Platform을 이용하여 모델을 구축하고 모드해석을 수행하였다. 실험에서 얻어진 1차, 2차 3차 전역모드의 주파수와 비교하였을 때 최대 약 5%의 오차가 발생하는 것으로 나타났다. 또한 1차, 2차, 3차 전역모드에 유효질량이 90%이상 참여하는 것으로 나타나 가장 지배적일 것으로 판단되며 모드형상이 유사한 것으로 판단되어 구축된 모델이 양문형 전기 캐비닛의 전체적인 동적 거동을 잘 모사할 수 있을 것으로 판단된다.

Orthorhombic DyMnO3 films are fabricated epitaxially on Nb-1.0 wt%-doped SrTiO3 single crystal substrates using pulsed laser deposition technique. The structure of the deposited DyMnO3 films is studied by X-ray diffraction, and the epitaxial relationship between the film and the substrate is determined. The electrical transport properties reveal the diodelike rectifying behaviors in the all-perovskite oxide junctions over a wide temperature range (100 ~ 340 K). The forward current is exponentially related to the forward bias voltage, and the extracted ideality factors show distinct transport mechanisms in high and low positive regions. The leakage current increases with increasing reverse bias voltage, and the breakdown voltage decreases with decrease temperature, a consequence of tunneling effects because the leakage current at low temperature is larger than that at high temperature. The determined built-in potentials are 0.37 V in the low bias region, and 0.11 V in the high bias region, respectively. The results show the importance of temperature and applied bias in determining the electrical transport characteristics of all-perovskite oxide heterostructures.

Recently, research on cost reduction and efficiency improvement of crystalline silicon(c-Si) photovoltaic(PV) module has been conducted. In order to reduce costs, the thickness of solar cell wafers is becoming thinner. If the thickness of the wafer is reduced, cracking of wafer may occur in high temperature processes during the c-Si PV module manufacturing process. To solve this problem, a low temperature process has been proposed. Conductive paste(CP) is used for low temperature processing; it contains Sn57.6Bi0.4Ag component and can be electrically combined with solar cells and ribbons at a melting point of 150℃. Use of CP in the PV module manufacturing process can minimize cracks of solar cells. When CP is applied to solar cells, the output varies with the amount of CP, and so the optimum amount of CP must be found. In this paper, in order to find the optimal CP application amount, we manufactured several c-Si PV modules with different CP amounts. The amount control of CP is fixed at air pressure (500 kPa) and nozzle diameter 22G(outer diameter 0.72Ø, inner 0.42Ø) of dispenser; only speed is controlled. The c-Si PV module output is measured to analyze the difference according to the amount of CP and analyzed by optical microscope and Alpha-step. As the result, the optimum amount of CP is 0.452 ~ 0.544 g on solar cells.

A lead-free bulk ceramic having a chemical formula Ba0.8Ca0.2(Ti0.8Zr0.1Ce0.1)O3 (further termed as BCTZCO) is synthesized using mixed oxide route. The structural, dielectric, impedance, and conductivity properties, as well as the modulus of the synthesized sample are discussed in the present work. Analysis of X-ray diffraction data obtained at room temperature reveals the existence of some impurity phases. The natural surface morphology shows close packing of grains with few voids. Attempts have been made to study the (a) effect of microstructures containing grains, grain boundaries, and electrodes on impedance and capacitive characteristics, (b) relationship between properties and crystal structure, and (c) nature of the relaxation mechanism of the prepared samples. The relationship between the structure and physical properties is established. The frequency and temperature dependence of the dielectric properties reveal that this complex system has a high dielectric constant and low tangent loss. An analysis of impedance and related parameters illuminates the contributions of grains. The activation energy is determined for only the high temperature region in the temperature dependent AC conductivity graph. Deviation from the Debye behavior is seen in the Nyquist plot at different temperatures. The relaxation mechanism and the electrical transport properties in the sample are investigated with the help of various spectroscopic (i.e., dielectric, modulus, and impedance) techniques. This lead free sample will serve as a base for device engineering.

In recent years, solar cells based on crystalline silicon(c-Si) have accounted for much of the photovoltaic industry. The recent studies have focused on fabricating c-Si solar modules with low cost and improved efficiency. Among many suggested methods, a photovoltaic module with a shingled structure that is connected to a small cut cell in series is a recent strong candidate for low-cost, high efficiency energy harvesting systems. The shingled structure increases the efficiency compared to the module with 6 inch full cells by minimizing optical and electrical losses. In this study, we propoese a new Conductive Paste (CP) to interconnect cells in a shingled module and compare it with the Electrical Conductive Adhesives (ECA) in the conventional module. Since the CP consists of a compound of tin and bismuth, the module is more economical than the module with ECA, which contains silver. Moreover, the melting point of CP is below 150 ℃, so the cells can be integrated with decreased thermal-mechanical stress. The output of the shingled PV module connected by CP is the same as that of the module with ECA. In addition, electroluminescence (EL) analysis indicates that the introduction of CP does not provoke additional cracks. Furthermore, the CP soldering connects cells without increasing ohmic losses. Thus, this study confirms that interconnection with CP can integrate cells with reduced cost in shingled c-Si PV modules.

PURPOSES : The pole electrode method damaged the concrete pavement on inserting the electrode into the pavement surface. This study examined the feasibility of the flat electrode method to observe the concrete pavement instead of the pole electrode method and analyzed the resistivity characteristics of the concrete by performing laboratory tests. METHODS : The resistivity of the concrete specimens manufactured with three different mixing ratios (38.50%, 39.50%, and 40.50%) were measured using the pole and flat electrode methods according to the concrete age (7 and 28 days) and electrode spacing (20 mm, 30 mm, and 40 mm). RESULTS : In both pole and flat electrode methods, the resistivity increased with increasing fine aggregate proportion regardless of the concrete age. The resistivity measured at a concrete age of 28 days was slightly larger than that measured at 7 days. In the case of a concrete age of 7 days, the resistivity measured by the flat electrode method was larger than that measured by the pole electrode method. The difference disappeared at 28 days. CONCLUSIONS: The results suggest that the flat electrode method can replace the pole electrode method because the resistivity measured by both methods was similar. Hence, the development of a technology to apply the flat electrode method to actual concrete pavement is necessary.

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

In this study, bulk nickel-carbon nanotube (CNT) nanocomposites are synthesized by a novel method which includes a combination of ultrasonication, electrical explosion of wire in liquid and spark plasma sintering. The mechanical characteristics of the bulk Ni-CNT composites synthesized with CNT contents of 0.7, 1, 3 and 5 wt.% are investigated. X-ray diffraction, optical microscopy and field emission scanning electron microscopy techniques are used to observe the different phases, morphologies and structures of the composite powders as well as the sintered samples. The obtained results reveal that the as-synthesized composite exhibits substantial enhancement in the microhardness and values more than 140 HV are observed. However an empirical reinforcement limit of 3 wt.% is determined for the CNT content, beyond which, there is no significant improvement in the mechanical properties.

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

To study the characteristics of ZTO, which is made using a target mixed ZnO:SnO2= 1:1, the ZnO and SnO2 were analyzed using PL, XRD patterns, and electrical properties. Resulting characteristics were compared with the electrical characteristics of ZnO, SnO2, and ZTO. The electrical characteristics of ZTO were found to improve with increasing of the annealing temperature due to the high degree of crystal structures at high temperature. The crystal structure of SnO2 was also found to increase with increasing temperatures. So, the structure of ZTO was found to be affected by the annealing temperature and the molecules of SnO2; the optical property of ZTO was similar to that of ZnO. Among the ZTO films, ZTO annealed at the highest temperature showed the highest capacitance and Schottky contact.

Ti alloys are extensively used in high-technology application because of their strength, oxidation resistance at high temperature. However, Ti alloys tend to be classified very difficult to cut material. In this paper, The powder synthesis, spark plasma sintering (SPS), bulk material properties such as electrical conductivity and thermal conductivity are systematically examined on Ti2AlN and Ti2AlC materials having most light-weight and oxidation resistance among the MAX phases. The bulk samples mainly consisted of Ti2AlN and Ti2AlC materials with density close to theoretical value were synthesized by a SPS method. Machining characteristics such as machining time, surface quality are analyzed with measurement of voltage and current waveform according to machining condition of micro-electrical discharge machining with micro-channel shape.

To obtain the transistor with ambipolar transfer characteristics, IGZO/SiOC thin film transistor was prepared on SiOC with various polarities as a gate insulator. The interface between a channel and insulator showed the Ohmic and Schottky contacts in the bias field of -5V ~ +5V. These contact characteristics depended on the polarities of SiOC gate insulators. The transfer characteristics of TFTs were observed the Ohmic contact on SiOC with polarity, but Schottky contact on SiOC with low polarity. The IGZO/SiOC thin film transistor with a Schottky contact in a short range bias electric field exhibited ambipolar transfer characteristics, but that with Ohmic contact in a short range electric field showed unipolar characteristics by the trapping phenomenon due to the trapped ionized defect formation.

A supercritical carbon dioxide (SCC) process of dispersion of multi-walled carbon nano-tubes (MWCNTs) into epoxy resin has been developed to achieve MWCNT/epoxy com-posites (CECs) with improved mechanical, thermal, and electrical properties. The synthesis of CECs has been executed at a MWCNT (phr) concentration ranging from 0.1 to 0.3 into epoxy resin (0.1 mol) at 1800 psi, 90°C, and 1500 rpm over 1 h followed by curing of the MWCNT/epoxy formulations with triethylene tetramine (15 phr). The effect of SCC treat-ment on the qualitative dispersion of MWCNTs at various concentrations into the epoxy has been investigated through spectra analyses and microscopy. The developed SCC assisted process provides a good dispersion of MWCNTs into the epoxy up to a MWCNT concentra-tion of 0.2. The effects of SCC assisted dispersion at various concentrations of MWCNTs on modificationof mechanical, thermal, dynamic mechanical thermal, and tribological proper-ties and the electrical conductivity of CECs have been investigated.

The relationship the between electrical properties and surface roughness (Ra) of a wet-etched silicon wafer were studied. Ra was measured by an alpha-step process and atomic force microscopy (AFM) while varying the measuring range 10×10, 40×40, and 1000×1000μm. The resistivity was measured by assessing the surface resistance using a four-point probe method. The relationship between the resistivity and Ra was explained in terms of the surface roughness. The minimum error value between the experimental and theoretical resistivities was 4.23% when the Ra was in a range of 10×10μm according to AFM measurement. The maximum error value was 14.09% when the Ra was in a range of 40×40μm according to AFM measurement. Thus, the resistivity could be estimated when the Ra was in a narrow range.

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM (80˚ tilted at ×200) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 μm/min was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 ohm·cm at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.